Semiconductor Group
1
02.95
Ge-Avalanche Photodiode with Pigtail,
Central Pin
SRD 00534X
SRD 00535X
·
Designed for application in fiber-optic communication
systems
·
Sensitive receiver for the 2
nd
optical window
(1300 nm)
·
High gain-bandwidth product
·
Suitable for bit rates up to 2.5 Gbit/s and long-haul
transmission
·
Planar structure
·
Small radiant sensitive area
·
Low multiplied dark current
·
High spectral sensitivity by built-in optics
·
Hermetically sealed metal case with central pin
·
With optimally coupled multimode-fiber pigtail
Type
Ordering Code
Connector/Flange
SRD 00534H
Q62702-Pxxxx
Pigtail, FC/PC-connector
SRD 00535H
Q62702-Pxxxx
Pigtail with flange,
FC/PC-connector
Component with other connector types on request.
Maximum Ratings
Parameter
Symbol
Values
Unit
Forward current
I
F
50
mA
Reverse voltage
V
R
*
V
Operating and storage temperature
T
A
T
stg
-
40
...
+ 85
°C
Max. radiant power into the opt. port
(
V
R
= 5 V)
port
1
mW
Soldering time (wave / dip soldering), distance
between solder point and base plate
(
2 mm, 260 °C)
t
s
10
s
* Individual value of
V
BR
is delivered with each component.
SRD 00534X
SRD 00535X
Semiconductor Group
2
Characteristics
All optical data refer to an optimally coupled 10/125
µ
m SM fiber at ambient temperature of
25 °C, unless otherwise defined.
Parameter
Symbol
Values
Unit
Spectral sensitivity
= 1310 nm,
M
= 1
S
0.8 (
0.7)
A/W
Rise and fall time (10 %
-
90 %)
R
L
= 50
,
M
= 1,
= 1310 nm,
port
= 100
µ
W
t
r
;
t
f
0.3 (
0.5)
ns
Multiplication factor at
V
R
= 0.9
V
BR
M
4 (
3)
Breakdown voltage
I
R
= 100
µ
A
V
BR
28
...
40
V
Total capacitance,
port
= 0,
f
= 1 MHz
V
R
= 0 V,
V
R
= 25 V
C
7
1.5
pF
pF
Dark current
V
R
= 10 V
V
R
= 0.9
V
BR
I
D
< 200
< 300
nA
nA
Multiplied dark current (
M
= 10)
I
DM
20
nA
Optical return loss
R
L
> 30
dB
SRD 00534X
SRD 00535X
Semiconductor Group
3
Rel. Spectral Sensitivity
M
= 1 (
V
R
= 10 V)
Dark Current
I
D
=
I
D
(
V
R
/
V
BR
)
Multiplication Factor
M
=
M
(
V
R
/
V
BR
)
0
0.2
0.4
0.6
0.8
1
800
1000
1200
1400
1600
Wavelength in nm
Rel. Sensitivity
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VR/VBR
ID in uA / M
M
ID
Frequency Response of Sensitivity
S
=
S
(
f
),
= 1300 nm
Temperatur Behaviour of Breakdown
Voltage
V
BR
/
V
BR(25 °C)
(
T
A
)
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
100
10000
Frequency in MHz
Sensitivity in dB
M=2
M=8
M=16
M=32
0.9
0.95
1
1.05
1.1
-50
-25
0
25
50
75
100
Ambient Temperature in °C
VBR/VBR(25)
SRD 00534X
SRD 00535X
Semiconductor Group
4
Temperature Behaviour of Dark Current
I
D
/
I
D(25 °C)
(
T
A
)
Sensitivity at different input Powers
V
BR
/
V
BR(25 °C)
(
T
A
)
0
20
40
60
80
100
120
140
160
180
200
-50
-25
0
25
50
75
100
Ambient Temperature in °C
ID/ID(25)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.00E-07
1.00E-05
1.00E-03
Popt in W
Sensitivity in A/W
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