BUF410A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF410A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The
BUF
series
is
designed
for
use
in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
March 1996
ABSOLUTE MAXIMUM RATINGS
Symbo l
Parameter
Value
Uni t
V
CEV
Collect or-Emitter Voltage (V
BE
= -1.5 V)
1000
V
V
CEO
Collect or-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collect or Current
15
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
30
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
< 5 ms)
4.5
A
P
tot
Total Dissipat ion at T
c
= 25
o
C
125
W
T
st g
St orage Temperature
-65 t o 150
o
C
T
j
Max Operation Junction Temperature
150
o
C
1
2
3
TO-218
1/6
THERMAL DATA
R
thj -ca se
Thermal Resistance Junction-Case
Max
1
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
I
CER
Collector Cut -off
Current (R
BE
= 100
)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.2
1
mA
mA
I
CEV
Collector Cut -off
Current (I
B
= 0)
V
CE
= V
CEV
V
BE
= -1. 5 V
V
CE
= V
CEV
V
BE
= -1. 5 V T
c
=100
o
C
0.2
1
mA
mA
I
EBO
Emitter Cut- off Current
(I
C
= 0)
V
BE
= 5 V
1
mA
V
CEO (sus)
Collector-Emitt er
Sustaining Voltage
I
C
= 200 mA
L = 25 mH
450
V
V
EBO
Emitter Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitt er
Sat uration Voltage
I
C
= 5 A
I
B
= 0.5 A
I
C
= 5 A
I
B
= 0.5 A
T
c
=100
o
C
I
C
=10 A
I
B
= 2 A
I
C
=10 A
I
B
= 2 A
T
c
=100
o
C
0. 8
0. 5
2.8
2
V
V
V
V
V
BE(sat )
Base-Emitter
Sat uration Voltage
I
C
= 5 A
I
B
= 0.5 A
I
C
= 5 A
I
B
= 0.5 A
T
c
=100
o
C
I
C
=10 A
I
B
= 2 A
I
C
=10 A
I
B
= 2 A
T
c
=100
o
C
0. 9
1. 1
1.5
1.5
V
V
V
V
di
c
/ dt
Rat e of rise on-stat e
Collector Current
V
CC
= 300 V R
C
= 0
t
p
= 3
µ
s
I
B1
= 0.75 A T
j
=25
o
C
I
B1
= 0.75 A T
j
=100
o
C
I
B1
= 3 A
T
j
=100
o
C
45
100
60
A
/µ
s
A
/µ
s
A
/µ
s
V
CE
(3
µ
s)
Collector-Emitt er
Dynamic Voltage
V
CC
= 300 V
R
C
= 60
I
B1
= 0.75 A
T
j
=25
o
C
I
B1
= 0.75 A
T
j
=100
o
C
2. 1
8
V
V
V
CE
(5
µ
s)
Collector-Emitt er
Dynamic Voltage
V
CC
= 300 V
R
C
= 60
I
B1
= 0.75 A
T
j
=25
o
C
I
B1
= 0.75 A
T
j
=100
o
C
1. 1
4
V
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 1.2
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
0. 8
0.05
0.08
µ
s
µ
s
µ
s
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 1.2
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
T
j
=100
o
C
1.8
0.1
0.18
µ
s
µ
s
µ
s
V
CEW
Maximum Collector
Emitter Volt age
wit hout Snubber
IC = 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 1.2
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.3
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
1. 5
0.04
0.07
µ
s
µ
s
µ
s
BUF410A
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.3
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
T
j
=100
o
C
3
0.15
0.25
µ
s
µ
s
µ
s
V
CEW
Maximum Collector
Emitter Volt age
wit hout Snubber
IC = 5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.3
V
clam p
= 400 V
I
B1
= 0.5 A
L = 0.5 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= -5 V
R
BB
=1. 2
V
clam p
= 400 V
I
B1
= 2 A
L = 0.25 mH
1. 9
0.06
0.12
µ
s
µ
s
µ
s
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
=1. 2
V
clam p
= 400 V
I
B1
= 2 A
L = 0.25 mH
T
j
=100
o
C
3.2
0.12
0.3
µ
s
µ
s
µ
s
V
CEW
Maximum Collector
Emitter Volt age
wit hout Snubber
ICW off = 15 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 1.2
L = 0.17 mH
I
B1
= 3 A
T
j
=125
o
C
400
V
Turn-on Switching Test Circuit
Turn-off Switching Test Circuit
Turn-on SwitchingTest Waveforms.
BUF410A
3/6
Turn-off SwitchingTest Waveforms (inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
BUF410A
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
Ø
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
¯
L3
L2
L5
1
2
3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUF410A
5/6
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