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Part Number SMBTA 05

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Semiconductor Group
1
NPN Silicon AF Transistors
SMBTA 05
SMBTA 06
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBTA 05
SMBTA 06
Q68000-A3430
Q68000-A3428
s1H
s1G
SOT-23
1
2
3
B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
°C
Total power dissipation,
T
S
=
79 °C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
285
K/W
500
330
150
­ 65 ... + 150
Emitter-base voltage
V
EB0
60
80
SMBTA 05
SMBTA 06
Junction - soldering point
R
th JS
215
4
60
80
Peak collector current
I
CM
A
1
Peak base current
I
BM
200
Base current
I
B
mA
100
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: SMBTA 55
SMBTA 56 (PNP)
5.91
Semiconductor Group
2
SMBTA 05
SMBTA 06
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE
­
­
1.2
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
V
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBTA 05
SMBTA 06
V
(BR)CE0
60
80
­
­
­
­
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
µ
A
SMBTA 05
SMBTA 06
V
(BR)CB0
60
80
­
­
­
­
Emitter-base breakdown voltage
I
E
= 10
µ
A
V
(BR)EB0
4
­
­
nA
nA
µ
A
µ
A
Collector-base cutoff current
V
CB
= 60 V
SMBTA 05
V
CB
= 80 V
SMBTA 06
V
CB
= 60 V,
T
A
= 150 °C
SMBTA 05
V
CB
= 80 V,
T
A
= 150 °C
SMBTA 06
I
CB0
­
­
­
­
­
­
­
­
100
100
20
20
­
DC current gain
1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
­
130
­
170
V
V
CEsat
­
­
0.25
nA
Collector cutoff current
V
CE
= 60 V
I
CE0
­
­
100
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
­
100
­
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
­
12
­
1)
Pulse test conditions:
t
300
µ
s,
D
=
2 %.
Semiconductor Group
3
SMBTA 05
SMBTA 06
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector current
I
C
=
f
(
V
BE
)
V
CE
= 1 V
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 5 V
Semiconductor Group
4
SMBTA 05
SMBTA 06
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
),
h
FE
= 10
Collector cutoff current
I
CB0
=
f
(
T
A
)
V
CB
=
V
CEmax
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
),
h
FE
= 10
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 1 V