1/8
October 2002
.
STT3PF20V
P-CHANNEL 20V - 0.14
W
- 2.2A SOT23-6L
2.7-DRIVE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.14
W
(@4.5V)
s
TYPICAL R
DS
(on) = 0.20
W
(@2.7V)
s
ULTRA LOW THRESHOLD GATE DRIVE
(2.7V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
CELLULAR
MARKING
s
STP2
TYPE
V
DSS
R
DS(on)
I
D
STT3PF20V
!ÃW
1Ã!ÃWÃ5#$W
1Ã!$ÃWÃ5!&W
!!Ã6
SOT23-6L
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
20
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
W
)
20
V
V
GS
Gate- source Voltage
± 12
V
I
D
Drain Current (continuous) at T
C
= 25°C
2.2
A
I
D
Drain Current (continuous) at T
C
= 100°C
1.39
A
I
DM
(
)
Drain Current (pulsed)
8.8
A
P
tot
Total Dissipation at T
C
= 25°C
1.6
W
INTERNAL SCHEMATIC DIAGRAM
STT3PF20V
2/8
THERMAL DATA
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
T
j
T
stg
(*)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
78
-55 to 150
-55 to 150
°C/W
°C
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 12 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 µA
0.6
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V
I
D
= 1 A
V
GS
= 2.7 V
I
D
= 1 A
0.14
0.20
0.20
0.25
W
W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=15 V
I
D
= 1 A
4
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz, V
GS
= 0
315
87
17
pF
pF
pF
3/8
STT3PF20V
TXDU8CDIBÃPI
TXDU8CDIBÃPAA
TPVS8@Ã9S6DIÃ9DP9@
Qyrq)ÃQyrÃqhvÃ2Ã"ÃÃqÃppyrà $ÃÈ
)
QyrÃvquÃyvvrqÃiÃhsrÃrhvtÃhrh
Tiy
Qhhrr
UrÃ8qvv
Hv
U
Hh
Vv
q
UÃ9ryhÃUvr
SvrÃUvr
W
99
Ã2Ã ÃWÃ
D
9
Ã2Ã Ã6
S
B
2#& WÃ
W
BT
Ã2Ã#$ÃW
SrvvrÃGhqÃAvtrÃ"
"'
"
R
t
R
t
R
tq
UhyÃBhrÃ8uhtr
BhrTprÃ8uhtr
Bhr9hvÃ8uhtr
W
99
2Ã W ÃD
9
2Ã!6ÃW
BT
2#$W
"$
"#
'
#&
8
8
8
Tiy
Qhhrr
UrÃ8qvv
Hv
U
Hh
Vv
qss
s
UssÃ9ryhÃUvr
AhyyÃUvr
W
99
Ã2Ã ÃWÃ
D
9
Ã2Ã Ã6
S
B
2#&W,Ã
W
BTÃ
2Ã#$ÃW
SrvvrÃGhqÃAvtrÃ"
#$
Tiy
Qhhrr
UrÃ8qvv
Hv
U
Hh
Vv
D
T9
D
T9H
Ã
TprqhvÃ8r
TprqhvÃ8rÃyrq
!!
''
6
6
W
T9
Ã
AhqÃPÃWyhtr
D
T9
Ã2Ã!Ã6Ã
à W
BT
Ã2Ã
!
W
R
D
SSH
SrrrÃSrprÃUvr
SrrrÃSrprÃ8uhtr
SrrrÃSrprÃ8r
D
T9
Ã2Ã!Ã6
à qvqÃ2à 6
W
99
Ã2Ã ÃW
U
w
Ã2Ã $8
rrÃrÃpvpvÃAvtrÃ$
$
&$
8
6
@G@8USD86GÃ8C6S68U@SDTUD8TÃpvrq
ThsrÃPrhvtÃ6rh
UurhyÃDrqhpr
5/8
STT3PF20V
IhyvrqÃBhrÃUuruyqÃWyhtrÃÃUrrhr
IhyvrqÃÃSrvhprÃÃUrrhr
TprqhvÃ9vqrÃAhqÃ8uhhprvvp
IhyvrqÃ7rhxqÃWyhtrÃÃUrrhr
PDF 
ZIP