TV/LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .425 8LFL (M168)
epoxy sealed
.
170 - 230 MHz
.
28 VOLTS
.
CLASS AB PUSH PULL
.
DESIGNED FOR HIGH POWER LINEAR
OPERATION
.
HIGH SATURATED POWER CAPABILITY
.
GOLD METALLIZATION
.
DIFFUSED EMITTER BALLAST
RESISTORS
.
COMMON EMITTER CONFIGURATION
.
P
OUT
=
100 W MIN. WITH 11.0 dB GAIN
DESCRIPTION
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and trans-
posers.
PIN CONNECTION
BRANDING
TCC3100
ORDER CODE
SD1456
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
33
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
16
A
P
DISS
Power Dissipation
150
W
T
J
Junction Temperature
+200
°
C
T
STG
Storage Temperature
-
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance
1.2
°
C/W
SD1456 (TCC3100)
1. Collector
3. Base
2. Emitter
THERMAL DATA
November 1992
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
225 MHz
V
CE
=
28 V
I
C
=
2 x 100 mA
100
--
--
W
G
P
P
OUT
=
100 W
V
CE
=
28 V
I
C
=
2 x 100 mA
11
--
--
dB
c
P
OUT
=
100 W
V
CE
=
28 V
I
C
=
2 x 100 mA
70
--
--
%
C
OB
f
=
1 MHz
V
CB
=
28 V
--
60
--
pF
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
50mA
I
E
=
0mA
65
--
--
V
BV
CER
I
C
=
50mA
R
BE
=
15
60
--
--
V
BV
CEO
I
C
=
50mA
I
B
=
0mA
33
--
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
--
--
V
h
FE
V
CE
=
5V
I
C
=
500mA
20
--
150
--
DYNAMIC (Class AB)
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
BROADBAND POWER GAIN vs
FREQUENCY
DYNAMIC (Class A)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
*
f
=
225 MHz
V
CE
=
28 V
I
C
=
2 x 2.5 A
28
32
--
W
G
P
*
P
IN
=
1.1 W
V
CE
=
28 V
I
C
=
2 x 2.5 A
14
15
--
dB
IMD
3
*
P
IN
=
1.1 W
V
CE
=
28 V
P
REF
=
28 W
--
-
51
--
dB
N ote:
* Class A Perfor mance Char act eristi cs Indi cate Capabilit y but ar e not Tested.
IMD3 - 3 T one Meaur ement;
-
8,
-
7,
-
16dB r elative to P
REF
SD1456 (TCC3100)
2/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0168
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1456 (TCC3100)
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