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Part Number SHD225409

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221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 871, REV. -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
-100 Volt, 0.21 Ohm, -13A MOSFET
Hermetic Metal Package
Fast Switching
Electrically Equivalent to IRFY9140 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C
= 25
C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
V
GS
-
-
20
Volts
ON-STATE DRAIN CURRENT @ T
C
= 25
C
I
D (on)
-
-
-13
Amps
PULSED DRAIN CURRENT @ T
C
= 25
C
I
DM
-
-
-52
Amps
OPERATING AND STORAGE TEMPERATURE
T
OP
/T
STG
-55
-
+150
C
THERMAL RESISTANCE, JUNCTION TO CASE
R
thJC
-
-
0.88
C/W
TOTAL DEVICE DISSIPATION @ T
C
= 25
C
P
D
-
-
140
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 1.0 mA
BV
DSS
-100
-
-
Volts
TOTAL GATE CHARGE
V
GS
= -10V, I
D
= -13A, V
DS
= 0.5 x V
DS
Max.
Q
g
31
-
60
nC
GATE TO SOURCE ON-STATE VOLTAGE
V
GS
= -10V, I
D
= -13A, V
DS
= 0.5 x V
DS
Max.
Q
gs
3.7
-
13
nC
GATE DRAIN CHARGE
V
GS
= -10V, I
D
= -13A, V
DS
= 0.5 x V
DS
Max.
Q
gd
7.0
-
35.2
nC
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V
GS
= 10V, I
D
= -8.4A
V
GS
= 10V, I
D
= -13A
R
DS(ON)
-
-
0.21
0.24
W
GATE THRESHOLD VOLTAGE V
DS
= V
GS
, I
D
= -250
mA
V
GS(th)
-2.0
-
-4.0
Volts
FORWARD TRANSCONDUCTANCE
V
DS
15V
DS(on)
, I
D
= -8.2A
g
fs
6.2
-
-
S(1/
W)
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8x Max. Rating, V
GS
= 0V
V
DS
= 0.8x Max. Rating, V
GS
= 0V, T
J
= 125
C
I
DSS
-
-
-25
-250
mA
GATE TO SOURCE LEAKAGE FORWARD V
GS
= 20V
GATE TO SOURCE LEAKAGE REVERSE V
GS
= -20V
I
GSS
-
-
100
-100
nA
TURN ON DELAY TIME V
DD
= -50V,
RISE TIME I
D
= -13A,
TURN OFF DELAY TIME R
G
= 9.1
W,
FALL TIME V
GS
= -10V
t
d(ON)
t
r
t
d(OFF)
t
f
-
-
35
85
85
65
nsec
DIODE FORWARD VOLTAGE T
C
= 25
C, I
S
= -13A,
V
GS
= 0V
V
SD
-
-
-4.2
Volts
REVERSE RECOVERY TIME T
J
= 25
C,
I
S
= -13 A, di/dt
-100A/msec,
V
DD
-50 V
t
rr
-
-
280
nsec
INPUT CAPACITANCE V
GS
= 0 V,
OUTPUT CAPACITANCE V
DS
= 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
C
iss
C
oss
C
rss
-
1400
600
200
-
pF
SHD225409
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221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
SENSITRON
DATA SHEET 871
REVISION -
MECHANICAL DIMENSIONS: in Inches / mm
PINOUT TABLE
DEVICE TYPE
PIN 1
PIN 2
PIN 3
MOSFET
TO-254 PACKAGE
DRAIN
SOURCE
GATE
SHD225409
TO-254
1 2 3
.260
.249
(6.60
6.32)
.050
.040
(1.27
1.02)
.150(3.81) BSC
.545
.535
(13.84
13.58)
.545
.535
(13.84
13.60)
.800
.790
(20.32
20.07)
.685
.665
(17.40
16.89)
1.235
1.195
(31.37
30.35)
.045
.035
(1.14
0.89)
3 Places
.150(3.81) BSC
2 Places
.149
.139
(3.78
3.53)
Dia.
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·
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
·
·
World Wide Web - http://www.sensitron.com
·
E-Mail Address - sales@sensitron.com
·
SENSITRON
SEMICONDUCTOR


TECHNICAL DATA

DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users' fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
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