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TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

Single Positive Power Supply (No Negative
Voltage Required)

Advanced Silicon RFMOS

Technology

4.8-V Operation for GSM Applications

35-dBm Typical Output Power

30-dB Typical Power Gain

40% Typical PAE with 5-dBm Input Power

45% Typical PAE with 8-dBm Input Power

Output Power Control

Few External Components Required for
Operation

Thermally Enhanced Surface-Mount
Package for Small Circuit Footprint

Rugged, Sustains 20:1 Load Mismatch

800-MHz to 1000-MHz Wide Operational
Frequency Range

Low Standby Current (< 10

description

The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global
systems for mobile communications (GSM). It uses Texas Instruments RFMOS

process and consists of a

three-stage amplifier with output power control. Few external components are required for operation.

The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section
of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF
output port, RFOUT, require simple external matching networks.

A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious
emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a
change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power
applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of
43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power
applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB.

The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPAD

(PWP) thin-shrink

small-outline package (TSSOP). It is characterized for operation from 40

C to 85

C operating free-air

temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in
pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves
the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a
low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB)
ground plane as a continuation of the regular package terminals that are designated GND.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

1998, Texas Instruments Incorporated

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

VG2
VG3

VPC

VG1

RFIN
RFIN

VG1

VPC

VG3
VG2

VD1/VD2
GND
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
GND
VD1/VD2

PWP PACKAGE

(TOP VIEW)

NC No internal connection

RFMOS and PowerPAD are trademarks of Texas Instruments Incorporated.

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

schematic

VD1/VD2

13, 24

RFIN

15 22

RFOUT/VD3

4 or 9

VG1

1, 12

VG2

2 or 11

VG3

3 or 10

VPC

6, 7

Terminal Functions

TERMINAL

I/O

DESCRIPTION

NAME

NO.

I/O

DESCRIPTION

GND

14, 23

Analog ground for all internal circuits. All signals are referenced to the ground terminals.

5, 8

No internal connection. It is recommended that all NC terminals be connected to ground.

RFIN

6, 7

RF input. RFIN accepts signals between 800 MHz and 1000 MHz.

RFOUT/ VD3

15, 16, 17,
18, 19, 20,

21, 22

I/O

RF output and third

stage drain bias. RFOUT requires an external matching network.

VG1

4, 9

First

stage gate bias set by resistor. Either terminal may be used or both may be connected externally.

VG2

1, 12

Second

stage gate bias set by resistor. These terminals must be connected externally.

VG3

2, 11

Third

stage gate bias set by resistor. Either terminal may be used or both may be connected externally.

VPC

3, 10

Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical
value of 43 dBm to 35 dBm. Either terminal may be used, or both may be connected externally.

VD1/ VD2

13, 24

First

and second

stage drain bias. These terminals must be connected externally.

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage range, V

(see Note 1)

0.6 V to 8 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, VPC

0.6 V to 4 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input power at RFIN

13 dBm

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal resistance, junction to case, R

(see Note 2)

3.5

C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Junction temperature, T

max

150

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

C to 85

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

C to 150

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. Voltage values are with respect to GND.
2. No air flow and with infinite heatsink

TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

recommended operating conditions

PARAMETER

MIN

NOM

MAX

UNIT

Supply voltage VDD (see Note 1 and Note 3)

3.5

4.8

Operating free-air temperature, TA

Operating frequency range (see Note 4)

800

1000

MHz

NOTES:

1. Voltage values are with respect to GND.

3 .Performance varies with drain voltage, see Figure 8.

4. External matching network dependent.

electrical characteristics over full range of recommended operating conditions

supply current, V

= 4.8 V

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IDD Supply current

Operating at maximum output power

VPC = 3 V

IDD Supply current

Operating with no RF input power

VPC = 0 V

< 10

Typical values are at TA = 25

GSM operation, V

= 4.8 V, VPC = 3 V, P

= 5 dBm, T

= 25

C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Operating frequency range

870

925

MHz

Output power

VPC = 3 V

dBm

Output power

VPC = 0 V

dBm

Power added efficiency (PAE)

40%

Power added efficiency (PAE)

PI = 8 dBm

45%

Input return loss (externally matched, small signal)

