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PRELIMINARY DATA
June 2003
STD7NS20
STD7NS20-1
N-CHANNEL 200V - 0.35
- 7A DPAK / IPAK
MESH OVERLAYTM MOSFET
s
TYPICAL R
DS
(on) = 0.35
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(·)Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD7NS20
STD7NS20-1
200 V
200 V
< 0.40
< 0.40
7 A
7 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
200
V
V
GS
Gate- source Voltage
± 20
V
I
D
Drain Current (continuos) at T
C
= 25°C
7
A
I
D
Drain Current (continuos) at T
C
= 100°C
4.4
A
I
DM
( )
Drain Current (pulsed)
28
A
P
TOT
Total Dissipation at T
C
= 25°C
45
W
Derating Factor
0.37
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
T
stg
Storage Temperature
65 to 150
°C
T
j
Max. Operating Junction Temperature
150
°C
(1) I
SD
7A, di/dt
300 A/
µ
s, V
DD
V
(BR)DSS
, Tj
T
jMAX
INTERNAL SCHEMATIC DIAGRAM
1
3
TO-252
DPAK
3
2
1
IPAK
TO-251
STD7NS20 / STD7NS20-1
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
2.7
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
275
°C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
60
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
200
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
µA
V
DS
= Max Rating, T
C
= 125 °C
10
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 3.5 A
0.35
0.40
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3.5 A
4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
540
pF
C
oss
Output Capacitance
90
pF
C
rss
Reverse Transfer
Capacitance
35
pF
3/8
STD7NS20 / STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 100 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
10
ns
t
r
Rise Time
15
ns
Q
g
Total Gate Charge
V
DD
= 160V, I
D
= 18 A,
V
GS
= 10V
31
45
nC
Q
gs
Gate-Source Charge
7.5
nC
Q
gd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 160 V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
12
12
25
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
7
A
I
SDM
(2)
Source-drain Current (pulsed)
28
A
V
SD
(1)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 7 A, di/dt = 100A/µs
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
170
ns
Q
rr
Reverse Recovery Charge
0.95
µ
C
I
RRM
Reverse Recovery Current
11
A
STD7NS20 / STD7NS20-1
4/8
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/8
STD7NS20 / STD7NS20-1
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
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