Semiconductor Group
1
1997-11-01
SMT Multi TOPLED
®
Ma
e in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ
Type
Bestellnummer
Ordering Code
SFH 331
Q62702-P1634
GPL06924
C
A
E
C
3
2
4
1
0.4
0.6
0.18
0.12
typ
0.1
0.5
1.1
3.7
3.3
0.7
0.9
1.7
2.1
0.6
0.8
2.3
2.1
2.6
3.0
3.0
3.4
(2.4)
Package marking
Emission color : super-red
SFH 331
Wesentliche Merkmale
q
Geeignet für Vapor-Phase Löten und
IR-Reflow Löten
Features
q
Suitable for vapor-phase and IR-reflow
soldering
Semiconductor Group
2
1997-11-01
SFH 331
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
LED
Transistor
Betriebstemperatur
Operating temperature range
T
op
55 ... + 100
55 ... + 100
°
C
Lagertemperatur
Storage temperature range
T
stg
55 ... + 100
55 ... + 100
°C
Sperrschichttemperatur
Junction temperature
T
j
+ 100
+ 100
°C
Durchlaßstrom (LED)
Forward current (LED)
I
F
30
mA
Kollektorstrom (Transistor)
Collector current (Transistor)
I
C
15
mA
Stoßstrom
Surge current
t
10
µ
s,
D
= 0.005
I
FM
500
75
mA
Sperrspannung (LED)
Reverse voltage (LED)
V
R
5
V
Kollektor-Emitter Spannung (Transistor)
Collector-emitter voltage (Transistor)
V
CE
35
V
Verlustleistung
Total power dissipation
P
tot
100
165
mW
Wärmewiderstand Sperrschicht/Umgebung
Thermal resistance junction/ambient
Montage auf PC-Board*
(Padgröße
16 mm
2
)
mounting on pcb* (pad size
16 mm
2
)
Sperrschicht / Lötstelle
junction / soldering joint
R
th JA
R
th JS
450
350
450
K/W
K/W
*
PC-board: G30/FR4
Notes
Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom
Betriebszustand des anderen.
The stated max. ratings refer to the specified chip regardless of the operating status of the other
one.
Semiconductor Group
3
1997-11-01
SFH 331
Kennwerte LED (
T
A
= 25 °C)
Characteristics LED
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge des emittierten Lichtes
(typ.)
Wavelength at peak emission
(typ.)
I
F
= 10 mA
peak
635
nm
Dominantwellenlänge
(typ.)
Dominant wavelength
(typ.)
I
F
= 10 mA
dom
628
nm
Spektrale Bandbreite bei 50 %
I
rel max
(typ.)
Spectral bandwidth at 50 %
I
rel max
(typ.)
I
F
= 10 mA
45
nm
Abstrahlwinkel bei 50 %
I
V
(Vollwinkel)
Viewing angle at 50 %
I
V
2
120
Grad
degr.
Durchlaßspannung
(typ.)
Forward voltage
(max.)
I
F
= 10 mA
V
F
V
F
2.0
2.6
V
V
Sperrstrom
(typ.)
Reverse current
(max.)
V
R
= 5 V
I
R
I
R
0.01
10
µ
A
µ
A
Kapazität
(typ.)
Capacitance
V
R
= 0 V,
f
= 1 MHz
C
0
12
pF
Schaltzeiten:
Switching times:
I
V
from 10 % to 90 %
(typ.)
I
V
from 90 % to 10 %
(typ.)
I
F
= 100 mA,
t
p
= 10
µ
s,
R
L
= 50
t
r
t
f
300
150
ns
ns
Lichtstärke (Gruppe JK) (typ.)
Luminous intensity (group JK)
I
F
= 10 mA
I
V
6 (4.0 ... 12.5)
mcd
Semiconductor Group
4
1997-11-01
SFH 331
Kennwerte Fototransistor (
T
A
= 25
o
C,
= 950 nm)
Characteristics Phototransistor
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
860
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
380 ... 1150
nm
Bestrahlungsempfindliche Fläche
(
240
µ
m)
Radiant sensitive area
(
240
µ
m)
A
0.045
mm
2
Abmessung der Chipfläche
Dimensions of chip area
L
×
B
0.45
×
0.45
mm
×
mm
Abstand Chipoberfläche zu Gehäuseober-
fläche
Distance chip front to case surface
H
0.5 ... 0.7
mm
Halbwinkel
Half angle
±
60
Grad
degr.
