October 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 2LFL (S058)
epoxy sealed
.
RUGGEDIZED VSWR
:1
.
INPUT MATCHING
.
LOW THERMAL RESISTANCE
.
CLASS A OPERATION
.
P
OUT
=
0.6 W MIN. WITH 10.8 dB GAIN
DESCRIPTION
The MSC1000M is a Class A, common emitter
transistor with an emitter ballasted Matrix geo-
metry specifically designed for DME/IFF driver ap-
plications.
This device is capable of withstanding a
:1 load
VSWR at any phase angle under full rated condi-
tions. Low RF thermal resistance and semi-auto-
matic wire bonding techniques ensure high relia-
bility and product consistency.
The MSC1000M is housed in the IMPACTM pack-
age with internal input matching.
PIN CONNECTION
BRANDING
1000M
ORDER CODE
MSC1000M
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(See Safe Area)
--
W
I
C
Device Current*
300
mA
V
CE
Collector-Emitter Bias Voltage*
20
V
T
J
Junction Temperature (Pulsed RF Operation)
200
°
C
T
STG
Storage Temperature
-
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance*
35
°
C/W
*Applies only to rated RF amplifier operation
MSC1000M
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150 MHz P
IN
=
50 mW
V
CE
=
18 V
0.6
0.85
--
W
G
P
f
=
1025 -- 1150 MHz P
IN
=
50 mW
V
CE
=
18 V
10.8
12.3
--
dB
Note:
Pulse Width
=
10
µ
Sec
I
C
=
120mA
Duty Cycle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
1mA
I
E
=
0mA
50
--
--
V
BV
EBO
I
E
=
1mA
I
C
=
0mA
3.5
--
--
V
BV
CEO
IC
=
5mA
I
B
=
0mA
20
--
--
V
I
CES
V
CE
=
28V
--
--
1.0
mA
h
FE
V
CE
=
5V
I
C
=
100mA
15
--
120
--
DYNAMIC
TYPICAL PERFORMANCE
BROADBAND POWER AMPLIFIER
NARROWBAND POWER
OUTPUT vs FREQUENCY
MAXIMUM OPERATING AREA for
FORWARD BIAS OPERATION
MSC1000M
2/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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MSC1000M
5/5
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