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Part Number AM1011-400

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September 1992
L-BAND AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
400 W MIN. WITH 8.0 dB GAIN
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1011-400 is supplied in the BIGPAC
TM
Her-
metic Metal/Ceramic package Input/Output match-
ing structures.
PIN CONNECTION
BRANDING
1011-400
ORDER CODE
AM1011-400
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
100
°
C)
880
W
I
C
Device Current*
24
A
V
CC
Collector-Supply Voltage*
55
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°
C
T
STG
Storage Temperature
-
65 to +200
°
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.17
°
C/W
*Applies only to rated RF amplifier operation
AM1011-400
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditions
Value
Uni t
Mi n.
Typ.
Max.
P
OUT
f
=
1090MHz
P
IN
=
63W
V
CC
=
50V
400
450
--
W
c
f
=
1090MHz
P
IN
=
63W
V
CC
=
50V
45
50
--
%
G
P
f
=
1090MHz
P
IN
=
63W
V
CC
=
50V
8.0
8.5
--
dB
N ote:
Pul se Widt h
=
32
µ
Sec
Duty Cycle
=
2%
STATIC
Symbol
Test Condi tions
Valu e
Unit
Mi n.
Typ.
Max.
BV
CBO
I
C
=
50mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
15mA
I
C
=
0mA
3.5
--
--
V
BV
CER
IC
=
50mA
R
BE
=
10
65
--
--
V
I
CES
V
BE
=
50V
V
CE
=
0V
--
--
30
mA
h
FE
V
CE
=
5V
I
C
=
5A
10
--
--
--
DYNAMIC
AM1011-400
2/6
MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE
0
50
100
150
200
250
300
350
400
450
500
30
40
50
60
70
80
10
20
30
40
50
60
70
80
90
TYPICAL NARROWBAND
POWER AMPLIFIER
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
POWER INPUT (WATTS)
C
O
L
L
E
C
T
O
R
E
F
F
.
%
POWER INPUT (WATTS)
Freq
=
1090 MHz
V
CC
=
50 V
PW
=
32
µ
sec
DC
=
2%
T
A
=
25
°
C
TYPICAL NARROWBAND
POWER AMPLIFIER
C
P
OUT
0
10
20
30
40
50
60
70
80
90
100
30
40
50
60
70
80
30
35
40
45
50
TYPICAL RELATIVE OUTPUT & COLLEC-
TOR EFFICIENCY vs COLLECTOR VOLTAGE
P
O
W
E
R
O
U
T
P
U
T
W
A
T
T
S
COLLECTOR VOLTAGE (VOLTS)
C
O
L
L
E
C
T
O
R
E
F
F
.
%
COLLECTOR VOLTAGE (VOLTS)
Freq
=
1090 MHz
P
IN
=
60 W
PW
=
32
µ
sec
DC
=
2%
T
A
=
25
°
C
TYPICAL RELATIVE OUTPUT
POWER & COLLECTOR EFFICIENCY
vs COLLECTOR VOLTAGE
C
P
OUT
PULSE WIDTH (
µ
sec)
JC
°
C/W
T
C
< 45
°
C
PW
100
µ
sec; V
CC
=
50V
PW > 100
µ
sec; V
CC
< 50V
DC
=
2%
DC
=
10%
DC
=
4%
TYPICAL PERFORMANCE
AM1011-400
3/6
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
P
IN
=
63 W
V
CC
=
+50 V
Z
O
*
=
50
*Normalized Impedance
P
IN
=
63 W
V
CC
=
+50 V
Z
O
*
=
50
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
L
=
1025 MHz
2.4 + j 3.2
1.4
-
j 2.2
M
=
1090 MHz
3.8 + j 2.5
1.6
-
j 1.6
H
=
1150 MHz
2.3 + j 1.3
1.2
-
j 1.1
AM1011-400
4/6
PACKAGE MECHANICAL DATA
TEST CIRCUIT
.185
Ref.: Dwg. No.: 101-002568
AM1011-400
5/6