1/9
May 2002
STD25NF10
N-CHANNEL 100V - 0.033
- 25A DPAK
LOW GATE CHARGE STripFETTM POWER MOSFET
(1) I
SD
35A, di/dt
300A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 12.5A, V
DD
= 50V
s
TYPICAL R
DS
(on) = 0.033
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
(*) Current Limited by Package
TYPE
V
DSS
R
DS(on)
I
D
STD25NF10
100 V
< 0.038
25 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
100
V
V
GS
Gate- source Voltage
± 20
V
I
D
(*)
Drain Current (continuos) at T
C
= 25°C
25
A
I
D
Drain Current (continuos) at T
C
= 100°C
21
A
I
DM
(
l
)
Drain Current (pulsed)
100
A
P
TOT
Total Dissipation at T
C
= 25°C
100
W
Derating Factor
0.67
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
13
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
480
mJ
T
stg
Storage Temperature
55 to 175
°C
T
j
Operating Junction Temperature
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
STD25NF10
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
100
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
µA
V
DS
= Max Rating, T
C
= 125 °C
10
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ±20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 12.5 A
0.033
0.038
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 12.5 A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1550
pF
C
oss
Output Capacitance
220
pF
C
rss
Reverse Transfer
Capacitance
95
pF
3/9
STD25NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 50V, I
D
= 12.5 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
17
ns
t
r
Rise Time
60
ns
Q
g
Total Gate Charge
V
DD
= 80V, I
D
=25A,V
GS
= 10V
55
nC
Q
gs
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
20
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 50V, I
D
= 12.5 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
60
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
25
A
I
SDM
(1)
Source-drain Current (pulsed)
100
A
V
SD
(2)
Forward On Voltage
I
SD
= 25 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 25 A, di/dt = 100A/µs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
160
ns
nC
A
Thermal Impedence
Safe Operating Area
STD25NF10
4/9
Gate Charge vs Gate-source Voltage
Capacitance Variations
Transconductance
Static Drain-source On Resistance
Output Characteristics
Transfer Characteristics
5/9
STD25NF10
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
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