Semiconductor Group
1
Dec-13-1996
BFG 19S
NPN Silicon RF Transistor
· For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
· CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 19S
BFG19S Q62702-F1359
1 = E
2 = B
3 = E 4 = C
SOT-223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CEO
15
V
Collector-emitter voltage
V
CES
20
Collector-base voltage
V
CBO
20
Emitter-base voltage
V
EBO
3
Collector current
I
C
100
mA
Base current
I
B
12
Total power dissipation
T
S
75 °C
P
tot
1
W
Junction temperature
T
j
150
°C
Ambient temperature
T
A
- 65 ... + 150
Storage temperature
T
stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
75
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
2
Dec-13-1996
BFG 19S
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
15
-
-
V
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
I
CES
-
-
100
µA
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
I
CBO
-
-
100
nA
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
I
EBO
-
-
10
µA
DC current gain
I
C
= 70 mA,
V
CE
= 8 V
h
FE
40
100
220
-
Semiconductor Group
3
Dec-13-1996
BFG 19S
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f = 500 MHz
f
T
4
5.5
-
GHz
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
C
cb
-
0.85
1.4
pF
Collector-emitter capacitance
V
CE
= 10 V,
f = 1 MHz
C
ce
-
0.4
-
Emitter-base capacitance
V
EB
= 0.5 V,
f = 1 MHz
C
eb
-
4.6
-
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
f = 900 MHz
f = 1.8 GHz
F
-
-
4
2.5
-
-
dB
Power gain
2)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
Z
L
=
Z
Lopt
f = 900 MHz
f = 1.8 GHz
G
ma
-
-
8
13.5
-
-
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
f = 900 MHz
f = 1.8 GHz
|
S
21e
|
2
-
-
5
11
-
-
Third order intercept point
I
C
= 70 mA,
V
CE
= 8 V,
f = 900 MHz
Z
S
=
Z
L
= 50
IP
3
-
35
-
dBm
2)
G
ma
= |
S
21
/
S
12
| (k-(k
2
-1)
1/2
)
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