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Part Number 1T404A

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Variable Capacitance Diode
Description
The 1T404A is a variable capacitance diode designed
for electronic tuning of wide-band CATV tuners using
a super-small-miniature flat package (SSVC).
Features
· Super-small-miniature flat package
· Low series resistance
0.75
Max. (f = 470MHz)
· Large capacitance ratio
11.5 Typ.
(C
2
/C
25
)
· Small leakage current
10nA Max. (V
R
= 28V)
· Capacitance deviation in a matching group within 2%
Applications
Electronic tuning of wide-band CATV tuners
Structure
Silicon epitaxial planar type diode
Absolute Maximum Ratings (Ta = 25°C)
· Reverse voltage
V
R
34
V
· Operating temperature
Topr
­20 to +75
°C
· Storage temperature
Tstg
­65 to +150
°C
­ 1 ­
E99805-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
1T404A
M-290
Electrical Characteristics
(Ta = 25°C)
Reverse voltage
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a matching group
V
R
I
R
C
2
C
25
C
2
/C
25
C
25
/C
28
rs
C
I
R
= 1µA
V
R
= 28V
V
R
= 2V, f = 1MHz
V
R
= 25V, f = 1MHz
C
D
= 14pF, f = 470MHz
V
R
= 2 to 25V, f = 1MHz
34.0
29.5
2.60
11.0
1.03
11.5
10.0
33.5
2.90
0.75
2.0
V
nA
pF
pF
%
Unit
Max.
Typ.
Min.
Conditions
Symbol
Item
­ 2 ­
1T404A
1
2
5
10
20
50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R
­ Reverse voltage [V]
C

­

D
i
o
d
e

c
a
p
a
c
i
t
a
n
c
e

[
p
F
]
Ta = 25°C
100
1
10
100
Reverse current vs. Ambient temperature
­20
0
20
40
60
80
Ta ­ Ambient temperature [°C]
I
R

­

R
e
v
e
r
s
e

c
u
r
r
e
n
t

[
p
A
]
V
R
= 28V
0.60
0.80
Forward voltage vs. Ambient temperature
­20
0
20
40
60
80
Ta ­ Ambient temperature [°C]
V
F

­

F
o
r
w
a
r
d

v
o
l
t
a
g
e

[
V
]
I
F
= 1mA
0.70
0.50
Ta ­ Ambient temperature [°C]
40
50
Reverse voltage vs. Ambient temperature
­20
0
20
40
60
80
V
R

­

R
e
v
e
r
s
e

v
o
l
t
a
g
e

[
V
]
45
35
I
R
= 10µA
­ 3 ­
1T404A
1.01
1.03
Diode capacitance vs. Ambient temperature
­20
0
20
40
60
80
Ta ­ Ambient current [°C]
C

(
T
a
)
/
C

(
2
5
°
C
)

­

D
i
o
d
e

c
a
p
a
c
i
t
a
n
c
e
V
R
= 1V
1.02
1.00
0.99
0.98
V
R
= 2V
V
R
= 7V
V
R
= 25V
V
R
= 15V
1
100
Reverse current vs. Reverse voltage
1
3
10
30
V
R
­ Reverse voltage [V]
I
R

­

R
e
v
e
r
s
e

c
u
r
r
e
n
t

[
p
A
]
10
0.1
Ta = 80°C
Ta = 60°C
Ta = 25°C
1000
Temperature coefficient of diode capacitance
1
2
5
10
V
R
­ Reverse voltage [V]
T
e
m
p
e
r
a
t
u
r
e

c
o
e
f
f
i
c
i
e
n
t

[
p
p
m
/
°
C
]
50
20
50
500
200
100
­ 4 ­
1T404A
Package Outline
Unit: mm
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
EPOXY RESIN
SOLDER PLATING
COPPER
b
1
.
7

±

0
.
1
1
0
°

M
A
X
c
0.8 ± 0.1
10° MAX
0
.
7

±

0
.
1
c
b
0.11 ± 0.005
0.3 ± 0.025
BASE METAL
0.11 ­
0.01
0.3 ­
0.02
WITH PLATING
+ 0.05
+ 0.05
M-290
0
.
2

±

0
.
0
5
0.002g
M-290
1
.
3

±

0
.
1
M
A
0
.
2
A
Marking
S4
2
1: Cathode
2: Anode
1