®
March 2003
1/18
VND830LSP
DOUBLE CHANNEL HIGH SIDE DRIVER
(*) Per each channel
s
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
LOSS OF GROUND PROTECTION
s
VERY LOW STAND-BY CURRENT
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VND830LSP is a monolithic device made by
using
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both in on and
off state. The openload threshold is aimed at
detecting the 5W/12V standard bulb as an
openload fault in the on state. Device
automatically turns off in case of ground pin
disconnection.
TYPE
R
DS(on)
I
OUT
V
CC
VND830LSP
60 m
(*)
18 A (*)
36 V
1
10
PowerSO-10
TM
OVERTEMP. 1
V
CC
GND
INPUT1
OUTPUT1
OVERVOLTAGE
LOGIC
DRIVER 1
STATUS1
V
CC
CLAMP
UNDERVOLTAGE
CLAMP 1
OPENLOAD ON 1
CURRENT LIMITER 1
OPENLOAD OFF 1
OUTPUT2
DRIVER 2
CLAMP 2
OPENLOAD ON 2
OPENLOAD OFF 2
OVERTEMP. 2
INPUT2
STATUS2
CURRENT LIMITER 2
BLOCK DIAGRAM
(**) See application schematic at page 8
2/18
VND830LSP
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
- 0.3
V
- I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
- 6
A
I
IN
DC Input Current
+/- 10
mA
I
STAT
DC Status Current
+/- 10
mA
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5K
;
C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
P
tot
Power Dissipation T
C
=25°C
74
W
E
MAX
Maximum Switching Energy
(L=0.14mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150ºC; I
L
=14A)
52
mJ
T
j
Junction Operating Temperature
Internally Limited
°C
T
c
Case Operating Temperature
- 40 to 150
°C
T
stg
Storage Temperature
- 55 to 150
°C
1
CURRENT AND VOLTAGE CONVENTIONS
1
2
3
4
5
6
7
8
9
10
11
OUTPUT 1
OUTPUT 1
N.C.
OUTPUT 2
OUTPUT 2
GROUND
INPUT 1
STATUS 1
STATUS 2
INPUT 2
V
CC
I
S
I
GND
OUTPUT 2
V
CC
GND
STATUS 2
INPUT 2
I
OUT2
I
IN2
I
STAT2
V
STAT2
V
IN2
V
CC
V
OUT2
OUTPUT 1
I
OUT1
V
OUT1
INPUT 1
I
IN1
STATUS 1
I
STAT1
V
IN1
V
STAT1
3/18
VND830LSP
THERMAL DATA
(*) When mounted on a standard single-sided FR-4 board with 50mm
2
of Cu (at least 35
µ
m thick). Horizontal mounting and no artificial air
flow.
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40°C< T
j
<150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUT
(**) Per device
SWITCHING (V
CC
=13V)
LOGIC INPUT
Symbol
Parameter
Value
Unit
R
thj-case
Thermal Resistance Junction-case
2
°C/W
R
thj-amb
Thermal Resistance Junction-ambient
52 (*)
°C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
(**)
Operating Supply Voltage
5.5
13
36
V
V
USD
(**)
Undervoltage Shut-down
3
4
5.5
V
V
OV
(**) Overvoltage
Shut-down
36
V
R
ON
On State Resistance
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; V
CC
> 8V
60
120
m
m
I
S
(**)
Supply Current
Off State; V
CC
=13V; V
IN=
V
OUT
=0V
Off State; V
CC
=13V; T
j
=25°C;
V
IN=
V
OUT
=0V
On State; V
CC
=13V
12
12
5
40
25
7
µ
A
µ
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=36V; T
j
=125°C
0
50
µ
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
µ
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=125°C
5
µ
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=25°C
3
µ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=6.5
from V
IN
rising edge to
V
OUT
=1.3V
30
µ
s
t
d(off)
Turn-off Delay Time
R
L
=6.5
from V
IN
falling edge to
V
OUT
=11.7V
30
µ
s
dV
OUT
/
dt
(on)
Turn-on Voltage Slope
R
L
=6.5
from V
OUT
=1.3V to
V
OUT
=10.4V
See
relative
diagram
V/
µ
s
dV
OUT
/
dt
(off)
Turn-off Voltage Slope
R
L
=6.5
from V
OUT
=11.7V to
V
OUT
=1.3V
See
relative
diagram
V/
µ
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
= 1.25V
1
µ
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
= 3.25V
10
µ
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
= 1mA
I
IN
= -1mA
6
6.8
-0.7
8
V
V
1
4/18
VND830LSP
ELECTRICAL CHARACTERISTICS (continued)
STATUS PIN
PROTECTIONS
OPENLOAD DETECTION
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
STAT
Status Low Output Voltage I
STAT
= 1.6 mA
0.5
V
I
LSTAT
Status Leakage Current
Normal Operation; V
STAT
= 5V
10
µ
A
C
STAT
Status Pin Input
Capacitance
Normal Operation; V
STAT
= 5V
100
pF
V
SCL
Status Clamp Voltage
I
STAT
= 1mA
I
STAT
= - 1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
°C
T
R
Reset Temperature
135
°C
T
hyst
Thermal Hysteresis
7
15
°C
t
SDL
Status Delay in Overload
Conditions
T
j
>T
TSD
20
µ
s
I
lim
Current limitation
V
CC
=13V
5.5V < V
CC
< 36V
18
23
29
29
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=2A; L= 6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
OL
Openload ON State
Detection Threshold
V
IN
=5V 0.6
0.9
1.2
A
t
DOL(on)
Openload ON State
Detection Delay
I
OUT
=0A 200
µ
s
V
OL
Openload OFF State
Voltage Detection
Threshold
V
IN
=0V
1.5
2.5
3.5
V
T
DOL(off)
Openload Detection Delay
at Turn Off
1000
µ
s
2
1
V
INn
V
STATn
t
DOL(off)
OPEN LOAD STATUS TIMING (with external pull-up)
V
INn
V
STATn
OVER TEMP STATUS TIMING
t
SDL
I
OUT
< I
OL
V
OUT
> V
OL
t
DOL(on)
T
j
> T
TSD
t
SDL
5/18
VND830LSP
1
t
t
V
OUTn
V
INn
80%
10%
dV
OUT
/dt
(on)
t
d(off)
90%
dV
OUT
/dt
(off)
t
d(on)
Switching time Waveforms
TRUTH TABLE
CONDITIONS
INPUT
OUTPUT
STATUS
Normal Operation
L
H
L
H
H
H
Current Limitation
L
H
H
L
X
X
H
(T
j
< T
TSD
) H
(T
j
> T
TSD
) L
Overtemperature
L
H
L
L
H
L
Undervoltage
L
H
L
L
X
X
Overvoltage
L
H
L
L
H
H
Output Voltage > V
OL
L
H
H
H
L
H
Output Current < I
OL
L
H
L
H
H
L
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