PC866 Series
Low Driving Current Type
Photocoupler
PC866 Series
s
Features
s
Applications
3. Isolation voltage between input and output
( V
iso
4. Also available burn-in type
1. Telephone sets
2. Computer terminals
3. System appliances, measuring instruments
1. Low driving current ( single Tr. output )
( CTR : MIN. 100 % at I
F
= 1mA)
2. High collector-emitter voltage ( V
CEO
: 80V)
s
Outline Dimensions
( Unit : mm )
(
PC866Q
/
PC8D66Q
/
PC8Q66Q
)
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
"
"
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
Anode mark
PC866/PC866Q
866
2.54
International connection
diagram
PC8Q66/PC8Q66Q
Anode mark
PC8D66/PC8D66Q
Anode mark
International connection
diagram
PC8D66
1
2
3
4
1
2
3
4
1 Anode
2 Cathode
3 Emitter
4 Collector
1
2
3
4
5
6
7
8
9
International connection diagram
1
2
3 4
5
6
7
8
9
PC8Q66
1 3 5 7 Anode
2 4 6 8 Cathode
9
Emitter
Collector
7.62
1 3 Anode
2 4 Cathode
5 7 Emitter
6 8 Collector
1
2
3
4
5
6
7
8
1
2
3 4
5
6
7
8
0.5
TYP.
3.0
±
0.5
0.5
±
0.1
0.5
TYP.
7.62
±
0.3
: 5 000V
rms
)
=
0 to 13
°
6.5
±
0.5
7.62
±
0.3
0.26
±
0.1
0.5
±
0.1
2.7
±
0.5
4.58
±
0.5
3.5
±
0.5
3.0
±
0.5
0.5
TYP.
1.2
±
0.3
0.9
±
0.2
=
0 to 13
°
0.26
±
0.1
2.7
±
0.5
3.5
±
0.5
19.82
±
0.5
1.2
±
0.3
0.9
±
0.2
2.54
±
0.25
6.5
±
0.5
=
0 to 13
°
2.54
±
0.25
6.5
±
0.5
0.9
±
0.2
1.2
±
0.3
9.66
±
0.5
2.7
±
0.5
0.26
±
0.1
0.5
±
0.1
3.0
±
0.5
3.5
±
0.5
11
12
13
14
15
16
11
12
13
14
15
16
11
12
13
14
15
16
10
10
10
*3 For 10 seconds
PC866 Series
( Ta = 25°C)
s
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input
Forward current
I
F
50
mA
*1
Peak forward current
I
FM
1
A
Reverse voltage
V
R
6
V
Power dissipation
P
70
mW
Output
Collector-emitter voltage
V
CEO
80
V
Emitter-collector voltage
V
ECO
6
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Total power dissipation
*2
Isolation voltage
P
tot
200
mW
V
iso
Operating temperature
T
opr
- 30 to + 100
°C
Storage temperature
T
stg
- 55 to + 125
°C
*3
Soldering temperature
T
sol
260
°C
( Ta = 25°C)
*1 Pulse width <=100
µ
s, Duty ratio : 0.001
s
Electoro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
V
F
I
F
= 10mA
-
1.2
1.4
V
Peak forward voltage
V
FM
I
FM
= 0.5A
-
-
3.0
V
Reverse current
I
R
V
R
= 4V
-
-
10
µ
A
Terminal capacitance
C
t
V = 0, f = 1kHz
-
30
250
pF
Output
Collector dark current
I
CEO
V
CE
= 24V, I
F
= 0
-
-
100
nA
Collector-emitter breakdown voltage
BV
CEO
I
C
= 0.1mA, I
F
= 0
80
-
-
V
Emitter-collector breakdown voltage
BV
ECO
I
E
= 10
µ
A, I
F
= 0
6
-
-
V
Transfer
charac-
teristics
I
F
= 1mA, V
CE
= 0.5V
-
-
Collector-emitter saturation voltage
V
CE( sat )
I
F
= 1mA, I
C
= 0.2mA
-
-
0.4
V
Isolation resistance
R
ISO
5 x 10
10
10
11
-
Floating capacitance
C
f
V = 0, f = 1MHz
-
0.6
1.0
pF
Cut-off frequency
fc
V
CE
= 5V, I
C
= 2mA, R
L
= 100
- 3dB
-
50
-
kHz
Response time
Rise time
t
r
V
CE
= 2V, I
C
= 2mA
R
L
= 100
-
8
-
µ
s
Fall time
t
f
-
8
-
5 000
V
rms
*2 40 to 60% RH, AC for 1 minute
CTR
DC500V, 40 to 60% RH
100
%
Current transfer ratio
0
Power dissipation P
tot
(
mW
)
250
200
150
50
100
0
25
50
75
100
125
Fig. 4 Power Dissipation vs.
