IRF820
N - CHANNEL 500V - 2.5
- 2.5 A - TO-220
PowerMESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 2.5
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company's consolidated strip layout-based MESH
OVERLAY
TM
process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
®
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Volt age (V
GS
= 0)
500
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
500
V
V
G S
Gat e-source Voltage
±
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
2.5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.6
A
I
DM
(
·
)
Drain Current (pulsed)
10
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
80
W
Derating F act or
0.64
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
3.5
V/ ns
T
stg
Storage T emperat ure
-65 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
(
·
) Pulse width limited by safe operating area
(
1
) I
SD
2.5 A, di/dt
50 A/
µ
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
TYPE
V
DSS
R
DS(on)
I
D
I RF820
500 V
< 3
2.5 A
1
2
3
TO-220
1/8
THERMAL DATA
R
t hj-ca se
Rthj -am b
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.56
62. 5
0.5
300
o
C/W
oC/ W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max)
2.5
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
210
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
µ
A
V
GS
= 0
500
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
µ
A
µ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
±
20 V
±
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
µ
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 1.5 A
2.5
3
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
2. 5
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 1.5 A
1. 2
1.9
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
360
61
6
pF
pF
pF
IRF820
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 2.1 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
11
8
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
= 2.1 A V
G S
= 10 V
12
5
5
24
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 3.8 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
8
5
14
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current
(pulsed)
2.5
15
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 2. 5 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.8 A
di/dt = 100 A/
µ
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
245
980
8
ns
µ
C
A
(
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
·
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
IRF820
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
IRF820
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRF820
5/8
PDF 
ZIP