Description
The SLD1324ZT is a gain-guided, high-power
laser diode with 1W red visible output. The flat
package with built-in TE cooler is adopted and fine
tuning of wavelength is possible by controlling the
laser chip temperature.
Features
· High power
Recommended optical power output :1.0W
· Emitting line width :200µm
· Flat package with built-in photodiode,
TE cooler and thermistor
Applications
· Medical use
· Solid state laser excitation
Structure
AlGaInP quantum well structure laser diode
Absolute Maximum Ratings (Tth = 25°C)
· Optical power output
P
O
1.1
W
· Reverse voltage
V
R
LD
2
V
P
D
15
V
· Operating temperature (Tth)
Topr
10 to +30
°C
· Storage temperature
Tstg
40 to +85
°C
· Operating current of TE cooler
I
T
4.0
A
Pin Configuration (Top View)
1
SLD1324ZT
E94724-PP
High-Power Density 1W Laser Diode
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
M-272
Equivalent Circuit
1 2 3
4 5 6
7 8 9
10 11 12
TH
LD
PD
T.E. Cooler
1
12
No.
Function
No.
Function
1
2
3
4
5
6
T. E. Cooler (negative)
T. E. Cooler (negative)
Thermister
Thermister
LD (anode)
LD (anode)
7
8
9
10
11
12
LD (cathode)
LD (cathode)
PD (cathode)
PD (anode)
T. E. Cooler (positive)
T. E. Cooler (positive)
For the availability of this product, please contact the sales office.
2
SLD1324ZT
Optical and Electrical Characteristics
(Tth = Thermistor temperature, Tth = 25°C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
(F.W.H.M)
Positional accuracy
Differential efficiency
Thermistor resistance
Perpendicular
Parallel
Position
Angle
Ith
Iop
Vop
Imon
//
X,
Y
D
Rth
P
O
= 1.0W
P
O
= 1.0W
P
O
= 1.0W
P
O
= 1.0W, V
R
= 10V
P
O
= 1.0W
P
O
= 1.0W
P
O
= 1.0W
P
O
= 1.0W
P
O
= 1.0W
Tth = 25°C
685
0.15
15
4
0.3
0.9
2.1
2.2
695
1.2
24
11
0.9
10
1.5
3.0
3.0
705
3.0
35
15
±100
±3
1.5
A
A
V
nm
mA
degree
degree
µm
degree
W/A
k
Marking
4
1
1
Production factory
Lot No.
Categories are not specified by marking.
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
.
Unlike gas lasers, since laser diode beams are
divergent, uncollimated laser diode beams are
fairly safe at a laser diode. For observing laser
beams, ALWAYS use safety goggles that block
infrared rays. Usage of IR scopes, IR cameras
and fluorescent plates is also recommended for
monitoring laser beams safely.
Safety goggles for protection from laser beam
IR fluorescent plate
Optical
material
Lens
Laser diode
Optical board
Optical power output control device
Temperature control device
3
SLD1324ZT
10
0
10
20
30
1.5
1
0.5
Ith-Threshold current [mA]
Threshold current vs. Temperature characteristics
Tth-Thermistor temperature [°C]
Slope efficiency vs. Temperature
characteristics
0
0.5
1.0
1.5
2.0
1.2
1.0
0.8
0.6
0.4
0.2
0
Po-Optical power output [W]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
0
0.5
1.0
1.5
2.0
Imon-Monitor Current [mA]
IF Forward current [A]
Tth = 30°C
10
IF
Imon
Tth = 3025 15 0 10°C
30
60
10
0
10
20
30
1
0
D Slope efficiency [W/A]
Tth-Thermistor temperature [°C]
0.5
Relative radiant intensity
10
0
10
20
700
660
p-Wavelength [nm]
Temperature dependence of
wavelength
Tth-Thermistor temperature [°C]
690
680
670
P
O
= 1W
60
40
20
0
60
Power dependence of far field pattern
(Perpendicular to junction)
Angle [degree]
40
20
Tth = 25°C
P
O
= 1.0W
0.8W
0.6W
0.4W
0.2W
60
40
20
0
Relative radiant intensity
Angle [degree]
40
20
P
O
= 1.0W
0.8W
0.6W
0.4W
0.2W
Tth = 25°C
Power dependence of far field pattern
(Parallel to junction)
4
SLD1324ZT
15
10
5
0
40
30
10
0
20
Q-Absorbed heat [W]
1
T-Temperature difference [°C]
0
20
40
60
80
100
T: Tc Tth
Tth: Thermistor temperature
Tc : Case temperature
Tc = 32°C
T
VS
V
I
T
= 4A
3A
2A
T
VS
Q 4A
3A
2A
V
T
-Pin voltage [V]
15
10
5
0
40
30
10
0
20
Q-Absorbed heat [W]
2
T-Temperature difference [°C]
0
20
40
60
80
100
Tth = 25°C
3A
2A
T
VS
V I
T
= 4A
3A
2A
V
T
-Pin voltage [V]
T
VS
Q 4A
50
5
1
10
Rth-Thermistor resistance [k
]
10
Thermistor characteristics
Tth-Thermistor temperature [°C]
0
10 20 30 40 50 60 70
TE cooler characteristics
5
SLD1324ZT
Power dependence of Spectrum (Tth = 25°C)
1.00
0.00
688
698
Po = 0.4W
1.00
0.00
688
698
1.00
0.00
698
Po = 0.6W
688
Po = 0.2W
1.00
0.00
688
698
Po = 0.8W
1.00
0.00
688
698
Po = 1.0W
Relative radiant intensity
Wavelength [nm]
Relative radiant intensity
Relative radiant intensity
Relative radiant intensity
Relative radiant intensity
Wavelength [nm]
Wavelength [nm]
Wavelength [nm]
Wavelength [nm]
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