51
FEATURES
· Current Transfer Ratio at I
F
=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
· High Collector-Emitter Voltage
ILD/Q1: BV
CEO
=50 V
ILD/Q2, ILD/Q5: BV
CEO
=70 V
· Field-Effect Stable by TRansparent IOn
Shield (TRIOS) Isolation Test Voltage, 5300
VAC
RMS
· Underwriters Lab File #E52744
·
VDE 0884 Available with Option 1
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage ................................................6 V
Forward Current ...........................................60 mA
Surge Current ................................................. 2.5 A
Power Dissipation.......................................100 mW
Derate Linearly from 25
°
C ..................... 1.3 mW/
°
C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ........................................................... 50 V
ILD/Q2, ILD/Q5...............................................70 V
Collector Current .......................................... 50 mA
Collector Current (t<1 ms)...........................400 mA
Power Dissipation.......................................200 mW
Derate Linearly from 25
°
C ......................2.6 mW/
°
C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23
°
C/50%RH,
DIN 50014) .................................... 5300 VAC
RMS
Creepage ............................................... min. 7 mm
Clearance............................................... min. 7 mm
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ......................... R
IO
=10
12
V
IO
=500 V, T
A
=100
°
C ....................... R
IO
=10
11
Package Power Dissipation ...................... 250 mW
Derate Linearly from 25
°
C ..................... 3.3 mW/
°
C
Storage Temperature................... 40
°
C to +150
°
C
Operating Temperature ................40
°
C to +100
°
C
Junction Temperature.................................... 100
°
C
Soldering Temperature
(2 mm from case bottom) .......................... 260
°
C
V
D E
DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared
LEDs and silicon NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The ILD/Q1/2/5 are especially
designed for driving medium-speed logic and can be used to eliminate trou-
blesome ground loop and noise problems. Also these couplers can be
used
to replace relays and transformers in many digital interface applica-
tions such as CRT modulation. The ILD1/2/5 has two isolated channels in a
single DIP package and the ILQ1/2/5 has four isolated channels per pack-
age.
See Appnote 45, "How to Use Optocoupler Normalized Curves."
Dimensions in inches (mm)
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
.100 (2.54) Typ.
3
°
9
°
.305 Typ.
(7.75) Typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D.
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4
°
Typ.
4
°
Typ.
.100 (2.54) Typ.
10
°
Typ.
10
°
Typ.
3
°
9
°
.305 Typ.
(7.75) Typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
8
7
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
Quad Channel
Dual Channel
DUAL CHANNEL
ILD1/2/5
QUAD CHANNEL
ILQ1/2/5
PHOTOTRANSISTOR
OPTOCOUPLER
52
ILD/Q1/2/5
Characteristics
Package Transfer Characteristics (Each Channel)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.25
1.65
V
I
F
=60 mA
Reverse Current
I
R
0.01
10
µ
A
V
R
=6 V
Capacitance C
0
25
pF
V
R
=0 V, f=1 MHz
Thermal Resistance, Junction to Lead
R
THJL
750
°
C/W
Detector
Capacitance
C
CE
6.8
pF
V
CE
=5 V, f=1 MHz
Leakage Current, Collector-Emitter
I
CEO
5
50
nA
V
CE
=10 V
Saturation Voltage, Collector-Emitter
V
CESAT
0.25
0.4
I
CE
=1 mA, I
B
=20
µ
A
DC Forward Current Gain
HFE
200
650
1800
V
CE
= 10 V, I
B
=20
µ
A
Saturated DC Forward Current Gain
HFE
SAT
120
400
600
V
CE
= 0.4 V, I
B
=20
µ
A
Thermal Resistance, Junction to Lead
R
THJL
500
°
C/W
Symbol
Min.
Typ.
Max.
