650nm Pulsation Red Laser Diode
Description
The SLD1134VL is a pulsation red laser diode
designed for DVD systems.
Features
· Low noise
· Standard package (
5.6mm)
Application
DVD
Structure
· AlGaInP quantum well-structure laser diode
· PIN photo diode for optical power output monitor
Recommended Optical Power Output
4mW
Absolute Maximum Ratings (Tc = 25°C)
· Optical power output
Po
5
mW
· Reverse voltage
V
R
LD
2
V
PD
20
V
· Operating temperature
Topr
10 to +70 °C
· Storage temperature
Tstg
40 to +85 °C
1
E98Y11-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD1134VL
M-274
Pin Configuration
1
2
3
COMMON
LD
PD
2
Bottom View
1
3
1. LD Anode
2. PD Anode
3. Common
Connection Diagram
2
SLD1134VL
Electrical and Optical Characteristics
Tc: Case temperature
Handling Precautions
(1) Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 4W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm
2
. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS
use safety goggles that block infrared rays.
Usage of IR scopes, IR cameras and
fluorescent plates is also recommended for
monitoring laser beams safely.
AP
C
ATC
Safety goggles for
protection from laser beam
IR fluorescent
plate
Optical
material
Optical power output control device
Temperature control device
Lens
Laser diode
Optical board
(2) Prevention of surge current and electrostatic discharge
Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light
emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that
the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser
diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by
a human body. Be great careful about excess current and electrostatic discharge.
Unit
Max.
Typ.
Min.
Conditions
Symbol
Ith
Iop1
Iop2
1
Vop
p
//
X,
Y,
Z
//
D
A
S
Imon
Item
640
25
7
0.15
0.05
65
75
2.3
655
35
8.5
0.4
10
0.1
Perpendicular
Parallel
Position
Angle
Threshold current
Operating current
Operating voltage
Wavelength
Differential efficiency
Astigmatism
Monitor current
80
90
120
2.8
660
40
12
±80
±2
±3
0.7
0.25
mA
mA
mA
V
nm
degree
degree
µm
degree
degree
mW/mA
µm
mA
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
P
O
= 4mW
VR = 5V
Positional
accuracy
Radiation
Angle
1
Tc = 70°C
3
SLD1134VL
Example of Representative Characteristics
Threshold current vs. Temperature characteristics
Tc Case temperature [
°
C]
0
20
40
60
80
20
0
20
40
60
80
20
200
100
10
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
I
F
Forward current [mA]
0
20
Imon Monitor current [mA]
40
0
0.2
60
80
100
5
Tc = 0
Imon
25 60 70
°
C
Tc = 0 25 60 70
°
C
4
3
2
1
0
P
o
O
p
t
i
c
a
l
o
u
t
p
u
t
[
m
W
]
Monitor current vs. Temperature characteristics
Tc Case temperature [
°
C]
0
0.1
0.2
I
m
o
n
M
o
n
i
t
o
r
c
u
r
r
e
n
t
[
m
A
]
Po = 4mW
40
20
0
20
40
Far field pattern (FFP)
Angle [degree]
0
R
e
l
a
t
i
v
e
r
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
Po = 4mW
Tc = 25
°
C
//
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