January 2003
1/10
®
6
P
VNQ860
/
VNQ860SP
QUAD CHANNEL HIGH SIDE DRIVER
(*) Per each channel
s
CMOS COMPATIBLE I/Os
s
UNDERVOLTAGE & OVERVOLTAGE
n
SHUT- DOWN
s
SHORTED LOAD PROTECTION
s
THERMAL SHUTDOWN
s
VERY LOW STAND-BY CURRENT
s
PROTECTION AGAINST
LOSS OF GROUND
DESCRIPTION
The VNQ860, VNQ860SP are monolithic devices
made using
|
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind load
with one side connected to ground. Active current
limitation combined with thermal shutdown and
automatic restart protect the device against
overload. Device automatically turns off in case of
ground pin disconnection. This device is
especially suitable for industrial applications in
norms conformity with IEC1131 (Programmable
Controllers International Standard).
TYPE
R
DS(on)
(*)
I
OUT
V
CC
VNQ860
VNQ860SP
270m
0.25A
36V
1
SO-20
V
CC
Power CLAMP
GND
I/O 1
STATUS
OUTPUT1
CURRENT LIMITER
Power CLAMP
OUTPUT2
CURRENT LIMITER
Power CLAMP
OUTPUT3
CURRENT LIMITER
Power CLAMP
OUTPUT4
CURRENT LIMITER
I/O 2
OVERTEMP
I/O 3
I/O 4
V
CC
CLAMP
LOGIC
UNDERVOLTAGE
DETECTION
OVERVOLTAGE
DETECTION
OVERTEMP
OVERTEMP
OVERTEMP
1
10
PowerSO-10
TM
ORDER CODES
SO-20
PowerSO-10
TM
VNQ860
VNQ860SP
BLOCK DIAGRAM
2/10
VNQ860 / VNQ860SP
1
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
Symbol
Parameter
Value
Unit
SO-20
PowerSO-10
V
CC
DC supply voltage
41
V
- V
CC
Reverse DC supply voltage
- 0.3
V
- I
GND
DC reverse ground pin current
- 200
mA
I
OUT
DC output current
Internally Limited
A
- I
OUT
Reverse DC output current
- 2
A
I
IN
DC Input current
+/- 10
m
A
V
IN
Input voltage range
-3/+V
CC
V
V
STAT
DC Status voltage
+ V
CC
V
V
ESD
Electrostatic discharge (R=1.5 K
; C=100 pF)
2000
V
P
tot
Power dissipation T
C
=25 °C
16
90
W
T
j
Junction operating temperature
Internally Limited
°C
T
c
Case operating temperature
- 40 to 150
°C
T
stg
Storage temperature
- 55 to 150
°C
I
CC
I
GND
OUTPUT 3
V
CC
GND
I/O2
I
OUT3
V
CC
V
OUT4
OUTPUT 2
I
OUT2
V
OUT3
I/O1
I
I/O1
OUTPUT 1
I
OUT1
OUTPUT 4
I
OUT4
V
OUT2
V
OUT1
I
I/O2
I
I/O4
I
STAT
I/O 4
I/O 3
STATUS
V
I/O4
V
I/O3
I
I/O3
V
I/O2
V
I/O1
V
STAT
N.C.
V
CC
V
CC
V
CC
V
CC
GROUND
OUTPUT 3
I/O 3
OUTPUT 1
V
CC
V
CC
V
CC
V
CC
I/O 4
N.C.
OUTPUT 4
1
10
11
20
I/O 2
OUTPUT 2
STATUS
I/O 1
1
2
3
4
5
6
7
8
9
10
TAB
OUTPUT 2
I/O 2
STATUS
I/O 1
OUTPUT 1
OUTPUT 3
I/O 3
GND
I/O 4
OUTPUT 4
V
CC
3/10
VNQ860 / VNQ860SP
THERMAL DATA
(*) When mounted on FR4 printed circuit board with 0.5 cm
2
of copper area (at least 35
µ
thick) connected to all V
CC
pins.
