STX715
NPN MEDIUM POWER TRANSISTOR
s
DEVICE SUITABLE FOR THROUGH-HOLE
PCB ASSEMBLY
APPLICATIONS
s
VOLTAGE REGULATION
s
RELAY DRIVER
s
GENERIC SWITCH
DECRIPTION
The STX715 is a NPN transistor manufactured
using Planar Technology resulting in rugged high
performance devices.
INTERNAL SCHEMATIC DIAGRAM
April 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
140
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
1.5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
2
A
I
B
Base Current
0.3
A
I
BM
Base Peak Current (t
p
< 5 ms)
0.6
A
P
tot
Total Dissipation at T
amb
= 25
o
C
0.9
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-92
®
Type
Marking
STX715
X715
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
44.6
139
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 140 V
500
µ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 80 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
100
µ
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
80
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 100 mA I
B
= 10 mA
I
C
= 1 A I
B
= 100 mA
0.25
0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 100 mA I
B
= 10 mA
I
C
= 1 A I
B
= 100 mA
1
1.1
V
V
h
FE
DC Current Gain
I
C
= 100 mA V
CE
= 2 V
I
C
= 500 mA V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
140
80
40
f
T
Transition Frequency
I
C
= 0.1 A V
CE
= 10 V
50
MHz
Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
STX715
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.195
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.095
0.105
e1
1.14
1.40
0.045
0.055
L
12.70
15.49
0.500
0.609
R
2.16
2.41
0.085
0.094
S1
1.14
1.52
0.045
0.059
W
0.41
0.56
0.016
0.022
V
4 degree
6 degree
4 degree
6 degree
TO-92 MECHANICAL DATA
STX715
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics Printed in Italy All Rights Reserved
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STX715
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