UHF TV LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .425 4LFL (M119)
hermetically sealed
.
470-860 MHz
.
26.5 VOLTS
.
GOLD METALLIZATION
.
P
OUT
=
20.0W MIN. WITH 9.5 dB GAIN
.
INTERNAL INPUT MATCHING
.
DIFFUSED EMITTER BALLAST
RESISTORS
DESCRIPTION
The SD4010 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors. The SD4010 is intended for use in linear
applications up to 1GHz, including UHF television
transmitters, transposers and cellular base sta-
tions.
PIN CONNECTION
BRANDING
SUTV200
ORDER CODE
SD4010
ABSOLUTE MAXIMUM RATINGS (Tcase
=
25
°
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
60.0
V
V
CES
Collector-Emitter Voltage
60.0
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current (Maximum)
11.0
A
P
DISS
Power Dissipation
88.8
W
T
J
Junction Temperature
+200
°
C
T
STG
Storage Temperature
-
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance
1.9
°
C/W
SD4010
1. Collector
3. Emitter
2. Base
THERMAL DATA
November 1992
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
860MHz
V
CE
=
26.5V
P
IN
=
2.2W
20.0
28.0
--
W
G
P
f
=
860MHz
V
CE
=
26.5V
P
OUT
=
20W
9.5
10.5
--
dB
IMD
3
P
SYNC
=
20W
V
CE
=
26.5V
(note 1)
--
-
48
-
46
dBc
IP
3
V
CB
=
26.5V
P
OUT
=
20W PEP
(note 2)
--
55
--
dBm
C
OB
f
=
860MHz
V
CB
=
26.5V
(note 3)
--
25
36
pF
Load*
Mismatch
f
=
860MHz
V
CE
=
26.5V
P
OUT
=
20W
3:1
10:1
--
VSWR
I
CQ
=
I
C
=
2.7A (1.35A per Si de)
*VSWR tested for a minimum of 3:1 SWR at all phase angles.
Note 1:
Three Tone IMD Testing (CCIR)
f
1
=
860.0MHz/
-
8dB ref. to P
SYNC
- Visual
f
2
=
863.5MHz/
-
16dB ref. to P
SYNC
- Color Subcarrier
f
3
=
864.5MHz/
-
7dB ref. to P
SYNC
- Aural
STATIC
Symbol
Test Condi tions
Val ue
Unit
Min .
Typ.
Max.
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.0
4.0
--
V
BV
CES
I
C
=
50mA
V
BE
=
0V
60.0
85.0
--
V
BV
CEO
I
C
=
50mA
I
B
=
0mA
28.0
30.0
--
V
I
CEO
V
CE
=
26.5V
I
E
=
0mA
--
--
5
mA
h
FE
V
CE
=
5V
I
C
=
3A
25
50
80
--
Tested Per Side
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT & POWER GAIN vs
TOTAL COLLECTOR CURRENT
N ote 2: IP
3
Calcul ated Based on Two-T one
IMD Testing:
f
1
=
900.0 MHz/
-
6dB ref. to P
OU T
f
2
=
900.1 MHz/
-
6dB ref. to P
OU T
IMD
3
(Typ) <
-
36dBc
N ote 3: Test ed Per Si de
SD4010
2/5
TEST CIRCUIT SCHEMATIC
Balun 1, 2 : 50
Coaxial Cable,
/4 @ 860 MHz
C1, C4,
C11, C16 : 100
µ
F, 50V Electrolytic
C2, C5,
C12, C15 : 10
µ
F, 35V Tantalum
C3, C6, C7 C8,
C19, C20 : 75 pF Ceramic Chip, ATC B
C9, C18
: 0.4 - 2.5 pF Variable, JOHANSON Giga-trim
C10
: 2pF Ceramic Chip, ATC B
C17
: 5pF Ceramic Chip, ATC B
L1, L2 : 7 Turns, 0.12" I.D., #22 AWG (1:1)
L3, L4 : 5 Turns, 0.12" I.D., #22 AWG (1:1)
See Photomaster for Microstrip Lines
Board
Material:
ROGERS Ultra-Lam Er
=
2.55, Height
=
0.030",
2 oz. Cu.
TYPICAL PERFORMANCE (cont'd)
INTERMODULATION DISTORTION vs POWER OUTPUT
SD4010
3/5
PHOTOMASTER OF TEST CIRCUIT
SD4010
4/5
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0119
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD4010
5/5
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