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40
o
C<T
j
<150
o
C; unless otherwise specified)
POWER
SWITCHING (V
CC
=24V) (Per channel)
PROTECTIONS (Per channel)
Symbol
Parameter
Value
Unit
SO-20
PowerSO-10
R
tj-amb
Thermal resistance junction-pins
(MAX)
8
-
o
C/W
R
tj-case
Thermal resistance junction-ambient (*)
(MAX)
58
50
o
C/W
R
tj-pin
Thermal resistance junction-case
(MAX)
-
1.4
o
C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
Operating supply voltage
5.5
36
V
V
USD
Undervoltage shut-down
3
4
5.5
V
V
OV
Overvoltage shut-down
36
42
48
V
R
ON
On state resistance
(per channel)
I
OUT
=0.25A; T
j
=25
o
C
I
OUT
=0.25A
270
540
m
m
I
S
Supply current
Off state;
V
CC
=24V; T
c
=25
o
C
On state (all channels on)
70
5
120
10
µ
A
mA
I
LGND
Output current
V
CC
-V
STAT
=V
IN
=V
GND
=24V
V
OUT
=0V
1
mA
I
L(off)
Off state output current
V
IN
=V
OUT
=0V
0
10
µ
A
I
OUTleak
Off state output leakage
current
V
IN
=V
GND
=0V; V
CC
=V
OUT
=24V;
T
amb
=25
o
C
240
µ
A
I
OUTleak
Off state output leakage
current
V
IN
=V
GND
=0V; V
CC
=24V;
V
OUT
=10V; T
amb
=25
o
C
100
µ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
D(on)
Turn-on delay time
R
L
=96
from V
IN
rising edge to
V
OUT
=2.4V
10
µ
s
t
D(off)
Turn-off delay time
R
L
=96
from V
IN
falling edge to
V
OUT
=21.6V
40
µ
s
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=96
from V
OUT
=2.4V to 19.2V
0.75
V
/µ
s
(dV
OUT
/dt)
off
Turn-off voltage slope
R
L
=96
from V
OUT
=21.6V to 2.4V
0.25
V
/µ
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
lim
Current limitation
0.35
0.7
1.1
A
T
(hyst)
Thermal hysteresis
7
15
o
C
T
TSD
Thermal shut-down
temperature
150
175
200
o
C
T
R
Reset temperature
135
o
C
V
demag
Turn-off output clamp voltage I
OUT
=0.25A
V
CC
-47 V
CC
-52 V
CC
-59
V
1
4/10
VNQ860 / VNQ860SP
ELECTRICAL CHARACTERISTICS (continued)
LOGIC INPUT (Per channel)
STATUS PIN
TRUTH TABLE
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Low level input voltage
1.25
V
I
IL
Low level input current
V
IN
=1.25V
1
µ
A
V
IH
High level input voltage
3.25
V
I
IH
High level input current
V
IN
=3.25V
10
µ
A
V
I(hyst)
Input hysteresis Voltage
0.5
V
I
IN
Input current
V
IN
=V
CC
=36V
200
µ
A
V
OL
I/O Output voltage
I
IN
=5mA (Fault condition)
1
V
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
STAT
Status low output voltage
I
STAT
=5mA (Fault condition)
1
V
I
LSTAT
Status leakage current
Normal operation; V
STAT
=V
CC
=36V
10
µ
A
C
STAT
Status pin input capacitance
Normal operation; V
STAT
=5V
100
pF
CONDITIONS
MCOUTn
I/On
OUTPUTn
STATUS
Normal operation
L
H
L
H
L
H
H
H
Current limitation
L
H
L
H
L
X
H
H
Overtemperature
L
H
L
Driven low
L
L
L
L
Undervoltage
L
H
L
H
L
L
X
X
Overvoltage
L
H
L
H
L
L
H
H
2
5/10
VNQ860 / VNQ860SP
1
SWITCHING CHARACTERISTICS
t
V
OUT
90%
10%
(dV
OUT
/dt)
off
(dV
OUT
/dt)
on
80%
t
V
IN
t
d(on)
t
d(off)
t
r
t
f
Typical application schematic
MCU
VNQ860
I/On
OUTPUTn
MCOUTn
MCINn
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