BTS 730
Semiconductor Group
1
12.96
PWM Power Unit
The device allows continuous power control for lamps,LEDs or
inductive loads.
·
Highside switch
·
Overtemperatur protection
·
Short circuit / overload protection through pulse width
reduction and overload shutdown
·
Load dump protection
·
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
·
Reverse battery protection
1)
·
Timing frequency adjustable
·
Controlled switching rise and fall times
·
Maximum current internally limited
·
Protection against loss of GND
2)
·
Electrostatic discharge (ESD) protection
·
Package: P-DSO-20-6 (SMD)
Note: Switching frequency is programmed with an external capacitor.
Type
Ordering Code
Marking
Package
BTS730
Q67060-S7007-A2
-
P-DSO-20-6
Maximum Ratings
Parameter
Symbol
Values
Unit
Active overvoltage prodection
V
bb (AZ)
>40
V
Short circuit current
I
SC
self-limited
-
Input current (DC)
I
Ct
2
mA
Pin1 (C
t
) and pin19 (V
C
)
I
VC
2
mA
Operating temperature range
T
j
-40...+150
°C
Storage temperature range
T
stg
-50...+150
Power dissipation
3)
T
a
=25°C
P
tot
3
W
T
a
=85°C
2
W
Thermal resistance chip-case
3)
R
th JC
35
K/W
chip-ambient
R
th JA
75
1)
With 150
resistor in signal GND connection.
2)
Potential between signal GND and load GND >0.5V
3)
Device on 50mm
*
50mm
*
1.5mm epoxy PCB FR4 with 6 cm
2
(one layer,70
µ
m thick) copper area for V
bb
conection, PCB is vertical without air blowing.
BTS 730
Semiconductor Group
3
Electrical Characteristics
at T
j
= 25
E
C, unless otherwise specified.C
Bootstrap
= 22nF
Parameter
Symbol
Values
Unit
min.
typ.
max.
On-state resistance
R
ON
-
-
70
m
I
L
=3A,
V
bb
=12V
Operating voltage
V
bb
5.9
1)
16.9
2)
V
T
j
= -40 ...+150
E
C
Nominal current,
calculated value
I
L
-ISO
3
-
-
A
ISO-standard:
V
bb
-V
OUT
0.5V, Tc=85°C
Load current limit
I
LLim
-
20
-
A
V
bb
-
V
OUT
> 1V
Undervoltage shutdown
V
bb(LOW)
3
4.2
5.4
V
I
L
= 3A
Overvoltage shutdown
V
bb(HI)
17
18
19
V
I
L
= 3A
Max.output voltage (RMS)
V
RMSmax
12
-
14
V
I
L
= 3A,
V
bb
> 12 V
Reference voltage
V
REF
2
3
V
I
REF
= 10mA
Reference current
I
REF
-
150
-
mA
pin 18 (GND) to pin 20 (V
REF
) short
Internal current
consumption during
I
R
-
5
mA
operation, measured in PWM gap
Bootstrap voltage, pin 2
(
C
B1
) to pin 3 (
C
B2
)
V
B
-
10
-
V
V
bb
= 12 V,
PWM frequency
f
PWM
50
-
100
Hz
T
c
= -40 ... +150 °C,
C
t
= 68 nF
Max. pulse duty factor
D
imax
95
98
-
%
I
L
= 3A,
V
C
=0V , (50%
V
OUT
)
Min. pulse duty factor
D
imin
-
8
14
%
I
L
= 3A,
V
C
=0V , (50%
V
OUT
)
Slew rate "on"
du/d
t
(on)
20
-
120
mV/
µ
s
10 ... 90%
I
OUT
Slew rate "off"
du/d
t
(off)
20
-
120
mV/
µ
s
90 ... 10%
I
OUT
Thermal overload trip
temperature
T
j
150
-
-
°C
1)
Note: undervoltage shutdown
2)
Note: overvoltage shutdown
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