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April 2004
STW18NK60Z
N-CHANNEL 600V - 0.27
- 16A TO-247
Zener-Protected SuperMESHTM MOSFET
s
TYPICAL R
DS
(on) = 0.27
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODES
TYPE
V
DSS
R
DS(on)
I
D
Pw
STW18NK60Z
600 V
< 0.36
16 A
230 W
PART NUMBER
MARKING
PACKAGE
PACKAGING
STW18NK60Z
W18NK60Z
TO-247
TUBE
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW18NK60Z
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
16A, di/dt
200A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
± 30
V
I
D
Drain Current (continuous) at T
C
= 25°C
16
A
I
D
Drain Current (continuous) at T
C
= 100°C
10
A
I
DM
( )
Drain Current (pulsed)
64
A
P
TOT
Total Dissipation at T
C
= 25°C
230
W
Derating Factor
1.85
W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
Rthj-case
Thermal Resistance Junction-case Max
0.54
°C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
°C/W
°C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
16
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
400
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V
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STW18NK60Z
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±10
µA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 µA
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 8 A
0.27
0.36
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 8 A
13
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3540
370
80
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 420 V
220
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 8 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
34
25.5
82
47
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 16 A,
V
GS
= 10V
106
21
55
170
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 16 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 18 A, di/dt = 100A/µs
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
500
5.6
22.6
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A, di/dt = 100A/µs
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
650
8
24.2
ns
µC
A
STW18NK60Z
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Thermal Impedance
Transfer Characteristics
Transconductance
Output Characteristics
Safe Operating Area
Static Drain-source On Resistance
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STW18NK60Z
Normalized BVDSS vs Temperature
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
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