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1/38
February 2005
VN820-E / VN820B5-E
VN820PT-E / VN820SO-E / VN820SP-E
HIGH SIDE DRIVER
Rev. 3
Table 1. General Features
CMOS COMPATIBLE INPUT
ON STATE OPEN LOAD DETECTION
OFF STATE OPEN LOAD DETECTION
SHORTED LOAD PROTECTION
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
PROTECTION AGAINST LOSS OF GROUND
VERY LOW STAND-BY CURRENT
REVERSE BATTERY PROTECTION (*)
IN COMPLIANCE WITH THE 2002/95/EC
EUROPEAN DIRECTIVE
DESCRIPTION
The VN820-E, VN820SP-E, VN820B5-E,
VN820SO-E, VN820PT-E are monolithic devices
made by using
STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V
CC
pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table).
Figure 1. Package
Active current limitation combined with thermal
shutdown and automatic restart protect the device
against overload.
The device detects open load condition both is on
and off state. Output shorted to V
CC
is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Table 2. Order Codes
Note: (*) See application schematic at page 9.
Type
R
DS(on)
I
OUT
V
CC
VN820-E
VN820B5-E
VN820PT-E
VN820SO-E
VN820SP-E
40 m
9 A
36 V
PENTAWATT
P
2
PAK
1
10
PowerSO-10TM
SO-16L
PPAK
Package
Tube
Tape and Reel
PENTAWATT
VN820-E
-
PowerSO-10TM
VN820SP-E
VN820SPTR-E
P
2
PAK
VN820B5-E
VN820-B5TR-E
SO-16L
VN820SO-E
VN820SOTR-E
PPAK
VN820PT-E
VN820PTTR-E
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
2/38
Figure 2. Block Diagram
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
PowerSO-10 PENTAWATT P
2
PAK SO-16L PPAK
V
CC
DC Supply Voltage
41
V
- V
CC
Reverse DC Supply Voltage
- 0.3
V
- I
GND
DC Reverse Ground Pin Current
- 200
mA
I
OUT
DC Output Current
Internally Limited
A
- I
OUT
Reverse DC Output Current
- 9
A
I
IN
DC Input Current
+/- 10
mA
I
STAT
DC Status Current
+/- 10
mA
V
ESD
Electrostatic Discharge
(Human Body Model: R=1.5K
; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum Switching Energy (L=4mH; R
L
=0
;
V
bat
=13.5V; T
jstart
=150ºC; I
L
=13A)
481
481
mJ
E
MAX
Maximum Switching Energy (L=3.7mH;
R
L
=0
; V
bat
=13.5V; T
jstart
=150ºC; I
L
=13A)
438
mJ
E
MAX
Maximum Switching Energy (L=4.48mH;
R
L
=0
; V
bat
=13.5V; T
jstart
=150ºC; I
L
=13A)
526
mJ
P
tot
Power Dissipation T
C
=25°C
65.8
65.8
65.8
8.3
65.8
W
T
j
Junction Operating Temperature
Internally Limited
°C
T
c
Case Operating Temperature
- 40 to 150
°C
T
stg
Storage Temperature
- 55 to 150
°C
UNDERVOLTAGE
OVERTEMPERATURE
V
CC
GND
INPUT
OUTPUT
OVERVOLTAGE
CURRENT
LIMITER
LOGIC
DRIVER
Power
CLAMP
STATUS
V
CC
CLAMP
ON
STATE
OPENLOAD
OFF
STATE
OPENLOAD
AND
OUTPUT
SHORTED
TO
V
CC
DETECTION
DETECTION
DETECTION
DETECTION
DETECTION
3/38
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
Figure 3. Configuration Diagram (Top View) & Suggested Connections for Unused and N.C. Pins
Figure 4. Current and Voltage Conventions
Table 4. Thermal Data
(1)
When mounted on a standard single-sided FR-4 board with 0.5cm
2
of Cu (at least 35
µ
m thick).
(2)
When mounted on FR4 printed circuit board with 0.5cm
2
of Cu (at least 35
µ
thick) connected to all V
CC
pins.
(3)
When mounted on a standard single-sided FR-4 board with 6cm
2
of Cu (at least 35
µ
m thick).
(4)
When mounted on FR4 printed circuit board with 6cm
2
of Cu (at least 35
µ
thick) connected to all V
CC
pins.
Symbol
Parameter
Value
Unit
PowerSO-10 PENTAWATT P
2
PAK SO-16L PPAK
R
thj-case
Thermal Resistance Junction-case
Max
1.9
1.9
1.9
-
1.9
°C/W
R
thj-lead
Thermal Resistance Junction-lead
Max
-
-
-
15
-
°C/W
R
thj-amb
Thermal Resistance Junction-ambient Max
51.9
(1)
61.9
(1)
51.9
(1)
65
(2)
76.9
(1)
°C/W
R
thj-amb
Thermal Resistance Junction-ambient Max
37
(3)
-
37
(3)
48
(4)
45
(3)
°C/W
Connection / Pin Status
N.C.
