®
October 2003 - Revision 1.2 (Working document)
1/18
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VND920P
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
1
(*) Per channel with all the output pins connected to the PCB.
s
CMOS COMPATIBLE INPUT
s
PROPORTIONAL LOAD CURRENT SENSE
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUTDOWN
s
CURRENT LIMITATION
s
PROTECTION AGAINST LOSS OF GROUND
AND LOSS OF V
CC
s
VERY LOW STAND-BY POWER DISSIPATION
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VND920P is a double chip device made by
using
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active V
CC
pin
voltage clamp protects the device against low
energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protect the device against overload. Built-
in analog current sense output delivers a current
proportional to the load current. Device
automatically turns off in case of ground pin
disconnection.
TYPE
R
DS(on)
I
OUT
V
CC
VND920P 16m
35 A (*)
36 V
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VND920P
VND920P13TR
(**) See application schematic at page 10
CONNECTION DIAGRAM (TOP VIEW)
V
CC
1
GND 1
INPUT 1
CURRENT SENSE 1
NC
V
CC
1
V
CC
2
GND 2
INPUT 2
CURRENT SENSE 2
V
CC
2
V
CC
2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 1
V
CC
1
OUTPUT 2
OUTPUT 2
OUTPUT 1
OUTPUT 1
NC
NC
NC
1
14
15
28
TARGET SPECIFICATION
2/18
VND920P
BLOCK DIAGRAM
UNDERVOLTAGE
OVERTEMPERATURE
V
CC
1
GND 1
INPUT 1
OUTPUT 1
OVERVOLTAGE
CURRENT
LIMITER
LOGIC
DRIVER
Power
CLAMP
V
CC
CLAMP
V
DS
LIMITER
DETECTION
DETECTION
DETECTION
K
I
OUT
CURRENT
SENSE 1
UNDERVOLTAGE
OVERTEMPERATURE
V
CC
2
GND 2
INPUT 2
OUTPUT 2
OVERVOLTAGE
CURRENT
LIMITER
LOGIC
DRIVER
Power
CLAMP
V
CC
CLAMP
V
DS
LIMITER
DETECTION
DETECTION
DETECTION
K
I
OUT
CURRENT
SENSE 2
3/18
VND920P
ABSOLUTE MAXIMUM RATING (Per each channel)
(**) Per island
CURRENT AND VOLTAGE CONVENTIONS
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
- 0.3
V
- I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
- 21
A
I
IN
DC Input Current
+/- 10
mA
V
CSENSE
Current Sense Maximum Voltage
-3
+15
V
V
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
4000
2000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=0.25mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150ºC; I
L
=45A)
355
mJ
P
tot
Power Dissipation T
l
25°C
6.25 (**)
W
T
j
Junction Operating Temperature
Internally limited
°C
T
c
Case Operating Temperature
- 40 to 150
°C
T
STG
Storage Temperature
- 55 to 150
°C
I
S2
I
GND2
OUTPUT2
V
CC2
I
OUT2
V
CC2
V
SENSE2
CURRENT SENSE 1
I
SENSE1
V
OUT2
OUTPUT1
I
OUT1
CURRENT SENSE 2
I
SENSE2
V
SENSE1
V
OUT1
INPUT2
I
IN2
INPUT1
I
IN1
V
IN2
V
IN1
GROUND2
I
S1
V
CC1
V
CC1
I
GND1
GROUND1
4/18
VND920P
THERMAL DATA (Per island)
(*) When mounted on a standard single-sided FR-4 board with 1cm
2
of Cu (at least 35
µ
m thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40
°C
<T
j
<150
°C
unless otherwise specified)
(Per island)
POWER
SWITCHING (V
CC
=13V)
LOGIC INPUT
Symbol
Parameter
Value
Unit
R
thj-lead
Thermal Resistance Junction-lead
20
°C/W
R
thj-amb
Thermal Resistance Junction-ambient (one chip ON)
55 (*)
°C/W
R
thj-amb
