Semiconductor Group
1
5.91
Type
Marking
Ordering Code
Pin Configuration
Package
1)
1
2
3
MPSA 92
MPSA 93
MPSA 92
MPSA 93
Q68000-A5906
Q68000-A4810
E
B
C
TO-92
Maximum Ratings
Parameter
Symbol
Values
Unit
MPSA 92
MPSA 93
Collector-emitter voltage
V
CE0
300
200
V
Collector-base voltage
V
CB0
300
200
Emitter-base voltage
V
EB0
5
Collector current
I
C
500
mA
Base current
I
B
100
Total power dissipation
, T
C
= 66 °C
2)
P
tot
625
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
65 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
200
K/W
Junction - case
2)
R
th JC
135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on AI-heat sink 15 mm
×
25 mm
×
0.5 mm.
PNP Silicon High-Voltage Transistors
MPSA 92
MPSA 93
1
2
3
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types:
MPSA 42
MPSA 43 (NPN)
MPSA 92
MPSA 93
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25
°
C, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
MPSA 92
MPSA 93
V
(BR)CE0
300
200
V
Collector-base breakdown voltage
I
C
= 100
µ
A
, I
B
= 0
MPSA 92
MPSA 93
V
(BR)CB0
300
200
Emitter-base breakdown voltage
I
E
= 100
µ
A
, I
B
= 0
V
(BR)EB0
5
Collector-base cutoff current
V
CB
= 200 V
MPSA 92
V
CB
= 160 V
MPSA 93
V
CB
= 200 V
, T
A
= 150
°
C
MPSA 92
V
CB
= 160 V,
T
A
= 150
°
C
MPSA 93
I
CB0
100
100
20
20
nA
nA
µ
A
µ
A
Emitter-base cutoff current
V
BE
= 3 V,
I
C
= 0
I
CER
100
nA
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
h
FE
25
40
25
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
C
= 2 mA
MPSA 92
MPSA 93
V
CEsat
0.5
0.4
V
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
0.9
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
f
T
70
MHz
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
MPSA 92
MPSA 93
C
obo
6
8
pF
1)
Pulse test conditions:
t
300
µ
s,
D
2 %.
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