PI = 20 dBm

Harmonics

2f0

With external matching

dBc

Harmonics

3f0

With external matching

dBc

Noise power in 30

kHz bandwidth

20 MHz above f0

dBm

Noise power in 30

kHz bandwidth

10 MHz above f0

dBm

Ruggedness test

Frequency = 900 MHz,
Load VSWR = 20:1,
All phase angles

Specific applications circuit
§ No degradation in output power after test.

stability, GSM operation

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Stability

Output VSWR¶ < 6:1 all phases, VDD < 6 V, P

= 5 dBm,

35 dBm, Output frequency band: 200 MHz 1200 MHz

No parasitic

oscillations (all

spurious < 70 dBc)

¶ VSWR = voltage standing wave ratio

switching characteristics

GSM operation

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ton

Switching time, RF output OFF to ON

VPC stepped from 0 V to 3 V

toff

Switching time, RF output ON to OFF

VPC stepped from 3 V to 0 V

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

APPLICATION INFORMATION

In all cases, a capacitor must be connected from the positive power supply to ground as close to the terminals as
possible for power-supply bypassing. The dc-blocking capacitors are required on the RF input and RF output. A list
of components and their functions is shown in Table 1.

VG2

VG3

VPC

VG1

RFIN

VG1

VPC

VG3

VG2

VD1/VD2

GND

RFOUT/VD3

GND

VD1/VD2

C10

VD3

RFOUT

RFIN

C12

VPC

TRF7610

C11

245 mil

Figure 1. Typical GSM Cellular Telephone Application

TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

Table 1. External Component Selection

COMPONENT

DESIGNATION

TYPICAL VALUE

FUNCTION

100 pF

DC blocking capacitor

100 pF

Matching capacitor

330

Drain-bias decoupling capacitor

0.033

Drain-bias decoupling capacitor

C5, C6

22 pF

High-Q matching capacitor

0.033

Drain-bias decoupling capacitor

11 pF

High-Q matching capacitor

100 pF

DC blocking capacitor

C10

100 pF

Drain-bias decoupling capacitor

C11

100

Drain-bias decoupling capacitor

C12

100 pF

Decoupling capacitor

2200

Gate-bias setting resistor

R2, R3

5100

Gate-bias setting resistor

3.9

Matching resistor

Vpc termination resistor

2.7 nH

Matching inductor

L 2

18.5 nH high-current inductor

/4 microstrip line

Drain bias inductor

On a FR4 substrate with

r of 4.3, a

/4 50

line is 40 mm.

design philosophy

The TRF7610 is a three-stage integrated power amplifier for use in cellular phone handsets. The device and
applications board are optimized to operate under 900-MHz, 4.8-V GSM conditions. External matching
networks provide design flexibility in centering the frequency response from 800 to 1000 MHz. Typical
performance at 900 MHz, driven by a 5-dBm GSM signal, is 30 dB of power gain, 35 dBm output power, and
40 percent PAE.

Discrete component selection was made to optimize output power, gain, pulse flatness in the GSM pulse
window, and PAE. Where possible, size and cost goals were considered: the smallest, least expensive
components available were included in the applications board design. Some of the components, however, were
chosen for their ability to increase performance. The following sections explain the design options and
compromises to consider when substituting parts of differents types and values.

output matching network

The output matching network provides the majority of the design flexibility. First, the shunt capacitors, C5, C6,
and C8 are American Technical Ceramics high-Q capacitors, which increase performance. The ATC capacitors
achieve a 0.4-dB increase in output power and a 3-percent increase in PAE compared to the performance
achieved using 0402-sized capacitors. However, if size and cost are more important, 0402-sized capacitors can
be used, while sacrificing the performance gains achieved using the high-Q capacitors.

Second, the dc bias network on the amplifier output stage, designed using a Coilcraft 18.5 nH high-current
inductor (L 2), minimizes the board layout area. An alternative to this high-current inductor is a quarter-wave stub
with a bias decoupling capacitor to ground (C10, C3). On the FR4 board with

= 4.3, a quarter-wave stub at

900 MHz is 40 mm in length. One advantage that the quarter-wave stub offers over the inductor is improved
second harmonic suppression. The inductor offers a much smaller footprint; however, it does sacrifice 10 dB

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

of second harmonic suppression. The PAE is only slightly affected: it is reduced by approximately 1 percent
compared to the quarter-wave stub. The system designer must decide if size or performance is of greatest
concern.

