1/7
TARGET DATA
July 2003
STP9NK65Z
STP9NK65ZFP
N-CHANNEL 650V - 1
- 7A TO-220/TO-220FP
Zener-Protected SuperMESHTMPower MOSFET
s
TYPICAL R
DS
(on) = 1.0
s
EXTREMELY HIGH dv/dt CAPABILITY
s
IMPROVED ESD CAPABILITY
s
100% AVALANCHE RATED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP9NK65Z
STP9NK65ZFP
650 V
650 V
< 1.2
< 1.2
7 A
7 A
110 W
30 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP9NK65Z
P9NK65Z
TO-220
TUBE
STP9NK65ZFP
P9NK65ZFP
TO-220FP
TUBE
TO-220FP
1
2
3
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
STP9NK65 - STP9NK65ZFP
2/7
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
TBD, di/dt
TBD, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
STP9NK65Z
STP9NK65ZFP
V
DS
Drain-source Voltage (V
GS
= 0)
650
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
650
V
V
GS
Gate- source Voltage
± 30
V
I
D
Drain Current (continuous) at T
C
= 25°C
7
7 (*)
A
I
D
Drain Current (continuous) at T
C
= 100°C
4.4
4.4 (*)
A
I
DM
( )
Drain Current (pulsed)
28
28 (*)
A
P
TOT
Total Dissipation at T
C
= 25°C
110
30
W
Derating Factor
0.88
0.24
W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
3500
KV
dv/dt (1)
Peak Diode Recovery voltage slope
TBD
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.14
4.2
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
TBD
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V
3/7
STP9NK65 - STP9NK65ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
650
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±10
µA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100µA
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 3 A
1.0
1.2
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 8 V
,
I
D
= 3 A
TBD
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
TBD
TBD
TBD
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
TBD
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 325 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 520V, I
D
= 6 A,
V
GS
= 10V
TBD
TBD
TBD
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 325 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
TBD
TBD
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 520 V, I
D
= 6 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
TBD
TBD
TBD
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
7
28
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6 A, di/dt = 100A/µs
V
DD
= 35V, T
j
= 150°C
(see test circuit, Figure 5)
TBD
TBD
TBD
ns
µC
A
STP9NK65 - STP9NK65ZFP
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Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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STP9NK65 - STP9NK65ZFP
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP9NK65 - STP9NK65ZFP
6/7
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
7/7
STP9NK65 - STP9NK65ZFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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