1/5
XL0840
®
January 2002 - Ed: 1A
SENSITIVE GATE 0.8A SCRs
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
TI = 55°C
0.8
A
I
T(AV)
Average on-state current (180° conduction angle)
TI = 55°C
0.5
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
8
A
tp = 10 ms
7
I
2
t
I
2
t Value for fusing
tp = 10 ms
Tj = 25°C
0.24
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100ns
F = 60 Hz
Tj = 125°C
30
A/
µ
s
I
GM
Peak gate current
tp = 20µs
Tj = 125°C
1
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
0.1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
ABSOLUTE RATINGS (limiting values)
Symbol
Value
Unit
I
T(RMS)
0.8
A
V
DRM
400
V
I
GT
200
µA
MAIN FEATURES
TO-92
K
G A
G
A
K
Thanks to its highly sensitive triggering levels, the
XL0840 device is suitable for all high volumes appli-
cations where the available gate current is limited,
such as Christmas lights control.
DESCRIPTION
XL0840
2/5
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (DC)
150
°C/W
Rth(j-l)
Junction to lead (DC)
80
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
XL0840
Unit
I
GT
V
D
=12V R
L
=140
MAX.
200
µA
V
GT
MAX.
0.8
V
V
GD
V
D
=V
DRM
R
L
=3.3k
R
GK
= 1k
Tj = 125°C
MIN.
0.1
V
V
RG
I
RG
= 10µA
MIN.
8
V
I
H
I
T
= 50mA R
GK
= 1k
MAX.
5
mA
I
L
I
G
= 1mA R
GK
= 1k
MAX.
6
mA
dV/dt
V
D
=67% V
DRM
R
GK
= 1k
Tj = 125°C
MIN.
75
V/
µ
s
V
TM
I
TM
= 1.6A
tp = 380µs
Tj = 25°C
MAX.
1.95
V
V
TO
Threshold voltage
Tj = 125°C
MAX.
1.0
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
600
m
I
DRM
V
DRM
R
GK
= 1k
Tj = 25°C
MAX.
1
µA
Tj = 125°C
100
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Part Number
Voltage
Sensitivity
Package
XL0840
400V
200 µA
TO-92
PRODUCT SELECTOR
X L 08 40
SENSITIVE SCR
LIGHT CONTROL
CURRENT:0.8A
VOLTAGE:
40: 400V
ORDERING INFORMATION
Part Number
Marking
Weight
Base quantity
Packing mode
XL0840
XL0840
0.2 g
2500
Bulk
OTHER INFORMATION
XL0840
3/5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
25
50
75
100
125
Tamb(°C)
=180°
D.C.
IT(av)(A)
Fig. 2-2: Average and D.C. on-state current ver-
sus ambient temperature (device mounted on FR4
with recommended pad layout).
1.E-02
1.E-01
1.E+00
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
K=[Zth(j-a)/Rth(j-a)]
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
IT(av)(A)
=180°
P(W)
180°
Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
25
50
75
100
125
Tlead(°C)
=180°
D.C.
IT(av)(A)
Fig. 2-1: Average and D.C. on-state current ver-
sus lead temperature.
0
1
2
3
4
5
6
7
8
9
10
11
0.01
0.10
1.00
10.00
Rgk(k )
Tj=25°C
IH [Rgk] / IH [Rgk=1k ]
Fig. 5: Relative variation of holding current versus
gate-cathode resistance (typical values).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-40 -30 -20 -10
0
10
20 30
40
50
60 70
80
90 100 110 120 130
Tj(°C)
IGT
IH & IL
(Rgk=1kW)
IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25°C]
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
4/5
XL0840
0
1
2
3
4
5
0.10
1.00
10.00
Rgk(k )
Tj=125°C
VD=270V
dV/dt [Rgk] / dV/dt [Rgk=1k ]
Fig. 6: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values).
0
1
2
3
4
5
6
7
8
9
10
1.00
10.00
Cgk(nF)
Tj=125°C
VD=270V
Rgk=1kW
dV/dt [Cgk] / dV/dt [Rgk=1k ]
Fig. 7: Relative variation of dV/dt immunity versus
gate-cathode capacitance (typical values).
0
1
2
3
4
5
6
7
8
1
10
100
1000
Number of cycles
Non repetitive
Tj initial=25°C
Repetitive
Tlead=50°C
tp=10ms
ITSM(A)
Fig. 8: Surge peak on-state current versus number
of cycles.
0.1
1.0
10.0
100.0
0.01
0.10
1.00
10.00
tp(ms)
Tj initial=25°C
ITSM
I²t
ITSM(A), I t (A s)
2
2
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0.01
0.10
1.00
10.00
0
1
2
3
4
5
6
VTM(V)
Tj=25°C
Tj=125°C
Tj max. :
Vto = 1.00 V
Rd = 600 m
ITM(A)
Fig. 10: On-state characteristics (maximum val-
ues).
5/5
XL0840
PACKAGE MECHANICAL DATA
TO-92
D
F
a
E
B
A
C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
1.35
0.053
B
4.70
0.185
C
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.50
0.019
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