The 330

F bias decoupling capacitors, C3 and C11, provide pulse flatness in the GSM application. These

surface mount capacitors provide a gain slope of 0.4 dB over the duration of the GSM duty cycle. If that is not
acceptable, the performance can be improved by adding a larger value capacitor in parallel with the two existing
capacitors. Measured results, using a standard 4700

F electrolytic taken from a cellular phone, is 0.1 dB of

gain slope for the duration of the GSM duty cycle. Capacitor size considerations must be decided by the system
designer.

dc bias network

The dc bias network consists of resistors R1, R2, R3, and R5, which set the gate bias voltage of the device. R1,
R2, and R3 are used as voltage divider resistors which set the gate voltages at approximately 1.7 V. Resistor
R5 is a 51

termination resistor that is needed only for a 50

pulse generator. When a high-impedance pulse

generator is used, the 51

resistor can be omitted as it is not necessary for device function.

TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 2

20

15

10

Power

Added Efficiency %

PI Input Power dBm

POWER ADDED EFFICIENCY

INPUT POWER

Frequency = 900 MHz
VDD = 4.8 V
VPC = 3 V Pulsed

TA = 40

TA = 85

TA = 25

Figure 3

PI = 5 dBm
VDD = 4.8 V
VPC = 3 V Pulsed

TA = 40

TA = 85

TA = 25

850 860 870 880 890 900 910

Power

Added Efficiency %

f Frequency MHz

920 930 940 950

POWER ADDED EFFICIENCY

FREQUENCY

Figure 4

2.5

3.5

4.5

5.5

TA = 40

TA = 85

TA = 25

POWER ADDED EFFICIENCY

DRAIN VOLTAGE

Frequency = 900 MHz
PI = 5 dBm
VPC = 3 V Pulsed

VDD Drain Voltage V

Power

Added Efficiency %

Figure 5

TA = 85

TA = 25

POWER ADDED EFFICIENCY

POWER CONTROL VOLTAGE

Frequency = 900 MHz
VDD = 4.8 V
PI = 5 dBm

TA = 40

0.5

1.5

VPC Power Control Voltage V

2.5

Power

Added Efficiency %

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 6

TA = 85

TA = 25

OUTPUT POWER

INPUT POWER

Frequency = 900 MHz
VDD = 4.8 V
VPC = 3 V Pulsed

20

15

10

PO Output Power dBm

PI Input Power dBm

TA = 40

Figure 7

TA = 40

TA = 85

TA = 25

OUTPUT POWER

FREQUENCY

PI = 5 dBm
VDD = 4.8 V
VPC = 3 V Pulsed

850 860 870 880 890 900 910

PO Output Power dBm

f Frequency MHz

920 930

940 950

Figure 8

2.5

3.5

4.5

PO Output Power dBm

5.5

TA = 40

TA = 85

TA = 25

OUTPUT POWER

DRAIN VOLTAGE

Frequency = 900 MHz
PI = 5 dBm
VPC = 3 V Pulsed

VDD Drain Voltage V

Figure 9

10

20

30

0.5

1.5

VPC Power Control Voltage V

2.5

TA = 40

TA = 85

TA = 25

OUTPUT POWER

POWER CONTROL VOLTAGE

Frequency = 900 MHz
VDD = 4.8 V
VPC = 3 V Pulsed

PO Output Power dBm

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B MAY 1997 REVISED AUGUST 1998

POST OFFICE BOX 655303

DALLAS, TEXAS 75265

MECHANICAL DATA

PWP (R-PDSO-G**)

PowerPAD

PLASTIC SMALL-OUTLINE PACKAGE

0,25

0,50

0,75

0,15 NOM

Gage Plane

4073225/E 03/97

6,60

6,20

0,30

0,19

4,30

4,50

1,20 MAX

Seating Plane

 8

Thermal Pad (3,18

2,41 NOM)

(see Note C)

0,10

0,65

0,10

9,80

7,90

9,60

7,70

5,10

4,90

DIM

A MAX

A MIN

PINS **

6,40

6,60

0,15
0,05

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice.

C. The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. This solderable pad

is electrically and thermally connected to the backside of the die.

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL
APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER'S RISK.

In order to minimize risks associated with the customer's applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI's publication of information regarding any third
party's products or services does not constitute TI's approval, warranty or endorsement thereof.

1998, Texas Instruments Incorporated

Part Number TRF7610