Thermal Resistance Junction-ambient (two chips ON)
42 (*)
°C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
Operating Supply Voltage
5.5
13
36
V
V
USD
Undervoltage Shut-down
3
4
5.5
V
V
OV
Overvoltage Shut-down
36
V
R
ON
On State Resistance
I
OUT
=10A; T
j
=25°C
I
OUT
=10A
I
OUT
=3A; V
CC
=6V
16
32
55
m
m
m
V
clamp
Clamp Voltage
I
CC
=20mA (See note 1)
41
48
55
V
I
S
Supply Current
Off State; V
CC
=13V; V
IN
=V
OUT
=0V
Off State; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25°C
On State; V
CC
=13V; V
IN
=5V; I
OUT
=0A;
R
SENSE
=3.9K
10
10
25
20
5
µ
A
µ
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V
0
50
µ
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
µ
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C
5
µ
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25°C
3
µ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=1.3
(see figure 2)
50
µ
s
t
d(off)
Turn-off Delay Time
R
L
=1.3
(see figure 2)
50
µ
s
dV
OUT
/dt
(on)
Turn-on Voltage Slope
R
L
=1.3
(see figure 2)
See
relative
diagram
V/
µ
s
dV
OUT
/dt
(off)
Turn-off Voltage Slope
R
L
=1.3
(see figure 2)
See
relative
diagram
V/
µ
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
=1.25V
1
µ
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
=3.25V
10
µ
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
=1mA
I
IN
=-1mA
6
6.8
-0.7
8
V
V
1
Note 1: V
clamp
and V
OV
are correlated. Typical difference is 5V.
5/18
VND920P
2
ELECTRICAL CHARACTERISTICS (continued)
CURRENT SENSE (9V
V
CC
16V) (See Fig.1)
PROTECTIONS
Note 2: current sense signal delay after positive input slope
Note: Sense pin doesn't have to be left floating.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
K
1
I
OUT
/I
SENSE
I
OUT
=1A; V
SENSE
=0.5V;
T
j
= -40°C...150°C
3300
4400
6000
dK
1
/K
1
Current Sense Ratio Drift
I
OUT
=1A; V
SENSE
=0.5V;
T
j
= -40°C...+150°C
-10
+10
%
K
2
I
OUT
/I
SENSE
I
OUT
=10A; V
SENSE
=4V; T
j
=-40°C
T
j
=25°C...150°C
4200
4400
4900
4900
6000
5750
dK
2
/K
2
Current Sense Ratio Drift
I
OUT
=10A; V
SENSE
=4V;
T
j
=-40°C...+150°C
-8
+8
%
K
3
I
OUT
/I
SENSE
I
OUT
=30A; V
SENSE
=4V; T
j
=-40°C
T
j
=25°C...150°C
4200
4400
4900
4900
5500
5250
dK
3
/K
3
Current Sense Ratio Drift
I
OUT
=30A; V
SENSE
=4V;
T
j
=-40°C...+150°C
-6
+6
%
I
SENSEO
Analog Sense Leakage
Current
V
CC
=6...16V; I
OUT
=0A;V
SENSE
=0V;
T
j
=-40°C...+150°C
0
10
µ
A
V
SENSE
Max Analog Sense Output
Voltage
V
CC
=5.5V; I
OUT
=5A; R
SENSE
=10K
V
CC
>8V; I
OUT
=10A; R
SENSE
=10K
2
4
V
V
V
SENSEH
Sense Voltage in
Overtemperature
conditions
V
CC
=13V; R
SENSE
=3.9K
5.5
V
R
VSENSEH
Analog Sense Output
Impedance in
Overtemperature
Condition
V
CC
=13V; T
j
>T
TSD
; All channels open
400
t
DSENSE
Current sense delay
response
to 90% I
SENSE
(see note 2)
500
µ
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
°C
T
R
Reset Temperature
135
°C
T
hyst
Thermal Hysteresis
7
15
°C
I
lim
DC Short Circuit Current
V
CC
=13V
5V<V
CC
<36V
30
45
75
75
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=2A; V
IN
=0V; L=6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
V
ON
Output Voltage Drop
Limitation
I
OUT
=1A; T
j
=-40°C....+150°C
50
mV
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