Description
The SLD131UL is a low-power consumption and
low-noise laser diode developed for portable CDs.
Features
· Low current consumption I
OP
: 20mA (P
O
= 2.5mW)
· Supports single power supply.
· Low noise
Applications
· Portable CDs
Structure
· GaAlAs double hetero laser diode
· PIN photodiode to monitor laser beam output
Absolute Maximum Ratings (Tc = 25°C)
· Optical power output
P
O
4
mW
· Reverse voltage
V
R
LD
2
V
PD
15
V
· Operating temperature
Topr
10 to +60 °C
· Storage temperature
Tstg
40 to +85 °C
1
SLD131UL
E94615-PK
GaAlAs Laser Diode
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
3
LD
1
2
PD
COMMON
2
1
3
Bottom View
1. LD anode
2. PD anode
3. COMMON
Connection Diagram
Pin Configuration
M-259
2
SLD131UL
0°
7°
7°
S
L
S
R
Power
//
S
R
=
S
L
S
R
S
L
+ S
R
Electrical and Optical Characteristics (T
C
= 25°C)
T
C
: Case temperature
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Rediation
angle
Positional
accuracy
Differential efficiency
Astigmatism
Dark current of PD
capacitance of PD
Ith
Iop
Vop
p
Im
//
S
R
X,
Y,
Z
D
A
S
I
D
C
T
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
V
R
= 5V
Po = 2.5mW
Po = 2.5mW
Po = 2.5mW
| Z // Z
|
V
R
= 5V
V
R
= 5V, f = 1kHz
1.7
760
0.08
20
8
0.2
16
20
1.9
790
0.11
39
13
0.6
28
30
2.5
810
0.6
45
25
25
±150
±4
0.9
15
150
30
mA
mA
V
nm
mA
degree
degree
%
µm
degree
mW/mA
µm
nA
pF
Perpendicular
Parallel
Asymmetry
Position
Angle
3
SLD131UL
Example of Representative Characteristics
IF [mA]
Imon [mA]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
35
P
O
Optical power output [mV]
I
F
Forward current [mA]
0
0.1
0.2
0.3
30°C
Tc = 10°C
Optical power output vs. Forward current characteristics
10
100
20
0
20
40
60
80
Ith Threshold current [mA]
Tc Case temperature [°C]
20
40
60
80
Threshold current vs. Temperature characteristics
0.0
0.2
0.4
0.6
0.8
1.0
20
0
20
40
60
80
D
Differential efficiency [mW/mA]
Differential efficiency vs. Temperature characteristics
Po = 2.5mW
40
30
20
10
0
10
20
30
40
Angle [ ° ]
Relative radiant intensity
Far field pattern (FFP)
//
Po = 2.5mW, Tc = 25°C
0.25
0
0.25
1.0
0.0
1.0
Current [mA]
Voltage [V]
PIN diode voltage and current characteristics
Po = 2.5mW, Tc = 25°C
0.1
1.0
20
0
20
40
60
80
Im Monitor current [mA]
Tc Case temperature [°C]
0.2
0.4
0.6
0.8
Po = 2.5mW
Monitor current vs. Temperature characteristics
Tc = 10°C
60°C
20°C
40°C
50°C
60°C
Tc Case temperature [°C]
4
SLD131UL
40
40
30
20
10
0
10
20
30
Relative radiant intensity
Angle [ ° ]
Power dependence of far field pattern
(Parallel to junction)
Po = 1mW
Po = 2.5mW
Po = 4mW
Tc = 25°C
0
40
30
20
10
0
10
20
30
40
Relative radiant intensity
Angle [ ° ]
Power dependence of far field pattern
(Perpendicular to junction)
Tc = 25°C
Po = 4mW
Po = 2.5mW
Po = 1mW
40
30
20
10
0
10
20
30
40
Po = 2.5mW
40
30
20
10
0
10
20
30
40
Tc = 50°C
Tc = 40°C
Tc = 30°C
Tc = 20°C
Tc = 10°C
Po = 2.5mW
Tc = 60°C
Tc = 50°C
Tc = 40°C
Tc = 30°C
Tc = 20°C
Tc = 10°C
Tc = 60°C
Temperature dependence of far field pattern
(Parallel to junction)
Temperature dependence of far field pattern
(Perpendicular to junction)
Relative radiant intensity
Relative radiant intensity
Angle [ ° ]
Angle [ ° ]
5
SLD131UL
Power dependence of oscillating spectrum
Relative radiant intensity
Wavelength [nm]
790
795
800
780
785
Po = 4mW
Po = 2.5mW
Po = 1mW
Tc = 25°C
6
SLD131UL
Temperature dependence of oscillating spectrum
Relative radiant intensity
Wavelength [nm]
790
795
800
785
P
O
= 2.5mW
805
Tc = 60°C
Tc = 40°C
Tc = 20°C
7
SLD131UL
Package Outline
Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
M-259
1.0
0.4
0.5
90°
1
2
3
Reference Slot
5.6
0
0.05
4.4 MAX
3.8 MAX
0.6
0.25
0.5 MIN
1.26
3.1 MAX
1.2 ±
0.1
6.5
1
3
2
3
0.45
PCD
2.0
LD Chip & Photo Diode
Optical
Distance = 1.35 ± 0.15
Reference Plane
Window Glass
0.8
30°
M-259
0.3g
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