September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
90 W MIN. WITH 13 dB GAIN
.
BANDWIDTH 225 MHz
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0 912-08 0 is ho used in the unique
AMPACTM Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-80
ORDER CODE
AM0912-080
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
P
DISS
Power Dissipation*
(T
C
100°C)
220
W
I
C
Device Current*
7.0
A
V
CC
Collector-Supply Voltage*
50
V
T
J
Junction Temperature (Pulsed RF Operation)
250
°
C
T
STG
Storage Temperature
-
65 to +200
°
C
R
TH(j-c)
Junction-Case Thermal Resistance*
0.80
°
C/W
*Applies only to rated RF amplifier operation
AM0912-080
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/3
ELECTRICAL SPECIFICATIONS (T
case
=
25
°
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
960 -- 1215MHz
P
IN
=
13W
V
CC
=
50V
90
100
--
W
c
f
=
960 -- 1215MHz
P
IN
=
13W
V
CC
=
50V
38
44
--
%
G
P
f
=
960 -- 1215MHz
P
IN
=
13W
V
CC
=
50V
8.4
--
--
dB
Note:
Pulse Width
=
10
µ
Sec
Duty Cycle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
40mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.0
--
--
V
BV
CER
IC
=
40mA
R
BE
=
10
65
--
--
V
I
CBO
V
CB
=
50V
--
--
12
mA
h
FE
V
CE
=
5V
I
C
=
2A
20
--
120
--
DYNAMIC
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
2
O
3
C1,C2 : 0.3 - 3.5 pF Johanson Capacitors, or Equiv.
C3
: 100 pF Chip Capacitor
C4,C6 : 1500 pF RF Feedthru
C5
: 100 MF, Electrolytic 50V
L1,L2 : No. 32 Wire, 4 Turn .062 I.D.
RBE
: 0 - 1.0 Ohm
.120
Ref. Dwg. No. J-313120
AM0912-080
2/3
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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AM0912-080
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