Unit
Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
75
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
20
90
300
%
I
F
=10 mA, V
CE
=10 V
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
170
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
100
200
500
%
I
F
=10 mA, V
CE
=10 V
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
100
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
50
130
400
%
I
F
=10 mA, V
CE
=10 V
Isolation and Insulation
Common Mode Rejection, Output High
C
MH
5000
V/
µ
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=0 mA
Common Mode Rejection, Output Low
C
ML
5000
V/
µ
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=10 mA
Common Mode Coupling Capacitance
C
CM
0.01
pF
Package Capacitance
C
IO
0.8
pF
V
IO
=0 V, f=1 MHz
53
ILD/Q1/2/5
Typical Switching Times
Figure 1. Non-saturated switching timing
Figure 2. Non-saturated switching timing
Figure 3. Saturated switching timing
Figure 4. Saturated switching timing
V
O
V
CC
=5 V
R
L
=75
F=10 KHz,
DF=50%
I
F
=10 mA
I
F
V
O
t
D
t
R
50%
PHL
t
PLH
t
S
t
F
t
V
O
V
CC
=5 V
R
L
F=10 KHz,
DF=50%
I
F
=10 mA
I
F
V
O
t
D
t
R
V
TH
=1.5 V
t
PHL
t
PLH
t
S
t
F
Figure 5. Normalized non-saturated and saturated
CTR at T
A
=25
°
C versus LED current
Figure 6. Normalized non-saturated and saturated
CTR at T
A
=25
°
C versus LED current
Characteristic
ILD/Q1
I
F
=20 mA
ILD/Q2
I
F
=5 mA
ILD/Q5
I
F
=10 mA
Unit
Condition
Delay, t
D
0.8
1.7
1.7
µ
s
V
CE
=5 V
R
L
=75 k
50% of V
PP
Rise time, t
R
1.9
2.6
2.6
µ
s
Storage, t
S
0.2
0.4
0.4
µ
s
Fall Time, t
F
1.4
2.2
2.2
µ
s
Propagation
H-L, t
PHL
0.7
1.2
1.1
µ
s
Propagation
L-H, t
PLH
1.4
2.3
2.5
µ
s
Characteristic
ILD/Q1
I
F
=20 mA
ILD/Q2
I
F
=5 mA
ILD/Q5
I
F
=10 mA
Unit
Condition
Delay, t
D
0.8
1
1.7
µ
s
V
CE
=0.4 V
R
L
=1 k
V
CC
=5 V
V
TH
=1.5 V
Rise time, t
R
1.2
2
7
µ
s
Storage, t
S
7.4
5.4
4.6
µ
s
Fall Time, t
F
7.6
13.5
20
µ
s
Propagation
H-L, t
PHL
1.6
5.4
2.6
µ
s
Propagation
L-H, t
PLH
8.6
7.4
7.2
µ
s
.1
1
10
100
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
If - Forward Current - mA
Vf-Forward Voltage - V
Ta = -55
°
C
Ta = 25
°
C
Ta = 100
°
C
.1
1
10
100
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF - LED Current - mA
CTRNF - Normalized CTR Factor
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25
°
C
CTRce(sat) Vce = 0.4V
54
ILD/Q1/2/5
Figure 10. Collector-emitter current versus tempera-
ture and LED current
Figure 11. Collector-emitter leakage current versus
temperature
Figure 12. Propagation delay versus collector load
resistor
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
50
°
C
70
°
C
85
°
C
IF - LED Current - mA
Ice - Collector Current - mA
25
°
C
100
80
60
40
20
0
-20
10 -2
10 -1
10 0
10 1
10 2
10 3
10 4
10 5
Ta - Ambient Temperature -
°
C
Iceo - Collector-Emitter - nA
TYPICAL
Vce = 10V
.1
1
10
100
1
10
100
1000
1.0
1.5
2.0
2.5
RL - Collector Load Resistor - K
tPLH - Propagation Low-High -
µ
s
tPHL - Propagation High-Low -
µ
s
tPLH
tPHL
Ta = 25
°
C, IF = 10mA
Vcc = 5V, Vth = 1.5V
Figure 7. Normalized non-saturated and saturated
CTR at T
A
=50
°
C versus LED current
Figure 8. Normalized non-saturated and saturated
CTR at T
A
=70
°
C versus LED current
Figure 9. Normalized non-saturated and saturated
CTR at T
A
=85
°
C versus LED current
.1
1
10
100
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF - LED Current - mA
CTRNF - Normalized CTR Factor
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25
°
C
Ta = 50
°
C
CTRce(sat) Vce = 0.4V
.1
1
10
100
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF - LED Current - mA
CTR - Normalized CTR Factor
Normalized to:
Vce = 10V, IF = 10mA
Ta = 25
°
C
Ta = 70
°
C
CTRce(sat) Vce = 0.4V
100
10
1
.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
Normalized to:
Vce = 10V, IF = 10mA, Ta = 25
°
C
Ta = 85
°
C
CTRce(sat) Vce = 0.4V
IF - LED Current - mA
NCTR - Normalized CTR
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