Kapazität
Capacitance
V
CE
= 0 V,
f
= 1 MHz,
E
= 0
C
CE
5.0
pF
Dunkelstrom
Dark current
V
CE
= 25 V,
E
= 0
I
CEO
1 (
200)
nA
Fotostrom
Photocurrent
E
e
= 0.1 mW/cm
2
,
V
CE
= 5 V
I
PCE
16
µ
A
Anstiegszeit/Abfallzeit
Rise time/Fall time
I
C
= 1 mA,
V
CC
= 5 V,
R
L
= 1 k
t
r
,
t
f
7
µ
s
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
I
C
= 5
µ
A,
E
e
= 0.1 mW/cm
2
V
CEsat
150
mV
Semiconductor Group
5
1997-11-01
SFH 331
LED Radiation characteristics
I
rel
=
f
(
)
Phototransistor Directional characteristics
S
rel
=
f
(
)
LED Relative spectral emission
I
rel
=
f
(
),
T
A
= 25 °C,
I
F
= 20 mA
V (
) = Standard eye response curve
0
0.2
0.4
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0°
10°
20°
40°
30°
OHL01660
50°
60°
70°
80°
90°
100°
0°
20°
40°
60°
80°
100°
120°
%
rel
OHL02350
V
100
80
60
40
20
0
400
450
500
550
600
650
700
nm
super-red
Semiconductor Group
6
1997-11-01
SFH 331
Forward current
I
F
=
f
(
V
F
)
T
A
= 25 °C
Max. permissible forward current
I
F
=
f
(
T
A
)
Forward current
V
F
=
f
(
T
A
)
I
F
= 10 mA
Rel. luminous intensity
I
V
/
I
V(10 mA)
=
f
(
I
F
),
T
A
= 25 °C
Wavelength at peak emission
peak
=
f (T
A
),
I
F
= 20 mA
Rel. luminous intensity
I
V
/
I
V(25 °C)
=
f
(
T
A
),
I
F
= 10 mA
Perm. pulse handling capability
I
F
=
f
(
t
p
)
Duty cycle D = parameter,
T
A
= 25 °C
Dominant wavelength
dom
=
f
(
T
A
)
I
F
= 20 mA
10
-1
V
5
super-red
OHL02351
F
F
V
0
10
1
10
2
10
5
mA
1.0
1.4
1.8
2.2
2.6
3.0
3.4
60
OHL01661
F
0
100
60
40
20
A
80
0
T
10
20
30
40
50
°C
mA
green
super-red
orange
yellow
pure-green
1.4
OHL02106
V
F
°C
A
T
0
20
40
60
80
100
1.6
1.8
2.0
2.2
V
2.4
V
V (10mA)
10
-1
0
10
10
1
2
10
mA
10
-3
5
OHL02316
F
5
-2
10
5
-1
10
0
10
1
10
5
5
super-red
green
yellow
orange
super-red
pure-green
550
OHL02104
peak
°C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
yellow
green
orange
super-red
pure-green
0.0
OHL02150
°C
A
T
0
20
40
60
80
100
V
V
0.4
0.8
1.2
1.6
2.0
(25 °C)
OHL01686
s
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
T
T
P
F
t
P
=
D = 0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
F
t
2
10
0.1
p
10
3
mA
yellow
green
orange
super-red
pure-green
550
OHL02105
dom
°C
A
T
0
20
40
60
80
100
570
590
610
630
650
nm
690
Semiconductor Group
7
1997-11-01
SFH 331
Phototransistor
Rel. spectral sensitivity
S
rel
=
f
(
)
Total power dissipation
P
tot
=
f
(
T
A
)
Dark current
I
CEO
=
f
(
T
A
),
V
CE
= 5 V
, E
= 0
Photocurrent
I
PCE
=
f
(
V
CE
),
E
e
= Parameter
Capacitance
C
CE
=
f
(
V
CE
),
f
= 1 MHz,
E
= 0
Photocurrent
I
PCE
=
f
(
E
e
),
V
CE
= 5 V
Dark current
I
CEO
=
f
(
V
CE
),
E
= 0
Photocurrent
I
PCE
/
I
PCE25
o
=
f
(
T
A
),
V
CE
= 5 V
OHF01121
0
rel
S
400
600
800
1000
1200
20
40
60
80
%
100
nm
OHF00871
tot
P
0
0
40
80
120
160
mW
200
20
40
60
80 °C 100
T
A
T
OHF01530
A
CEO
-1
10
10
0
10
1
10
2
10
3
-25
nA
0
25
50
75
100
°C
V
OHF01529
CE
PCE
0
0
10
10
-2
10
-1
mA
V
5
10
15
20
25
30
35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0
V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
E
OHF01924
e
PCE
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
µ
A
V
OHF01527
CE
CEO
-3
10
10
-2
10
-1
10
0
10
1
0
5
10
15
20
25
30
35
V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
PCE
PCE
25
C
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