Semiconductor Group
1
NPN Silicon Switching Transistors
SMBT 2222
SMBT 2222 A
5.91
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
SMBT 2222
SMBT 2222 A
Q68000-A6481
Q68000-A6473
s1B
s1P
SOT-23
1
2
3
B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Collector current
I
C
mA
Junction temperature
T
j
°C
Total power dissipation,
T
S
=
77 °C
P
tot
mW
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
290
K/W
600
330
150
65 ... + 150
Emitter-base voltage
V
EB0
30
40
60
75
SMBT 2222
SMBT 2222 A
5
6
Junction - soldering point
R
th JS
220
q
High DC current gain: 0.1 mA to 500 mA
q
Low collector-emitter saturation voltage
q
Complementary types: SMBT 2907,
SMBT 2907 A (PNP)
Semiconductor Group
2
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
SMBT 2222
SMBT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
SMBT 2222
SMBT 2222 A
Collector-emitter saturation voltage
1)
I
C
= 150 mA,
I
B
= 15 mA
SMBT 2222
SMBT 2222 A
I
C
= 500 mA,
I
B
= 50 mA
SMBT 2222
SMBT 2222 A
V
Collector-emitter breakdown voltage
I
C
= 10 mA
SMBT 2222
SMBT 2222 A
V
(BR)CE0
30
40
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 10
µ
A
SMBT 2222
SMBT 2222 A
V
(BR)CB0
60
75
Emitter-base breakdown voltage
I
E
= 10
µ
A
SMBT 2222
SMBT 2222 A
V
(BR)EB0
5
6
nA
Emitter cutoff current
V
EB
= 3 V
I
EB0
10
nA
nA
µ
A
µ
A
Collector cutoff current
V
CB
= 50 V
SMBT 2222
V
CB
= 60 V
SMBT 2222 A
V
CB
= 50 V,
T
A
= 150 °C
SMBT 2222
V
CB
= 60 V,
T
A
= 150 °C
SMBT 2222 A
I
CB0
10
10
10
10
DC current gain
I
C
= 100
µ
A,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 150 mA,
V
CE
= 1 V
1)
I
C
= 150 mA,
V
CE
= 10 V
1)
I
C
= 500 mA,
V
CE
= 10 V
1)
SMBT 2222
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
T
A
= 55 °C
SMBT 2222 A
h
FE
35
50
75
50
100
30
40
35
300
V
V
CEsat
0.4
0.3
1.6
1.0
V
BEsat
0.6
1.3
1.2
2.6
2.0
1)
Pulse test conditions:
t
300
µ
s,
D
= 2 %.
Semiconductor Group
3
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
SMBT 2222
SMBT 2222 A
f
T
250
300
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
8
Unit
Values
Parameter
Symbol
min.
typ.
max.
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
SMBT 2222
SMBT 2222 A
C
ibo
30
25
ps
Collector-base time constant
I
E
= 20 mA,
V
CB
= 10 V,
f
= 31.8 MHz
SMBT 2222 A
r
b
'C
c
150
k
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
h
11e
2
0.25
8
1.25
10
4
Open-circuit reverse voltage transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
h
12e
8.0
4.0
Short-circuit forward current transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
h
21e
50
75
300
375
µ
S
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
SMBT 2222 A
h
22e
5
25
35
200
dB
Noise figure
I
C
= 100
µ
A,
V
CE
= 10 V,
R
S
= 1 k
f
= 1 kHz
SMBT 2222 A
F
4.0
Semiconductor Group
4
SMBT 2222
SMBT 2222 A
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Test circuits
Delay and rise time
Storage and fall time
Oscillograph:
R
> 100
C
< 12 pF
t
r
<
5 ns
AC characteristics (continued)
Unit
Values
Parameter
Symbol
min.
typ.
max.
ns
ns
ns
ns
V
CC
= 30 V,
I
C
= 150 mA
, I
B1
= 15 mA
V
BE(off)
= 0.5 V
Delay time
Rise time
V
CC
= 30 V,
I
C
= 150 mA
, I
B1
=
I
B2
= 15 mA
Storage time
Fall time
t
d
t
r
t
stg
t
f
10
25
225
60
Semiconductor Group
5
SMBT 2222
SMBT 2222 A
Total power dissipation
P
tot
=
f
(
T
A
*;
T
S
)
* Package mounted on epoxy
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(
t
p
)
Collector-base capacitance
C
cb
=
f
(
V
CB
)
f
= 1 MHz
Transition frequency
f
T
=
f
(
I
C
)
V
CE
= 20 V
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