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Part Number SN74CBTD16210

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SN74CBTD16210
20-BIT FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS049C ­ MARCH 1998 ­ REVISED MAY 1998
1
POST OFFICE BOX 655303
·
DALLAS, TEXAS 75265
D
5-
Switch Connection Between Two Ports
D
TTL-Compatible Input Levels
D
Designed to Be Used in Level-Shifting
Applications
D
Package Options Include Plastic 300-mil
Shrink Small-Outline (DL), Thin Shrink
Small-Outline (DGG), and Thin Very
Small-Outline (DGV) Packages
description
The SN74CBTD16210 provides 20 bits of
high-speed TTL-compatible bus switching. The
low on-state resistance of the switch allows
connections to be made with minimal propagation
delay. A diode to V
CC
is integrated in the circuit to
allow for level shifting between 5-V inputs and
3.3-V outputs.
The device is organized as a dual 10-bit bus
switch with separate output-enable (OE) inputs. It
can be used as two 10-bit bus switches or as one
20-bit bus switch. When OE is low, the associated
10-bit bus switch is on and A port is connected to
B port. When OE is high, the switch is open, and
a high-impedance state exists between the ports.
The SN74CBTD16210 is characterized for
operation from ­40
°
C to 85
°
C.
FUNCTION TABLE
(each 10-bit bus switch)
INPUT
OE
FUNCTION
L
A port = B port
H
Z
Copyright
©
1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DGG, DGV, OR DL PACKAGE
(TOP VIEW)
NC ­ No internal connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
1A1
1A2
1A3
1A4
1A5
1A6
GND
1A7
1A8
1A9
1A10
2A1
2A2
V
CC
2A3
GND
2A4
2A5
2A6
2A7
2A8
2A9
2A10
1OE
2OE
1B1
1B2
1B3
1B4
1B5
GND
1B6
1B7
1B8
1B9
1B10
2B1
2B2
2B3
GND
2B4
2B5
2B6
2B7
2B8
2B9
2B10
SN74CBTD16210
20-BIT FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS049C ­ MARCH 1998 ­ REVISED MAY 1998
2
POST OFFICE BOX 655303
·
DALLAS, TEXAS 75265
logic diagram (positive logic)
1A1
1A10
1OE
1B1
1B10
2A1
2A10
2OE
2B1
2B10
2
12
48
13
24
47
46
36
35
25
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V
CC
­0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(see Note 1)
­0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous channel current
128 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input clamp current, I
IK
(V
I
< 0)
­50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance,
JA
(see Note 2): DGG package
89
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DGV package
93
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DL package
94
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
­65
°
C to 150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51.
recommended operating conditions (see Note 3)
MIN
MAX
UNIT
VCC
Supply voltage
4.5
5.5
V
VIH
High-level control input voltage
2
V
VIL
Low-level control input voltage
0.8
V
TA
Operating free-air temperature
­40
85
°
C
NOTE 3: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
SN74CBTD16210
20-BIT FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS049C ­ MARCH 1998 ­ REVISED MAY 1998
3
POST OFFICE BOX 655303
·
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIK
VCC = 4.5 V,
II = ­18 mA
­1.2
V
VOH
See Figure 2
II
VCC = 0 V,
VI = 5.5 V
10
µ
A
II
VCC = 5.5 V,
VI = 5.5 V or GND
±
1
µ
A
ICC
VCC = 5.5 V,
IO = 0,
VI = VCC or GND
1.5
mA
ICC
Control inputs
VCC = 5.5 V,
One input at 3.4 V,
Other inputs at VCC or GND
2.5
mA
Ci
Control inputs
VI = 3 V or 0
4.5
pF
Cio(OFF)
VO = 3 V or 0,
OE = VCC
5.5
pF
§
VI = 0
II = 64 mA
5
7
ron§
VCC = 4.5 V
VI = 0
II = 30 mA
5
7
VI = 2.4 V,
II = 15 mA
35
50
All typical values are at VCC = 5 V, TA = 25
°
C.
This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND.
§ Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by
the lowest voltage of the two (A or B) terminals.
switching characteristics over recommended operating free-air temperature range, C
L
= 50 pF
(unless otherwise noted) (see Figure 1)
PARAMETER
FROM
TO
MIN
MAX
UNIT
PARAMETER
(INPUT)
(OUTPUT)
MIN
MAX
UNIT
tpd¶
A or B
B or A
0.25
ns
ten
OE
A or B
1.5
9.8
ns
tdis
OE
A or B
1.5
8.9
ns
¶ The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when
driven by an ideal voltage source (zero output impedance).
SN74CBTD16210
20-BIT FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS049C ­ MARCH 1998 ­ REVISED MAY 1998
4
POST OFFICE BOX 655303
·
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
VOH
VOL
From Output
Under Test
CL = 50 pF
(see Note A)
LOAD CIRCUIT
S1
7 V
Open
GND
500
500
tPLH
tPHL
Output
Control
(low-level
enabling)
Output
Waveform 1
S1 at 7 V
(see Note B)
Output
Waveform 2
S1 at Open
(see Note B)
tPZL
tPZH
tPLZ
tPHZ
1.5 V
1.5 V
1.5 V
1.5 V
3 V
0 V
1.5 V
1.5 V
VOH
VOL
0 V
1.5 V
VOL + 0.3 V
1.5 V
VOH ­ 0.3 V
0 V
Input
3 V
3.5 V
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
Output
tpd
tPLZ/tPZL
tPHZ/tPZH
Open
7 V
Open
TEST
S1
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR
10 MHz, ZO = 50
, tr
2.5 ns, tf
2.5 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd.
Figure 1. Load Circuit and Voltage Waveforms
SN74CBTD16210
20-BIT FET BUS SWITCH
WITH LEVEL SHIFTING
SCDS049C ­ MARCH 1998 ­ REVISED MAY 1998
5
POST OFFICE BOX 655303
·
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
2
2.5
2.25
3
2.75
3.25
3.5
3.75
4.5
4.75
5
5.25
5.5
VCC ­ Supply Voltage ­ V
1.75
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
V
OH
­ Output V
oltage High ­ V
TA = 85
°
C
5.75
1.5
4
2
2.5
2.25
3
2.75
3.25
3.5
3.75
4.5
4.75
5
5.25
5.5
VCC ­ Supply Voltage ­ V
1.75
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
TA = 25
°
C
5.75
1.5
4
2
2.5
2.25
3
2.75
3.25
3.5
3.75
4.5
4.75
5
5.25
5.5
­100
µ
A
­6 mA
­12 mA
­24 mA
VCC ­ Supply Voltage ­ V
1.75
OUTPUT VOLTAGE HIGH
vs
SUPPLY VOLTAGE
TA = 0
°
C
5.75
1.5
4
V
OH
­ Output V
oltage High ­ V
V
OH
­ Output V
oltage High ­ V
­100
µ
A
­6 mA
­12 mA
­24 mA
­100
µ
A
­6 mA
­12 mA
­24 mA
Figure 2. V
OH
Values