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January 2002
STE110NS20FD
N-CHANNEL 200V - 0.022
- 110A ISOTOP
MESH OVERLAYTM Power MOSFET
(1)I
SD
110A, di/dt
200A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX
n
TYPICAL R
DS
(on) = 0.022
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
GATE CHARGE MINIMIZED
n
± 20V GATE TO SOURCE VOLTAGE RATING
n
LOW INTRINSIC CAPACITANCE
n
FAST BODY-DRAIN DIODE:LOW t
rr
, Q
rr
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, gives the lowest RDS(ON) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLY (SMPS)
n
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(·)Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE110NS20FD
200V
< 0.024
110 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
±20
V
I
D
Drain Current (continuos) at T
C
= 25°C
110
A
I
D
Drain Current (continuos) at T
C
= 100°C
69
A
I
DM
(
l
)
Drain Current (pulsed)
440
A
P
TOT
Total Dissipation at T
C
= 25°C
500
W
Derating Factor
4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
25
V/ns
V
ISO
Insulation Winthstand Voltage (AC-RMS)
2500
V
T
stg
Storage Temperature
65 to 150
°C
T
j
Max. Operating Junction Temperature
150
°C
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
STE110NS20FD
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
0.25
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
110
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
750
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
µA
V
DS
= Max Rating, T
C
= 125 °C
100
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 50A
0.022
0.024
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 50A
30
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
7900
pF
C
oss
Output Capacitance
1500
pF
C
rss
Reverse Transfer
Capacitance
460
pF
3/8
STE110NS20FD
Safe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 100V, I
D
= 50A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
40
ns
t
r
Rise Time
130
ns
Q
g
Total Gate Charge
V
DD
= 100V, I
D
= 100A,
V
GS
= 10V
360
504
nC
Q
gs
Gate-Source Charge
35
nC
Q
gd
Gate-Drain Charge
135
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 100V, I
D
= 100A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
245
ns
t
f
Fall Time
140
ns
t
c
Cross-over Time
220
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
110
A
I
SDM
(2)
Source-drain Current (pulsed)
440
A
V
SD
(1)
Forward On Voltage
I
SD
= 100A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 100A, di/dt = 100A/µs,
V
DD
= 160V, T
j
= 150°C
(see test circuit, Figure 5)
225
ns
Q
rr
Reverse Recovery Charge
1.35
µC
I
RRM
Reverse Recovery Current
12
A
Thermal Impedance
STE110NS20FD
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Capacitance Variations
Transconductance
Static Drain-source On Resistance
Transfer Characteristics
Output Characteristics
Gate Charge vs Gate-source Voltage
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STE110NS20FD
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
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