1/10
June 2004
STD20NF06
N-CHANNEL 60V - 0.032
- 24A DPAK
STripFETTM II POWER MOSFET
Rev.3.0.6
TYPICAL R
DS
(on) = 0.032
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
HIGH SWITCHING APPLICATIONS
TYPE
V
DSS
R
DS(on)
I
D
STD20NF06
60 V
< 0.040
24 A
1
3
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
·)
Pulse width limited by safe operating area.
(1) I
SD
24A, di/dt
100A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
=10 A, V
DD
= 45V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD20NF06
D20NF06
TO-252
TAPE & REEL
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate- source Voltage
± 20
V
I
D
Drain Current (continuous) at T
C
= 25°C
24
A
I
D
Drain Current (continuous) at T
C
= 100°C
17
A
I
DM
(
·)
Drain Current (pulsed)
96
A
P
tot
Total Dissipation at T
C
= 25°C
60
W
Derating Factor
0.4
W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope
10
V/ns
E
AS(2)
Single Pulse Avalanche Energy
300
mJ
T
stg
Storage Temperature
-55 to 175
°C
T
j
Operating Junction Temperature
STD20NF06
2/10
TAB.1 THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
TAB.2 OFF
TAB.3 ON
(*)
TAB.4 DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Max
Max
2.5
100
275
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 µA
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 12 A
0.032
0.040
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=
25 V
I
D
= 12 A
15
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
690
170
68
pF
pF
pF
3/10
STD20NF06
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
·)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 30 V
I
D
= 10 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
10
30
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V I
D
= 20 A V
GS
= 10 V
23
5
7.5
31
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 30 V
I
D
= 10 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
30
8
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current (pulsed)
24
96
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 24 A V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A
di/dt = 100A/µs
V
DD
= 30 V
T
j
= 150°C
(see test circuit, Figure 5)
65
150
4.6
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STD20NF06
4/10
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/10
STD20NF06
Normalized Gate Threshold Voltage vs Temperature
Normalized
on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
.
PDF 
ZIP