Description
The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the
SLD104U, this device attains even lower power consumption levels.
Features
· Low power consumption
· Single power supply
· Low noise
· Microminiaturized package (
5.6mm)
Structure
· AlGaAs double hetero-type laser diode
· PIN photo diode for laser optical power output monitor
Absolute Maximum Ratings (Tc = 25°C)
· Optical power output
Po
5
mW
· Reverse voltage
V
R
LD
2
V
PD
15
V
· Operating temperature Topr
10 to +60
°C
· Storage temperature
Tstg
40 to +85
°C
Connection Diagram
AlGaAs Laser Diode
1
E89418B81-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SLD104AU
Pin Configuration
1
2
3
COMMON
LD
PD
2
Bottom View
1
3
1. LD anode
2. PD anode
3. COMMON
2
SLD104AU
Electrical and Optical Characteristics (Tc = 25°C)
Tc: Case temperature
Unit
Max.
Typ.
Min.
Condition
Symbol
Ith
Iop
Vop
Im
//
S
R
1
X,
Y,
Z
D
A
S
S/N
I
D
C
T
Item
1.7
760
0.08
20
9
0.2
45
52
1.9
780
0.15
32
17
0.45
88
Perpendicular
Parallel
Asymmetry
Position
Angle
Threshold current
Operating current
Operating voltage
Wavelength
Monitor current
Radiation angle
(F. W. H. M.
)
Differential efficiency
Astigmatism
Signal to noise ratio
Dark current of PD
Capacitance of PD
60
70
2.5
800
0.4
45
25
20
±150
±3
0.7
15
150
30
mA
mA
V
nm
mA
degree
degree
%
µm
degree
mW/mA
µm
dB
nA
pF
P
O
= 3mW
P
O
= 3mW
P
O
= 3mW
P
O
= 3mW,
V
R
= 5V
P
O
= 3mW
P
O
= 3mW
P
O
= 3mW
| Z// Z
|
f
C
= 7.5MHz
f = 30kHz
P
O
= 4mW
V
R
= 5V
V
R
= 5V, f = 1MHz
P
O
= 3mW
Positional
accuracy
Power
S
L
S
R
0
//
7
°
7
°
1
S
R
=
| S
L
S
R
|
S
L
+ S
R
F. W. H. M. : Full Width at Half Maximum
3
SLD104AU
Example of Representative Characteristics
1.0
1.0 [V]
0
0.25 [mA]
0.25
PIN diode current-voltage characteristics
Tc = 25
°
C
P
O
= 3mW
V
I
0
20
40
60
80
100
1
4
3
2
5
Optical power output vs. Forward current characteristics
I
F
Forward current [mA]
P
O
O
p
t
i
c
a
l
p
o
w
e
r
o
u
t
p
u
t
[
m
W
]
Tc = 25
°
C
Tc = 50
°
C
40
20
0
20
40
0
0.5
1.0
Far field pattern (FFP)
Angle [degree]
R
a
d
i
a
n
t
i
n
t
e
n
s
i
t
y
(
o
p
t
i
o
n
a
l
s
c
a
l
e
)
780
781
782
783
784
Relative light intensity vs. Wavelength characteristics
Wavelength [nm]
R
e
l
a
t
i
v
e
l
i
g
h
t
i
n
t
e
n
s
i
t
y
P
O
= 5mW
778
779
780
781
782
Relative light intensity vs. Waveform characteristics
Wavelength [nm]
R
e
l
a
t
i
v
e
l
i
g
h
t
i
n
t
e
n
s
i
t
y
P
O
= 3mW
//
P
O
= 3mW
10
0
25
50
100
10
50
45
100
Temperature characteristic of threshold current
T
C
Case temperature [
°
C]
I
t
h
T
h
r
e
s
h
o
l
d
c
u
r
r
e
n
t
[
m
A
]
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