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PRELIMINARY DATA
May 2000
STD5NM60
N-CHANNEL 600V - 0.8
- 5A DPAK
MDmesh
TM
Power MOSFET
s
TYPICAL R
DS
(on) = 0.8
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
s
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh
TM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESH
TM
horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition's products.
APPLICATIONS
The MDmesh
TM
family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(
·
)Pulse width limite d by safe operating area
(1)I
SD
<5A, di/dt<200A/
µ
s, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STD5NM60
600V
<0.9
5 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
±
30
V
I
D
Drain Current (continuos) at T
C
= 25
°
C
5
A
I
D
Drain Current (continuos) at T
C
= 100
°
C
3.1
A
I
DM
(
q
)
Drain Current (pulsed)
20
A
P
TOT
Total Dissipation at T
C
= 25
°
C
50
W
Derating Factor
0.4
W/
°
C
dv/dt(1)
Peak Diode Recovery voltage slope
6
V/ns
T
stg
Storage Temperature
65 to 150
°
C
T
j
Max. Operating Junction Temperature
150
°
C
1
3
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
STD5NM60
2/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case Max
2.5
°
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
°
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
400
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
µ
A
V
DS
= Max Rating, T
C
= 125
°
C
10
µ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30V
±
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
µ
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 2.5A
0.8
0.9
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
5
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 2.5A
2.4
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
412
pF
C
oss
Output Capacitance
94
pF
C
rss
Reverse Transfer
Capacitance
10
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
3/6
STD5NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 300V, I
D
= 2.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
16
ns
t
r
9
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 5A,
V
GS
= 10V
13
nC
Q
gs
Gate-Source Charge
3
nC
Q
gd
Gate-Drain Charge
11
nC
Symbol
Parameter
Test Condit ions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480V, I
D
= 5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
20
ns
t
f
Fall Time
29
ns
t
c
Cross-over Time
30
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
5
A
I
SDM
(2)
Source-drain Current (pulsed)
20
A
V
SD
(1)
Forward On Voltage
I
SD
= 5A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 5A, di/dt = 100A/
µ
s, V
DD
= 100V, T
j
= 150
°
C
(see test circuit, Figure 5)
300
ns
Q
rr
Reverse Recovery Charge
1.8
µ
C
I
RRM
Reverse Recovery Current
12
A
STD5NM60
4/6
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/6
STD5NM60
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
==
D
L2
L4
13
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
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