1/9
March 2005
STSJ18NF3LL
N-CHANNEL 30V - 0.016
- 18A PowerSO-8TM
LOW GATE CHARGE STripFETTM II POWER MOSFET
Rev.
1.0
Figure 1:Package
Table 1: General Features
TYPICAL R
DS
(on) = 0.016
@ 10V
TYPICAL Q
g
= 12.5 nC @ 4.5 V
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
SizeTM" strip-based process. This silicon, housed
in thermally improved SO-8TM package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower R
thj-c.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
TYPE
V
DSS
R
DS(on)
I
D
STSJ18NF3LL
30 V
<0.019
18 A
PowerSO-8TM
Figure 2: Internal Schematic Diagram
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2: Order Codes
Table 3: ABSOLUTE MAXIMUM RATING
(
·)
Pulse width limited by safe operating area.
(*) Value limited by wires bonding
SALES TYPE
MARKING
PACKAGE
PACKAGING
STSJ18NF3LL
18F3LL)
PowerSO-8
TAPE & REEL
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
± 16
V
I
D
Drain Current (continuous) at T
C
= 25°C (*)
18
A
I
D
Drain Current (continuous) at T
C
= 100°C(*)
18
A
I
DM
(
·)
Drain Current (pulsed)
72
A
P
tot
Total Dissipation at T
C
= 25°C
Total Dissipation at T
C
= 25°C (#)
70
3
W
W
STSJ18NF3LL
2/9
Table 4: THERMAL DATA
(*)
When Mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
>
10 sec.
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Table 6: ON
(*)
Table 7: DYNAMIC
Rthj-c
Rthj-amb
T
j
T
stg
Thermal Resistance Junction-case
(*)
Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
Max
Max
1.8
41.7
150
-55 to 150
°C/W
°C/W
°C
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 16 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 µA
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 9 A
V
GS
= 4.5 V
I
D
= 9 A
0.016
0.019
0.019
0.022
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=15 V
I
D
= 9 A
17
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
800
250
60
pF
pF
pF
3/9
STSJ18NF3LL
Table 8: SWITCHING ON
Table 9: SWITCHING OFF
Table 10: SOURCE DRAIN DIODE
(
·
)
Pulse width limited by safe operating area.
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 9 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 15)
18
32
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V I
D
=18A V
GS
=4.5V
(see test circuit, Figure 16)
12.5
3.2
4.5
17
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 9 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 17)
21
11
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current (pulsed)
18
72
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 18 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 18 A
di/dt = 100A/µs
V
DD
= 15 V
T
j
= 150°C
(see test circuit, Figure 17)
23
17
1.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
STSJ18NF3LL
4/9
Figure 5: Output Characteristics
Figure 6: Transfer Characteristics
Figure 7: Transconductance
Figure 8: Static Drain-source On Resistance
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Capacitance Variations
5/9
STSJ18NF3LL
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
.
.
PDF 
ZIP