Semiconductor Group
1
18/02/1997
BSP 171
SIPMOS
®
Small-Signal Transistor
· P channel
· Enhancement mode
· Logic Level
· Avalanche rated
· V
GS(th)
= -0.8...-2.0 V
Pin 1
Pin 2
Pin 3
Pin 4
G
D
S
D
Type
V
DS
I
D
R
DS(on)
Package
Marking
BSP 171
-60 V
-1.7 A
0.35
SOT-223
BSP 171
Type
Ordering Code
Tape and Reel Information
BSP 171
Q67000-S224
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
A
= 24 °C
I
D
-1.7
A
DC drain current, pulsed
T
A
= 25 °C
I
Dpuls
-6.8
Avalanche energy, single pulse
I
D
= -1.7 A,
V
DD
= -25 V,
R
GS
= 25
L = 3.23 mH, T
j
= 25 °C
E
AS
8
mJ
Gate source voltage
V
GS
±
20
V
Power dissipation
T
A
= 25 °C
P
tot
1.8
W
Semiconductor Group
2
18/02/1997
BSP 171
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
T
j
-55 ... + 150
°C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip to ambient air
1)
R
thJA
70
K/W
Thermal resistance, junction-soldering point
1)
R
thJS
10
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
2
copper area for drain connection
Electrical Characteristics, at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= -0.25 mA,
T
j
= 25 °C
V
(BR)DSS
-60
-
-
V
Gate threshold voltage
V
GS=
V
DS,
I
D
= -1 mA
V
GS(th)
-0.8
-1.4
-2
Zero gate voltage drain current
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -60 V,
V
GS
= 0 V,
T
j
= 125 °C
I
DSS
-
-
-10
-0.1
-100
-1
µA
Gate-source leakage current
V
GS
= -20 V,
V
DS
= 0 V
I
GSS
-
-10
-100
nA
Drain-Source on-state resistance
V
GS
= -10 V,
I
D
= -1.7 A
R
DS(on)
-
0.22
0.35
Semiconductor Group
3
18/02/1997
BSP 171
Electrical Characteristics, at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= -1.7 A
g
fs
1
1.55
-
S
Input capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
iss
-
720
960
pF
Output capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
oss
-
290
435
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= -25 V,
f = 1 MHz
C
rss
-
120
180
Turn-on delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
t
d(on)
-
16
25
ns
Rise time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
t
r
-
70
105
Turn-off delay time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= 0.3 A
R
GS
= 50
t
d(off)
-
230
310
Fall time
V
DD
= -30 V,
V
GS
= -10 V,
I
D
= -0.3 A
R
GS
= 50
t
f
-
280
375
Semiconductor Group
4
18/02/1997
BSP 171
Electrical Characteristics, at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 °C
I
S
-
-
-1.7
A
Inverse diode direct current,pulsed
T
A
= 25 °C
I
SM
-
-
-6.8
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -3.4 A,
T
j
= 25 °C
V
SD
-
-0.9
-1.2
V
Reverse recovery time
V
R
= 30 V,
I
F=
l
S
= 0 , d
i
F
/d
t = 100 A/µs
t
rr
-
300
-
ns
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
= 0 , d
i
F
/d
t = 100 A/µs
Q
rr
-
0.82
-
µC
Semiconductor Group
5
18/02/1997
BSP 171
Power dissipation
P
tot
=
(
T
A
)
0
20
40
60
80
100
120
°C
160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D
=
(
T
A
)
parameter:
V
GS
-10 V
0
20
40
60
80
100
120
°C
160
T
A
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
A
-1.8
I
D
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0, T
C
=25°C
Transient thermal impedance
Z
th JA
=
(
t
p
)
parameter:
D = t
p
/
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group
6
18/02/1997
BSP 171
Typ. output characteristics
I
D
=
(
V
DS
)
parameter:
t
p
= 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
DS
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
A
-3.8
I
D
V
GS
[V]
a
a
-2.0
b
b
-2.5
c
c
-3.0
d
d
-3.5
e
e
-4.0
f
f
-4.5
g
g
-5.0
h
h
-6.0
i
i
-7.0
j
j
-8.0
k
k
-9.0
l
P
tot
= 2W
l
-10.0
Typ. drain-source on-resistance
R
DS (on)
=
(
I
D
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
0.0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 A -3.8
I
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.1
R
DS (on)
V
GS
[V] =
a
-2.0
V
GS
[V] =
a
-2.5
V
GS
[V] =
a
a
-3.0
b
b
-3.5
c
c
-4.0
d
d
-4.5
e
e
-5.0
f
f
-6.0
g
g
-7.0
h
h
-8.0
i
i
-9.0
j
j
-10.0
Typ. transfer characteristics
I
D
= f(V
GS
)
parameter:
t
p
= 80 µs
V
DS
2 x
I
D
x
R
DS(on)max
0
-1
-2
-3
-4
-5
-6
-7
-8
V
-10
V
GS
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
A
-3.6
I
D
Typ. forward transconductance
g
fs
=
f (I
D
)
parameter:
t
p
= 80 µs,
V
DS
2 x
I
D
x
R
DS(on)max
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8 A -3.4
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
S
2.2
g
fs
7
18/02/1997
Semiconductor Group
BSP 171
Drain-source on-resistance
R
DS (on)
=
(
T
j
)
parameter:
I
D
= -1.7 A,
V
GS
= -10 V
-60
-20
20
60
100
°C
160
T
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.9
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th)
=
(
T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= -1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60
-20
20
60
100
°C
160
T
j
2%
typ
98%
Typ. capacitances
C = f (V
DS
)
parameter:
V
GS
=0V,
f = 1 MHz
0
-5
-10
-15
-20
-25
-30
V
-40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
(
V
SD
)
parameter:
T
j
, t
p
= 80 µs
-2
-10
-1
-10
0
-10
1
-10
A
I
F
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
Semiconductor Group
8
18/02/1997
BSP 171
Avalanche energy
E
AS
=
(
T
j
)
parameter:
I
D
= -1.7 A,
V
DD
= -25 V
R
GS
= 25
,
L = 3.23 mH
20
40
60
80
100
120
°C
160
T
j
0
1
2
3
4
5
6
7
mJ
9
E
AS
Drain-source breakdown voltage
V
(BR)DSS
=
(
T
j
)
-60
-20
20
60
100
°C
160
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-71
V
(BR)DSS
Safe operating area
I
D
=f(
V
DS
)
parameter :
D = 0.01, T
C
=25°C
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