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November 2004
STGP10NB60S
STGP10NB60SFP- STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK
PowerMESHTM IGBT
Table 1: General Features
s
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
s
VERY LOW ON-VOLTAGE DROP( V
cesat
)
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
TM
IGBTs, with outstanding performances.
The suffix "S" identifies a family optimized achieve
minimum on-voltage drop for low frequency appli-
cations (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
s
MOTOR CONTROL
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25°C
I
C
@100°C
STGP10NB60S
STGP10NB60SFP
STGB10NB60S
600 V
600 V
600 V
< 1.7 V
< 1.7 V
< 1.7 V
10 A
10 A
10 A
1
2
3
1
2
3
1
3
TO-220FP
TO-220
D²PAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP10NB60S
GP10NB60S
TO-220
TUBE
STGP10NB60SFP
GP10NB60SFP
TO-220FP
TUBE
STGB10NB60S
GB10NB60S
D²PAK
TAPE & REEL
Rev.1
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
2/13
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
Symbol
Parameter
Value
Unit
TO-220/D²PAK
TO-220FP
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
± 20
V
I
C
Collector Current (continuous) at 25°C
20
A
I
C
Collector Current (continuous) at 100°C
10
A
I
CM
(1)
Collector Current (pulsed)
80
A
P
TOT
Total Dissipation at T
C
= 25°C
80
25
W
Derating Factor
0.64
0.20
W/°C
V
ISO
Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)
--
2500
V
T
stg
Storage Temperature
55 to 150
°C
T
j
Operating Junction Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
TO-220
D²PAK
1.56
°C/W
TO-220FP
5.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
62.5
°C/W
T
L
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter
Breakdown Voltage
I
C
= 250 µA, V
GE
= 0
600
V
V
BR(ECS)
Emitter-Collector
Breakdown Voltage
I
C
= 1mA, V
GE
= 0
20
V
I
CES
Collector cut-off
(V
GE
= 0)
V
GE
= Max Rating, Tc=25°C
V
CE
= Max Rating, Tc=125°C
10
100
µA
µA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20 V , V
CE
= 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 µA
2.5
5
V
V
CE(SAT)
Collector-Emitter
Saturation Voltage
V
GE
=4.5 V, I
C
= 5 A,
V
GE
=4.5 V, I
C
= 10 A,
V
GE
=4.5 V, I
C
= 10 A, Tj= 125°C
1.15
1.35
1.25
1.7
V
V
V
3/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail ( Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
CE
= 25 V
,
I
C
= 10 A
7
S
C
ies
Input Capacitance
V
CE
= 25 V, f= 1 MHz, V
GE
= 0
610
pF
C
oes
Output Capacitance
65
pF
C
res
Reverse Transfer
Capacitance
12
pF
Q
g
Total Gate Charge
V
CE
= 400 V, I
C
= 10 A,
V
GE
= 15 V
(see Figure 20)
33
nC
I
CL
Latching Current
V
clamp
= 480 V
,
Tj = 150°C
R
G
= 1 k
20
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Current Rise Time
V
CC
= 480 V, I
C
= 10 A R
G
=1K
V
GE
= 15 V
(see Figure 18)
0.7
0.46
µs
µs
(di/dt)
on
Eon
(1)
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 10 A R
G
=1K
V
GE
=15 V,Tj = 125°C
8
0.6
A/µs
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-Over Time
V
cc
= 480 V, I
C
= 10 A,
R
G
= 10
, V
GE
= 15 V
T
J
= 25 °C
(see Figure 18)
2.2
µs
t
r
(V
off
)
Off Voltage Rise Time
1.2
µs
t
f
Current Fall Time
1.2
µs
E
off
(**)
Turn-off Switching Loss
5.0
mJ
t
c
Cross-Over Time
V
cc
= 480 V, I
C
= 10 A,
R
G
= 10
, V
GE
= 15 V
T
J
= 125 °C
(see Figure 18)
3.8
µs
t
r
(V
off
)
Off Voltage Rise Time
1.2
µs
t
f
Current Fall Time
1.9
µs
E
off
(**)
Turn-off Switching Loss
8.0
mJ
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
4/13
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Gate Thereshold vs Temperature
5/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 9: Capacitance Variations
Figure 10: Off Losses vs Gate Resistance
Figure 11: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 13: Off Losses vs Temperature
Figure 14: Off Losses vs Collector Current
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
6/13
Figure 15: Thermal Impedance For TO-220/
D²PAK
Figure 16: Turn-Off SOA
Figure 17: Thermal Impedance For TO-220FP
7/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 18: Test Circuit for Inductive Load
Switching
Figure 19: Switching Waveforms
Figure 20: Gate Charge Test Circuit
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
8/13
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
9/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
10/13
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.32
4.57
0.178
0.180
A1
0.00
0.25
0.00
0.009
b
0.71
0.91
0.028
0.350
b2
1.15
1.40
0.045
0.055
c
0.46
0.61
0.018
0.024
c2
1.22
1.40
0.048
0.055
D
8.89
9.02
9.40
0.350
0.355
0.370
D1
8.01
0.315
E
10.04
10.28
0.395
0.404
e
2.54
0.010
H
13.10
13.70
0.515
0.540
L
1.30
1.70
0.051
0.067
L1
1.15
1.39
0.045
0.054
L2
1.27
1.77
0.050
0.069
L4
2.70
3.10
0.106
0.122
V2
0°
8°
0°
8°
TO-263 (D
2
PAK) MECHANICAL DATA
11/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
12/13
Table 10: Revision History
Date
Revision
Description of Changes
10-Nov-2004
1
First release
13/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
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