Semiconductor Group
1
09.96
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1
2
3
4
BSP 149 Q67000-S071 E6327: 1000 pcs/reel
G
D
S
D
BSP 149 SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
200
V
Drain-gate voltage,
R
GS
= 20 k
V
DGR
200
Gate-source voltage
V
GS
±
14
Gate-source peak voltage, aperiodic
V
gs
±
20
Continuous drain current,
T
A
= 28 °C
I
D
0.48
A
Pulsed drain current,
T
A
= 25 °C
I
D puls
1.44
Max. power dissipation,
T
A
= 25 °C
P
tot
1.8
W
Operating and storage temperature range
T
j
,
T
stg
55 ... + 150
°C
Thermal resistance
1)
chip-ambient
chip-soldering point
R
thJA
R
thJS
70
10
K/W
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55/150/56
1)
Transistor on epoxy pcb 40 mm
×
40 mm
×
1.5 mm with 6 cm
2
copper area for drain connection.
SIPMOS
®
Small-Signal Transistor
BSP 149
q
V
DS
200 V
q
I
D
0.48 A
q
R
DS(on)
3.5
q
N channel
q
Depletion mode
q
High dynamic resistance
q
Available grouped in
V
GS(th)
Semiconductor Group
2
BSP 149
Electrical Characteristics
at
T
j
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=
-
3 V,
I
D
= 0.25 mA
V
(BR)DSS
200
V
Gate threshold voltage
V
DS
= 3 V,
I
D
= 1 mA
V
GS(th)
-
1.8
-
1.2
-
0.7
Drain-source cutoff current
V
DS
= 200 V,
V
GS
=
-
3 V
T
j
= 25 °C
T
j
= 125 °C
I
DSS
0.2
200
µ
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
I
GSS
10
100
nA
Drain-source on-resistance
V
GS
= 0 V,
I
D
= 0.03 A
R
DS(on)
2.5
3.5
Dynamic Characteristics
Forward transconductance
V
DS
2
×
I
D
×
R
DS(on)max
,
I
D
= 0.48 A
g
fs
0.4
0.75
S
Input capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
i
iss
500
670
pF
Output capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
oss
40
60
Reverse transfer capacitance
V
GS
= 0,
V
DS
= 25 V,
f
= 1 MHz
C
rss
12
20
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
DD
= 30 V,
V
GS
=
-
2 ... + 5 V,
R
GS
= 50
,
I
D
= 0.29 A
t
d(on)
7
10
ns
t
r
20
30
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
DD
= 30 V,
V
GS
=
-
2 ... + 5 V,
R
GS
= 50
,
I
D
= 0.29 A
t
d(off)
60
80
t
f
50
65
Semiconductor Group
3
Package Outline
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Electrical Characteristics (cont'd)
at
T
j
= 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Continuous reverse drain current
T
A
= 25 °C
I
S
0.48
A
Pulsed reverse drain current
T
A
= 25 °C
I
SM
1.44
Diode forward on-voltage
I
F
= 0.96 A,
V
GS
= 0
V
SD
0.9
1.2
V
V
GS(th)
Grouping
Symbol
Limit Values
Unit
Test Condition
min.
max.
Range of
V
GS(th)
V
GS(th)
0.15
V
Threshold voltage selected in groups
1)
:
P
R
S
T
U
V
W
V
GS(th)
0.95
1.08
1.21
1.34
1.47
1.60
1.73
0.80
0.93
1.06
1.19
1.32
1.45
1.58
V
V
V
V
V
V
V
V
D1
= 0.2 V;
V
D2
= 3 V;
I
D
= 1 mA
SOT-223
Dimensions in mm
BSP 149
Semiconductor Group
4
Characteristics
at
T
j
= 25 °C, unless otherwise specified.
Total power dissipation
P
tot
=
f
(
T
A
)
Typ. output characteristics
I
D
=
f
(
V
DS
)
parameter:
t
p
= 80
µ
s
Safe operating area
I
D
=
f
(
V
DS
)
parameter:
D
= 0.01,
T
C
= 25 °C
Typ. drain-source on-resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
BSP 149
Semiconductor Group
5
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80
µ
s,
V
DS
2
×
I
D
×
R
DS(on)max.
Drain-source on-resistance
R
DS(on)
=
f (T
j
)
parameter:
I
D
= 0.03 A,
V
GS
= 0 V, (spread)
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
V
DS
2
×
I
D
×
R
DS(on)max.
,
t
p
= 80
µ
s
Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
= 0,
f
= 1 MHz
BSP 149
Semiconductor Group
6
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter:
V
DS
= 3 V,
I
D
= 1 mA, (spread)
Drain current
I
D
=
f
(
T
A
)
parameter:
V
GS
3 V
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
parameter:
t
p
= 80
µ
s,
T
j
,
(spread)
Safe operating area
I
D
=
f
(
V
DS
)
parameter:
D
= 0,
T
C
= 25 °C
BSP 149
Semiconductor Group
7
BSP 149
Drain-source breakdown voltage
V
(BR) DSS
=
b
×
V
(BR)DSS
(25 °C)
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