Semiconductor Group
1
PNP Silicon Switching Transistor
SXT 2907 A
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SXT 2907 A
Q68000-A8300
2F
SOT-89
B
C
E
1
2
3
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
60
V
Collector-base voltage
V
CB0
60
Collector current
I
C
600
mA
Total power dissipation,
T
S
= 120 °C
P
tot
1
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
2)
R
th JA
90
K/W
Junction - soldering point
R
th JS
30
Emitter-base voltage
V
EB0
5
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
q
High current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
5.91
Semiconductor Group
2
SXT 2907 A
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
V
Collector-emitter breakdown voltage
I
C
= 10 mA
V
(BR)CE0
60
Collector-base breakdown voltage
I
C
= 10
µ
A
V
(BR)CB0
60
Emitter-base breakdown voltage
I
E
= 10
µ
A
V
(BR)EB0
5
nA
µ
A
Collector-base cutoff current
V
CB
= 60 V,
I
E
= 0
V
CB
= 60 V,
I
E
= 0,
T
A
= 125 °C
I
CB0
10
10
DC current gain
I
C
= 100
µ
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
h
FE
75
100
100
100
50
300
V
Collector-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
V
CEsat
0.4
1.6
Base-emitter saturation voltage
1)
I
C
= 150 mA
, I
B
= 15 mA
I
C
= 500 mA
, I
B
= 50 mA
V
BEsat
1.3
2.0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
I
EB0
10
nA
Collector cutoff current
V
CE
= 30 V,
V
BE
= 0.5 V
I
CEX
50
Base cutoff current
V
CE
= 30 V,
V
BE
= 3 V
I
BL
50
1)
Pulse test conditions:
t
300
µ
s,
D
2 %.
Semiconductor Group
3
SXT 2907 A
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Test circuits
Delay and rise time
Storage and fall time
MHz
Transition frequency
I
C
= 50 mA
, V
CE
= 20 V,
f
= 100 MHz
f
T
200
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
8
AC characteristics
Input capacitance
V
EB
= 2 V,
f
= 1 MHz
C
ibo
30
Unit
Values
Parameter
Symbol
min.
typ.
max.
ns
ns
ns
ns
Switching times
V
CC
= 30 V,
V
BE
= 0.5 V,
I
C
= 150 mA
,
I
B1
= 15 mA
V
CC
= 6 V,
I
C
= 150 mA
,
I
B1
=
I
B2
= 15 mA
t
d
t
r
t
s
t
f
10
40
80
30
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