SD2923
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
GOLD METALLIZATION
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION
s
Pout = 300W MIN. WITH 16 dB GAIN @ 30
MHz
s
THERMALLY ENHANCED PACKAGING
DESCRIPTION
The SD2923 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
150 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
125
V
V
DGR
Drain-Gate Voltage (R
GS
= 1M
)
125
V
V
G S
Gat e-Source Volt age
±
20
V
I
D
Drain Current
40
A
P
DI SS
Power Dissipation
648
W
T
j
Max. O perating Junction Temperature
200
o
C
T
STG
Storage T emperat ure
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resistance
0.27
0.15
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M177
epoxy sealed
®
ORDER CODE
BRANDING
SD2923
SD2923
1. Drain
4. Source
2. Source
5. Source
3. Gate
1/8
Capacitance vs Drain-Source Voltage
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
Gate-Source Voltages vs Case Temperature
TYPICAL PERFORMANCE
SD2923
3/8
Output Power vs Input Power
Output Power vs Input Power
Output Power vs Voltage Supply
Output Power vs Gate Voltage
Power Gain vs Output Power
Efficiency vs Output Power
TYPICAL PERFORMANCE
SD2923
4/8
PDF 
ZIP
