®
July 2003
1/17
VND830ASP
DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
(*) Per channel
s
DC SHORT CIRCUIT CURRENT: 6A
s
CMOS COMPATIBLE INPUTS
s
PROPORTIONAL LOAD CURRENT SENSE
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
s
OVERVOLTAGE CLAMP
s
THERMAL SHUT-DOWN
s
CURRENT LIMITATION
s
VERY LOW STAND-BY POWER DISSIPATION
s
PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF V
CC
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The
VND830ASP
is a monolithic device made using
STMicroelectronics VIPower M0-3 technology. It
is intended for driving any kind of load with one
side connected to ground. Active V
CC
pin voltage
clamp protects the device against low energy
spikes (see ISO7637 transient compatibility table).
This device has two channels in high side
configuration; each channel has an analog sense
output on which the sensing current is proportional
(according to a known ratio) to the corresponding
load current. Built-in thermal shut-down and
outputs current limitation protect the chip from
over temperature and short circuit. Device turns off
in case of ground pin disconnection.
TYPE
R
DS(on)
I
OUT
V
CC
VND830ASP
60 m
(*)
6 A (*)
36 V (*)
1
10
PowerSO-10
TM
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10
TM
VND830ASP VND830ASP13TR
LOGIC
UNDERVOLTAGE
OVERVOLTAGE
OVERTEMP. 1
OVERTEMP. 2
I
LIM2
PwCLAMP 2
K
I
OUT2
I
LIM1
PwCLAMP 1
K
I
OUT1
INPUT 1
INPUT 2
GND
V
CC
OUTPUT 1
CURRENT
SENSE 1
OUTPUT 2
CURRENT
SENSE 2
DRIVER 2
DRIVER 1
V
CC
CLAMP
Ot1
Ot2
Ot1
Ot2
V
dslim1
V
dslim2
BLOCK DIAGRAM
(**) See application schematic at page 8
2/17
VND830ASP
ABSOLUTE MAXIMUM RATING
CONNECTION DIAGRAM (TOP VIEW)
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
41
V
-V
CC
Reverse Supply Voltage
- 0.3
V
-I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
Output Current
Internally Limited
A
I
R
Reverse Output Current
- 6
A
I
IN
Input Current
+/- 10
mA
V
CSENSE
Current Sense Maximum Voltage
-3
+15
V
V
V
ESD
Electrostatic Discharge (Human Body Model: R=1.5
; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- V
CC
4000
2000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy
(L=1.8mH; R
L
=0
; V
bat
=13.5V; T
jstart
=150ºC; I
L
=9A)
100
mJ
P
tot
Power Dissipation at T
C
=25°C
74
W
T
j
Junction Operating Temperature
Internally Limited
°C
T
c
Case Operating Temperature
- 40 to 150
°C
T
stg
Storage Temperature
- 55 to 150
°C
CURRENT AND VOLTAGE CONVENTIONS
1
2
3
4
5
6
7
8
9
10
11
OUTPUT 2
OUTPUT 2
N.C.
OUTPUT 1
OUTPUT 1
GROUND
INPUT2
INPUT1
C.SENSE1
C.SENSE2
V
CC
I
S
I
GND
OUTPUT2
V
CC
I
OUT2
V
CC
V
SENSE2
CURRENT SENSE 1
I
SENSE1
V
OUT2
OUTPUT1
I
OUT1
CURRENT SENSE 2
I
SENSE2
V
SENSE1
V
OUT1
INPUT2
I
IN2
INPUT1
I
IN1
V
IN2
V
IN1
GROUND
3/17
VND830ASP
THERMAL DATA
(*) When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
µ
m thick). Horizontal mounting and no artificial air
flow
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40°C< T
j
<150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUT
SWITCHING (V
CC
=13V)
LOGIC INPUT (Channels 1,2)
Note 1: V
clamp
and V
OV
are correlated. Typical difference is 5V.
Symbol
Parameter
Value
Unit
R
thj-case
Thermal Resistance Junction-case
1.2
°C/W
R
thj-amb
Thermal Resistance Junction-ambient
51.2 (*)
°C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
CC
Operating Supply Voltage
5.5
13
36
V
V
USD
Undervoltage Shut-down
3
4
5.5
V
V
OV
Overvoltage Shut-down
36
V
R
ON
On State Resistance
I
OUT
=2A; T
j
=25°C
I
OUT
=2A; T
j
=150°C
60
120
m
m
V
clamp
Clamp voltage
I
CC
=20 mA (see note 1)
41
48
55
V
I
S
Supply Current
Off State; V
CC
=13V; V
IN=
V
OUT
=0V
Off State; V
CC
=13V; V
IN=
V
OUT
=0V;
T
j
=25°C
On State; V
IN
=5V; V
CC
=13V; I
OUT
=0A;
R
SENSE
=3.9K
12
12
40
25
7
µ
A
µ
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=36V; T
j
=125°C
0
50
µ
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
µ
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=125°C
5
µ
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; V
CC
=13V; T
j
=25°C
3
µ
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
t
d(on)
Turn-on Delay Time
R
L
=6.5
from V
IN
rising edge to
V
OUT
=1.3V
30
µ
s
t
d(off)
Turn-off Delay Time
R
L
=6.5
from V
IN
falling edge to
V
OUT
=11.7V
30
µ
s
dV
OUT
/dt
(on)
Turn-on Voltage Slope
R
L
=6.5
from V
OUT
=1.3V to V
OUT
=10.4V
See
relative
diagram
V/
µ
s
dV
OUT
/dt
(off)
Turn-off Voltage Slope
R
L
=6.5
from V
OUT
=11.7V to V
OUT
=1.3V
See
relative
diagram
V/
µ
s
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
IL
Input low level voltage
1.25
V
I
IL
Low level input current
V
IN
=1.25V
1
µ
A
V
IH
Input high level voltage
3.25
V
I
IH
High level input current
V
IN
=3.25V
10
µ
A
V
I(hyst)
Input hysteresis voltage
0.5
V
V
ICL
Input clamp voltage
I
IN
=1mA
I
IN
=-1mA
6
6.8
-0.7
8
V
V
1
4/17
VND830ASP
ELECTRICAL CHARACTERISTICS (continued)
PROTECTIONS
CURRENT SENSE (9V
V
CC
16V) (See figure 1)
Note 2: current sense signal delay after positive input slope.