Output
Input
Floating
X
X
X
X
To Ground
X
Through 10K
resistor
PPAK / P
2
PAK / PENTAWATT
1
2
3
4
5
6
7
8
9
10
11
OUTPUT
OUTPUT
OUTPUT
OUTPUT
GROUND
INPUT
STATUS
N.C.
N.C.
V
CC
PowerSO-10
V
CC
OUTPUT
OUTPUT
OUTPUT
OUTPUT
V
CC
OUTPUT
OUTPUT
V
CC
N.C.
N.C.
STATUS
INPUT
V
CC
GND
N.C.
1
8
9
16
SO-16L
OUTPUT
INPUT
I
S
I
IN
V
IN
V
CC
STATUS
I
STAT
V
STAT
GND
V
CC
I
OUT
V
OUT
I
GND
OUTPUT
V
F
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
4/38
ELECTRICAL CHARACTERISTICS (8V<V
CC
<36V; -40
°C
<T
j
<150
°C
unless otherwise specified)
Table 5. Power
Table 6. Switching (V
CC
=13V)
Table 7. Input Pin
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
CC
Operating Supply Voltage
5.5
13
36
V
V
USD
Undervoltage Shut-down
3
4
5.5
V
V
USDhyst
Undervoltage Shut-down
hysteresis
0.5
V
V
OV
Overvoltage Shut-down
36
V
R
ON
On State Resistance
I
OUT
=3A; T
j
=25°C; V
CC
>8V
I
OUT
=3A; V
CC
>8V
40
80
m
m
I
S
Supply Current
Off State; V
CC
=13V; V
IN
=V
OUT
=0V
Off State; V
CC
=13V; V
IN
=V
OUT
=0V;
T
j
=25
°C
On State; V
CC
=13V; V
IN
=5V; I
OUT
=0A
10
10
2
25
20
3.5
µ
A
µ
A
mA
I
L(off1)
Off State Output Current
V
IN
=V
OUT
=0V
0
50
µ
A
I
L(off2)
Off State Output Current
V
IN
=0V; V
OUT
=3.5V
-75
0
µ
A
I
L(off3)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=125°C
5
µ
A
I
L(off4)
Off State Output Current
V
IN
=V
OUT
=0V; Vcc=13V; T
j
=25°C
3
µ
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
R
L
=4.3
from V
IN
rising edge to
V
OUT
=1.3V
30
µ
s
t
d(off)
Turn-off Delay Time
R
L
=4.3
from V
IN
falling edge to
V
OUT
=11.7V
30
µ
s
dV
OUT
/
dt
(on)
Turn-on Voltage Slope
R
L
=4.3
from V
OUT
=1.3 to
V
OUT
=10.4V
See
relative
diagram
V/
µ
s
dV
OUT
/
dt
(off)
Turn-off Voltage Slope
R
L
=4.3
from V
OUT
=11.7 to
V
OUT
=1.3V
See
relative
diagram
V/
µ
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
IL
Input Low Level
1.25
V
I
IL
Low Level Input Current
V
IN
=1.25V
1
µ
A
V
IH
Input High Level
3.25
V
I
IH
High Level Input Current
V
IN
=3.25V
10
µ
A
V
I(hyst)
Input Hysteresis Voltage
0.5
V
V
ICL
Input Clamp Voltage
I
IN
=1mA
I
IN
=-1mA
6
6.8
-0.7
8
V
V
5/38
VN820-E / VN820SO-E / VN820SP-E / VN820B5-E / VN820PT-E
ELECTRICAL CHARACTERISTICS (continued)
Table 8. V
CC
- Output Diode
Table 9. Status Pin
Table 10. Protections (see note 1)
Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be
used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration
and number of activation cycles.
Table 11. Openload Detection
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
Forward on Voltage
-I
OUT
=2A; T
j
=150°C
0.6
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
STAT
Status Low Output Voltage I
STAT
=1.6mA
0.5
V
I
LSTAT
Status Leakage Current
Normal Operation V
STAT
=5V
10
µ
A
C
STAT
Status Pin Input
Capacitance
Normal Operation V
STAT
=5V
100
pF
V
SCL
Status Clamp Voltage
I
STAT
=1mA
I
STAT
=-1mA
6
6.8
-0.7
8
V
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
T
TSD
Shut-down Temperature
150
175
200
°C
T
R
Reset Temperature
135
°C
T
hyst
Thermal Hysteresis
7
15
°C
t
SDL
Status delay in overload
condition
T
j
>T
TSD
20
µ
s
I
lim
Current limitation
5.5V<V
CC
<36V
9
13
20
20
A
A
V
demag
Turn-off Output Clamp
Voltage
I
OUT
=3A; V
IN
=0V; L=6mH
V
CC
-41
V
CC
-48
V
CC
-55
V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I
OL
Openload ON State
Detection Threshold
V
IN
=5V 70
150
300
mA
t
DOL(on)
Openload ON State
Detection Delay
I
OUT
=0A 200
µ
s
V
OL
Openload OFF State
Voltage Detection
Threshold
V
IN
=0V
1.5
2.5
3.5
V
t
DOL(off)
Openload Detection Delay
at Turn Off
1000
µ
s
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