1
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VP2450
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
TO-243AA*
Die
-500V
30
-0.2A
VP2450N3
VP2450N8
VP2450ND
Ordering Information
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
VP4E
Where
= 2-week alpha date code
2
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
°
C
°
C/W
°
C/W
TO-92
-0.1A
-0.3A
1W
125
170
-0.1A
-0.3A
TO-243AA
-0.16A
-0.80A
1.6W
15
78
-0.16A
-0.80A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-500
V
GS(th)
Gate Threshold Voltage
-1.5
-3.5
V
V
GS
= V
DS
, I
D
= -1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.8
mV/
°
C
V
GS
= V
DS
, I
D
= -1mA
I
GSS
Gate Body Leakage
-100
nA
V
GS
=
±
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-10
”
A
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
I
D(ON)
ON-State Drain Current
-75
V
GS
= -4.5V, V
DS
= -15V
-200
V
GS
= -10V, V
DS
= -15V
R
DS(ON)
35
V
GS
= -4.5V, I
D
= -50mA
30
V
GS
= -10V, I
D
= -100mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
°
C
V
GS
= -10V, I
D
= -100mA
G
FS
Forward Transconductance
150
320
m
V
DS
= -15V, I
D
= -100mA
C
ISS
Input Capacitance
190
C
OSS
Common Source Output Capacitance
75
pF
C
RSS
Reverse Transfer Capacitance
20
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
25
t
d(OFF)
Turn-OFF Delay Time
45
t
f
Fall Time
25
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -100mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= -100mA
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
”
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
-1 mA
V
V
GS
= 0V, I
D
= -250
”
A
V
GS
= 0V, V
DS
=- 25V
f = 1 MHz
V
DD
= -25V
ns
I
D
= -200mA
R
GEN
= 25
VP2450
3
Typical Performance Curves
I D
(Amperes)
VDS (Volts)
Output Characteristics
0
-2
-4
-6
-8
-10
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
G
FS
(Siemens)
ID (Milliamperes)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
PD
(W
atts)
TA (ĄC)
Maximum Rated Safe Operating Area
I D
(amperes)
VDS (Volts)
Thermal Response Characteristics
Thermal
Resistance
(normalized)
tp (seconds)
-1
-1000
-100
-10
0
-10
-20
-30
-40
-50
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
0
-100
-200
-300
-400
-500
0.0
0.2
0.4
0.6
0.8
1.0
VDS=-20V
TA=-55ĄC
TA=25ĄC
TA=125ĄC
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
TO-243AA
TO-92
TO-243AA (DC)
TO-243AA (pulsed)
TA=25ĄC
TO-92 (pulsed)
-0.001
-0.01
-0.1
-1.0
TO-92 (DC)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
TO-243AA
T
A
= 25
°
C
P
D
= 1.6W
TO-92
P
D
= 1W
T
C
= 25
°
C
V
GS
=-10V
V
GS
=-6.0V
V
GS
=-4.5V
V
GS
=-3.5V
V
GS
= -10V
V
GS
= -3.5V
V
GS
= -4.5V
V
GS
= -6.0V
VP2450
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 · FAX: (408) 222-4895
www.supertex.com
07/08/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
-50
0
50
100
150
0.6
1.0
1.4
1.8
2.2
0.7
0.9
1.1
1.3
1.5
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
VGS(th) and RDS(on) Variation w/ Temperature
V
GS(th)
(normalized)
TJ (
°
C)
R
DS(ON)
(normalized)
Transfer Characteristics
I D
(Amperes)
VGS (Volts)
0
-1
-2
-3
-4
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VDS = -20V
TA = -55
°
C
TA = 25
°
C
TA = 125
°
C
VTH @ -1mA
RDS(on) @ -10V, -0.1A
0
-10
-20
-30
-40
0
100
200
300
400
0.0
1.0
2.0
3.0
0
-2
-4
-6
-8
-10
BV
DSS
(Normalized)
TJ (
°
C)
Capacitance vs. Drain Source Voltage
C
(picofarads)
VDS (volts)
f = 1MHz
CISS
COSS
CRSS
BV
DSS
Variation with Temperature
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
0
20
40
60
80
VGS = -4.5V
VGS = -10V
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
VDS=-20V
VDS=-40V
ID = -100mA
VP2450
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