STS3DNF30L
N - CHANNEL 30V - 0.055
- 3.5A - SO-8
PowerMESH
TM
MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.055
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFAC MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature
Size
TM
" strip-based process. The resulting transi-
stor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
S
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate-source Voltage
±
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
Single Operation
Drain Current (continuous) at T
c
= 100
o
C
Single Operation
3.5
2.2
A
A
I
DM
(
·
)
Drain Current (pulsed)
14
A
P
tot
Total Dissipation at T
c
= 25
o
C Dual Operation
Total Dissipation at T
c
= 25
o
C Single Operation
2
1.6
W
W
(
·
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS3DNF30L
30 V
< 0.065
3.5 A
December 1998
SO-8
1/5
THERMAL DATA
R
thj-amb
T
J
T
stg
*Thermal Resistance Junction-ambient Singe Operation Max
Thermal Resistance Junction-ambient Dual Operation Max
Maximum Lead Temperature For Soldering Purpose
Storage Temperature
78
62.5
150
-55 to 150
o
C/W
o
C/W
o
C
o
C
(*) Mounted on FR-4 board (t
10 sec)
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
µ
A V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
10
µ
A
µ
A
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
µ
A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 1.75 A
V
GS
= 4.5 V I
D
= 1.75 A
0.055
0.06
0.065
0.09
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )max
V
GS
= 10 V
3.5
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )max
I
D
= 6 A
6
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
420
62
20
550
80
30
pF
pF
pF
STS3DNF30L
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on )
t
r
Turn-on Time
Rise Time
V
DD
= 15 V I
D
= 2 A
R
G
= 4.7
V
GS
= 4.5 V
13
30
17
40
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V I
D
=4 A V
GS
= 4.5 V
8
3.2
2.6
11
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V I
D
= 4 A
R
G
= 4.7
V
GS
= 4.5 V
5
9
20
7
12
26
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current
(pulsed)
3.5
14
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 3.5 A V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A di/dt = 100 A/
µ
s
V
DD
= 15 V T
j
= 150
o
C
23
0.134
1.2
ns
µ
C
A
(
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
·
) Pulse width limited by safe operating area
STS3DNF30L
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
STS3DNF30L
4/5
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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