Note: Sense pin doesn't have to be left floating.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
lim
Current limitation
Vcc=13V
5.5V<Vcc<36V
6
9
15
15
A
A
T
TSD
Thermal shut-down
temperature
150
175
200
°C
T
R
Thermal reset temperature
135
°C
T
HYST
Thermal hysteresis
7
15
°C
V
demag
Turn-off output voltage
clamp
I
OUT
=2A; V
IN
=0V; L=6mH
V
CC
-41 V
CC
-48 V
CC
-55
V
V
ON
Output voltage drop
limitation
I
OUT
=10mA 50
mV
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
K
0
I
OUT
/I
SENSE
I
OUT1
or I
OUT2
=0.05A; V
SENSE
=0.5V;
other channels open; T
j
= -40°C...150°C
600
1300
2000
K
1
I
OUT
/I
SENSE
I
OUT1
or I
OUT2
=0.25A; V
SENSE
=0.5V;
other channels open; T
j
= -40°C...150°C
1000
1400
1900
dK
1
/K
1
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=0.25A; V
SENSE
=0.5V;
other channels open; T
j
= -40°C...150°C
-10
+10
%
K
2
I
OUT
/I
SENSE
I
OUT1
or I
OUT2
=1.6A; V
SENSE
=4V; other
channels open; T
j
=-40°C
T
j
=25°C...150°C
1280
1300
1500
1500
1800
1780
dK
2
/K
2
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=1.6A; V
SENSE
=4V; other
channels open; T
j
=-40°C...150°C
-6
+6
%
K
3
I
OUT
/I
SENSE
I
OUT1
or I
OUT2
=2.5A; V
SENSE
=4V; other
channels open; T
j
=-40°C
T
j
=25°C...150°C
1280
1340
1500
1500
1680
1600
dK
3
/K
3
Current Sense Ratio Drift
I
OUT1
or I
OUT2
=2.5A; V
SENSE
=4V; other
channels open; T
j
=-40°C...150°C
-6
+6
%
I
SENSE
Analog Sense Leakage
Current
V
IN
=0V; I
OUT
=0A; V
SENSE
=0V;
T
j
=-40°C...150°C
V
IN
=5V; I
OUT
=0A; V
SENSE
=0V;
T
j
=-40°C...150°C
0
0
5
10
µ
A
µ
A
V
SENSE
Max Analog Sense Output
Voltage
V
CC
=5.5V; I
OUT1,2
=1.3A; R
SENSE
=10k
V
CC
>8V, I
OUT1,2
=2.5A; R
SENSE
=10k
2
4
V
V
V
SENSEH
Sense Voltage in
Overtemperature conditions
V
CC
=13V; R
SENSE
=3.9k
5.5
V
R
VSENSEH
Analog Sense Output
Impedance in
Overtemperature Condition
V
CC
=13V; Tj>T
TSD
; All Channels Open
400
t
DSENSE
Current sense delay
response
to 90% I
SENSE
(see note 2)
500
µ
s
5/17
VND830ASP
TRUTH TABLE (per channel)
ELECTRICAL TRANSIENT REQUIREMENTS
CONDITIONS
INPUT
OUTPUT
SENSE
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
V
SENSEH
Undervoltage
L
H
L
L
0
0
Overvoltage
L
H
L
L
0
0
Short circuit to GND
L
H
H
L
L
L
0
(T
j
<T
TSD
) 0
(T
j
>T
TSD
)
V
SENSEH
Short circuit to V
CC
L
H
H
H
0
< Nominal
Negative output voltage
clamp
L
L
0
ISO T/R 7637/1
Test Pulse
TEST LEVELS
I
II
III
IV
Delays and
Impedance
1
-25 V
-50 V
-75 V
-100 V
2 ms 10
2
+25 V
+50 V
+75 V
+100 V
0.2 ms 10
3a
-25 V
-50 V
-100 V
-150 V
0.1
µ
s 50
3b
+25 V
+50 V
+75 V
+100 V
0.1
µ
s 50
4
-4 V
-5 V
-6 V
-7 V
100 ms, 0.01
5
+26.5 V
+46.5 V
+66.5 V
+86.5 V
400 ms, 2
ISO T/R 7637/1
Test Pulse
TEST LEVELS RESULTS
I
II
III
IV
1
C
C
C
C
2
C
C
C
C
3a
C
C
C
C
3b
C
C
C
C
4
C
C
C
C
5
C
E
E
E
CLASS
CONTENTS
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
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