Ambient Temperature
Duty ratio
5
5
Peak forward current I
FM
Pulse width <=100
µ
s
10
20
100
50
200
500
2
10
- 3
10
- 2
5
2
10
- 1
5
2
5
0
- 30
10
0
25
50
75
100
125
20
30
40
50
60
Fig. 1 Forward Current vs.
Ambient Temperature
Ambient temperature T
a
(°C)
0
- 30
125
25
75
0
50
100
20
40
60
80
100
120
25
70
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
Diode power dissipation P
(
mW
)
Ambient temperature T
a
(°C)
0
0
125
100
200
50
150
25
50
75
100
Ambient Temperature
- 30
Forward voltage V
F
(V)
Fig. 6 Forward Current vs. Forward Voltage
PC866 Series
Forward current I
F
(
mA
)
Collector power dissipation P
C
(
mW
)
Forward current I
F
(
mA
)
Ambient temperature T
a
( °C )
Ambient temperature T
a
( °C )
(
mA
)
Fig. 5 Peak Forward Current vs. Duty Ratio
Fig. 3 Collector Power Dissipation vs.
1
50°C
25°C
0°C
0
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
5
10
20
50
100
200
500
1
- 25°C
T
a
= 75°C
T
a
= 25°C
- 30
10 000
5 000
2 000
1 000
0
0.1
Current transfer ratio CTR
(
%
)
500
1
5
400
300
200
100
Forward current I
F
( mA )
0
50
100
150
- 30
0
20
40
60
80
100
Relative current transfer ratio
(
%
)
Fig. 9 Relative Current Transfer Ratio vs.
Ambient Temperature
0
- 30
0.02
Ambient temperature T
(°C)
0
20
40
60
80
100
0.04
0.06
0.08
0.10
0.12
0.14
0.16
CE
( sat
)
Collector dark current I
20
0
40
60
80
10
- 10
10
- 9
10
- 8
10
- 6
10
- 5
5
5
5
5
5
5
100
10
- 7
Ambient Temperature
0
0
Collector current I
C
(
mA)
Collector-emitter voltage V
CE
( V)
10
1
2
3
4
5
20
30
40
50
P
C
( MAX.)
20mA
10mA
5mA
1mA
Fig. 8 Collector Current vs.
Collector-emitter Voltage
L
( k
)
0.2
0.1
0.5
1
2
0.01
0.1
1
10
50
Response time
(
µ
s
)
PC866 Series
Fig. 7 Current Transfer Ratio vs.
Forward Current
5
10
20
50
100
200
500
Fig.10 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.11 Collector Dark Current vs.
10
- 11
- 30
Ambient temperature T
a
( °C )
a
Collector-emitter saturation voltage V
(
V
)
CEO
(
A
)
T
a
= 25°C
V
CE
= 0.5V
I
F
= 1mA
V
CE
= 0.5V
V
CE
= 24V
V
CE
= 2V
I
C
= 2mA
T
a
= 25°C
t
r
t
f
t
d
t
s
I
F
= 20mA
I
C
= 1mA
I
F
= 30mA
Ambient temperature T
a
( °C )
Fig.12 Response Time vs. Load Resistance
Load resistance R
Voltage gain Av
(
dB
)
Frequency f ( kHz )
0
1
2
5
10
500
200
100
50
20
R
L
= 10k
1k
100
0.5
Collector-emitter saturation voltage V
CE
( sat
)
(
V
)
Forward current I
F
( mA )
0
0
1
2
3
4
5
2
6
10
14
18
1 m A
5 m A
6
20
16
12
8
4
PC866 Series
Test Circuit for Response Time
V
CC
90
%
10
%
Output
Input
R
L
Input
Output
R
D
V
CC
R
L
Output
R
D
Test Circuit for Frepuency Response
Fig.13 Frequency Response
- 20
- 10
t
t
r
t
s
t
d
Fig.14 Collector-emitter Saturation Voltage
v s . F o r w a r d C u r r e n t
f
7 m A
3 m A
V
CE
= 5V
I
C
= 2mA
T
a
= 25°C
I
C
= 0.5mA
T
a
= 25°C
Please refer to the chapter " Precautions for Use "
q
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