1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 SQ. 2LFL (M186)
epoxy sealed
.
1.65 GHz
.
28 VOLTS
.
EFFICIENCY 40% MIN.
.
CLASS C OPERATION
.
COMMON BASE
.
P
OUT
=
32 W MIN. WITH 9 dB GAIN
DESCRIPTION
The SD1898 is a 28 V Class C silicon NPN tran-
sistor designed for INMARSAT and other 1.65 GHz
SATCOM applications. A gold metallized emitter-
ballasted die geometry is employed providing high
gain and efficiency while ensuring long term re-
liability and ruggedness under severe operating
conditions. SD1898 is packaged in a cost-effective
epoxy sealed housing.
PIN CONNECTION
BRANDING
1898
ORDER CODE
SD1898
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
45
V
V
CEO
Collector-Emitter Voltage
15
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
7.8
A
P
DISS
Power Dissipation
87.5
W
T
J
Junction Temperature
+200
°
C
T
STG
Storage Temperature
-
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
°
C/W
SD1898
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1.65 GHz
P
IN
=
4.0 W
V
CE
=
28 V
32
--
--
W
G
P
f
=
1.65 GHz
P
IN
=
4.0 W
V
CE
=
28 V
9.0
--
--
dB
c
f
=
1.65 GHz
P
IN
=
4.0 W
V
CE
=
28 V
40
--
--
%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
45
--
--
V
BV
CEO
I
C
=
10mA
I
B
=
0mA
12
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
h
FE
V
CE
=
5V
I
C
=
2A
15
--
150
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
EFFICIENCY vs POWER INPUT
SD1898
2/4
TEST CIRCUIT
C1, C2 : .4 - 2.5pF Johanson Capacitor
C3
: 15,000pF EMI Filter
C4
: 1000pF Chip Capacitor
L1, L2 : 5 Turns Choke Diameter Wire .025" I.D. .125"
Substrate: Er
=
10.2, Height .050", 1 Oz. Copper
All Dimensions in Inches.
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
1550 MHz
6.6 + j 15.0
5.6
-
j 2.5
1600 MHz
8.3 + j 14.5
4.7
-
j 1.9
1650 MHz
12.0 + j 12.0
4.1
-
j 1.4
SD1898
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0186
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1898
4/4
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