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May 2002
.
STS5NS150
N-CHANNEL 150V - 0.075
- 5A SO-8
LOW GATE CHARGE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.075
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STS5NS150
150 V
<0.1
5 A
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
·)
Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
150
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
150
V
V
GS
Gate- source Voltage
± 20
V
I
D
Drain Current (continuous) at T
C
= 25°C
5
A
I
D
Drain Current (continuous) at T
C
= 100°C
3
A
I
DM
(
·)
Drain Current (pulsed)
20
A
P
tot
Total Dissipation at T
C
= 25°C
2.5
W
Derating Factor
0.02
W/°C
T
stg
Storage Temperature
-55 to 150
°C
T
j
Operating Junction Temperature
STS5NS150
2/8
THERMAL DATA
(*)
When mounted on FR-4 board with 0.5 in2 pad of Cu.
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-amb
(*)
Thermal Resistance Junction-ambient
Max
50
°C/W
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
500
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
150
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 µA
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 2.5 A
0.075
0.1
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 4 V
5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
990
175
110
pF
pF
pF
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STS5NS150
Safe Operating Area
Thermal Impedance
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
·)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 75 V
I
D
= 2.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 1)
12
2.8
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 120V I
D
= 5A V
GS
= 10V
(see test circuit, Figure 2)
65
5.5
2.7
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 75 V
I
D
= 2.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 1)
50
12
ns
ns
t
r(Voff)
t
f
t
c
Turn-off Delay Time
Fall Time
Cross-over Time
V
clamp
= 120 V
I
D
= 5 A
R
G
= 4.7
,
V
GS
= 10 V
(Inductive Load, Figure 5)
11
17
36
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 5 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A
di/dt = 100A/µs
V
DD
= 30 V
T
j
= 150°C
(see test circuit, Figure 3)
150
712
9.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STS5NS150
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STS5NS150
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
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