PROFET® BTS 307
Semiconductor Group
1
08.96
Smart Highside Power Switch
Features
·
Overload protection
·
Current limitation
·
Short circuit protection
·
Thermal shutdown
·
Overvoltage protection
·
Fast demagnetization of inductive loads
·
Reverse battery protection
1)
·
Open drain diagnostic output
·
Open load detection in OFF-state
·
CMOS compatible input
·
Loss of ground and loss of
V
bb
protection
·
Electrostatic discharge (ESD) protection
Application
·
µ
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
·
Most suitable for inductive loads
·
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
®
technology. Fully protected by embedded protection
functions.
+ Vbb
IN
ST
Signal GND
ESD
PROFET
®
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
1
)
With external current limit (e.g. resistor R
GND
=150
) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Product Summary
Overvoltage protection
V
bb(AZ)
65
V
Operating voltage
V
bb(on)
5.8 ... 58 V
On-state resistance
R
ON
250 m
Load current (ISO)
I
L(ISO)
1.7
A
TO-220AB/5
5
Standard
1
5
Straight leads
1
5
SMD
BTS 307
Semiconductor Group
2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T
j
= 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
V
bb
65
V
Supply voltage for full short circuit protection
2
)
T
j Start
=-40 ...+150°C
V
bb
40
V
Load current (Short circuit current, see page 4)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), T
C
25 °C
P
tot
50
W
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
V
ESD
1.0
tbd (>1.0)
kV
Input voltage (DC)
V
IN
-0.5 ... +36
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
I
IN
I
ST
±
2.0
±
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
--
--
--
--
2.5
75
K/W
2)
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher V
bb
.
BTS 307
Semiconductor Group
3
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
L
= 2 A,
V
bb
= 24 V
T
j
=25 °C:
T
j
=150 °C:
R
ON
--
220
390
250
500
m
Nominal load current, ISO Norm (pin 3 to 5)
V
ON
= 0.5 V,
T
C
= 85 °C
I
L(ISO)
1.4
1.7
--
A
Output current (pin
5
) while GND disconnected or
GND pulled up,
V
bb
=32 V,
V
IN
= 0, see diagram
page 7
I
L(GNDhigh)
--
--
1.1
mA
Turn-on time to 90%
V
OUT
:
Turn-off time to 10%
V
OUT
:
R
L
= 12
,
V
bb
= 20V,
T
j
=-40...+150°C
t
on
t
off
15
20
--
--
80
70
µ
s
Slew rate on, 10 to 30%
V
OUT
,
R
L
= 12
,
V
bb
= 20V,
T
j
=-40...+150°C
d
V /dt
on
--
--
6
V/
µ
s
Slew rate off, 10 to 30%
V
OUT
,
R
L
= 12
,
V
bb
= 20V,
T
j
=-40...+150°C
-d
V/dt
off
--
--
7
V/
µ
s
Operating Parameters
Operating voltage
3
)
T
j
=-40...+150°C:
V
bb(on)
5.8
--
58
V
Undervoltage shutdown
T
j
=-40...+150°C:
V
bb(under)
2.7
--
4.7
V
Undervoltage restart
T
j
=-40...+150°C:
V
bb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 11
T
j
=-40...+150°C:
V
bb(ucp)
--
5.6
7.5
V
Undervoltage hysteresis
V
bb(under)
=
V
bb(u rst)
-
V
bb(under)
V
bb(under)
--
0.4
--
V
Overvoltage protection
4
)
T
j
=-40...+150°C:
I
bb
=40 mA
V
bb(AZ)
65
70
--
V
Standby current (pin 3)
,
V
IN
=0
T
j
=-40...+150°C:
I
bb(off)
--
10
50
µ
A
Operating current (Pin 1)
5)
,
V
IN
=5 V
I
GND
--
2.2
--
mA
3
)
At supply voltage increase up to
V
bb
= 5.6 V typ without charge pump,
V
OUT
V
bb
- 2 V
4)
See also
V
ON(CL)
in table of protection functions and circuit diagram page 7.
5
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
BTS 307
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
4
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
--
--
4.0
--
10
--
19
--
--
A
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
I
L
= 1 A,
T
j
=-40..+150°C:
V
ON(CL)
59
--
75
V
Thermal overload trip temperature
T
jt
150
--
--
°C
Thermal hysteresis
T
jt
--
10
--
K
Reverse battery (pin 3 to 1)
6
)
-
V
bb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(included in standby current
I
bb(off)
)
I
L(off)
--
6
--
µ
A
Open load detection voltage
T
j
=-40..150°C:
V
OUT(OL)
2.4
3
4
V
Short circuit detection voltage
(pin 3 to 5)
V
ON(SC)
--
2.5
--
V
6
)
Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
BTS 307
Parameter and Conditions
Symbol
Values
Unit
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
min
typ
max
Semiconductor Group
5
Input and Status Feedback
7
)
Input resistance
see circuit page 6
R
I
--
20
--
k
Input turn-on threshold voltage
V
IN(T+)
1
--
2.5
V
Input turn-off threshold voltage
V
IN(T-)
0.8
--
--
V
Input threshold hysteresis
V
IN(T)
--
0.5
--
V
Off state input current (pin 2),
V
IN
= 0.4 V
I
IN(off)
1
--
30
µ
A
On state input current (pin 2),
V
IN
= 3.5? V
I
IN(on)
10
25
70
µ
A
Delay time for status with open load
after Input neg. slope (see diagram page 11)
t
d(ST OL3)
--
200
--
µ
s
Status output (open drain)
Zener limit voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
ST low voltage
T
j
=-40...+150°C,
I
ST
= +1.6 mA:
V
ST(high)
V
ST(low)
5.4
--
6.1
--
--
0.4
V
7)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
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